2SB76 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB766A PNP SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION „ FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

2SB763

Abstract: 2SD858
Contextual Info: SavantIC Semiconductor Product Specification 2SB763 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SD858 ·Wide area of safe operation APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SB762A

Abstract: 857a 2SB762 2sd857
Contextual Info: SavantIC Semiconductor Product Specification 2SB762 2SB762A Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD857/857A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications

2SB767

Abstract: 2SD875 transistor marking CS
Contextual Info: Transistor 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD875 Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage

2SB761

Abstract: SWITCHING TRANSISTOR 60V 2SD856
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB761 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD856 APPLICATIONS ·Designed for AF power amplifier applications.

2SD855

Abstract: 2SB760
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB760 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD855 APPLICATIONS ·Medium power amplifier applications.

2SB762

Abstract: 2SD857
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB762 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD857 APPLICATIONS ·Designed for AF power amplifier applications.

2sb765

Abstract: Hitachi DSA001650
Contextual Info: 2SB765 K Silicon PNP Triple Diffused Application Medium speed and power switching complementary pair with 2SD864(K) Outpline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 4 kΩ (Typ) 300 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB766 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z Large collector power dissipation PC z Complementary to 2SD874 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD874A SOT-89-3L TRANSISTOR NPN 1. BASE FEATURES z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 0.4 max. 45˚ 3.0±0.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0767 (2SB767) Silicon PNP epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 M Di ain sc te on na tin nc

Contextual Info: Transistor 2SD0874, 2SD0874A 2SD874, 2SD874A Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) Unit: mm • Features Symbol Collector to 2SD0874 base voltage 2SD0874A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0766, 2SB0766A (2SB766, 2SB766A) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0874 (2SD874), 2SD0874A (2SD874A) 4.5±0.1

Contextual Info: Transistor 2SB0766, 2SB0766A 2SB766, 2SB766A Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD0874 (2SD874) and 2SD0874A (2SD874A) Unit: mm • Features (Ta=25˚C) 3 2 0.5±0.08 1 0.4±0.08 Collector to 2SB0766

D863

Contextual Info: Ordering number: EN 575D _ 2SB764/2SD863 No.575D PNP/ NPN Epitaxial Planar Silicon Transistors Voltage Regulator, Relay Lamp Driver Electrical Equipment Applications :2SB76*t Absolute Maxima Ratings at Ta:=25°C Collector to Base Voltage Collector to Emitter Voltage

TEB-1003

Abstract: 2SB768 2SD1033 MEI-1202 2sb768 nec MEI Semiconductors
Contextual Info: ! DATA SHEET N E C ^r SILICON TRANSISTOR 2SB768 PNP SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION PACKAGE DIMENSIONS 2SB768 is designed fo r Color TV Vertical Deflection Output, in millimeters especially in Hybrid Integrated Circuits. FEATURES •

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB766A PNP SILICON TRANSISTOR LOW FREQUENCY OUTPUT AMPLIFICATION  FEATURES * Large collector power dissipation Pc. * Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistor 2SD0875 2SD875 Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 * 1.5±0.1 2.5±0.1 0.4±0.04 3° (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistors 2SD0875 2SD875 Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.6±0.2 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO

2SB0767

Abstract: 2SB767 2SD0875 2SD875
Contextual Info: Transistor 2SB0767 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0875 (2SD875) Unit: mm • Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage

2SB0766

Abstract: 2SB0766A 2SB766 2SB766A 2SD0874 2SD0874A 2SD874 2SD874A
Contextual Info: Transistor 2SB0766, 2SB0766A 2SB766, 2SB766A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0874 (2SD874) and 2SD0874A (2SD874A) Unit: mm • Features Parameter Symbol Collector to 2SB0766 base voltage 2SB0766A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) Unit: mm 4.5±0.1 1.5±0.1 1.5±0.1 Parameter Symbol Rating

2SB764

Abstract: transistor 2Sb764
Contextual Info: 2SB764 2SB764 TO-92MOD TRANSISTOR PNP FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -1 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃