1N38 Search Results

diode 40 S02

Contextual Info: 1N3879 R , 1N3889(R), 6/12/16FL(R) Series Vishay High Power Products Fast Recovery Diodes (Stud Version), 6/12/16 A FEATURES • Short reverse recovery time RoHS • Low stored charge COMPLIANT • Wide current range • Excellent surge capabilities • Standard JEDEC types

Contextual Info: DIGITRON SEMICONDUCTORS 1N3879-1N3883 FAST RECOVERY RECTIIFER MAXIMUM RATINGS Symbol 1N3879 1N3880 1N3881 1N3882 1N3883 Working peak reverse voltage Parameters VRWM 50V 100V 200V 300V 400V Peak repetitive reverse voltage VRRM 50V 100V 200V 300V 400V Operating temperature range

Contextual Info: N AMER P H ILIP S /D IS C R E TE □LE D • b b 5 3 T 3 1 0 0 1 1 7 1 5 fl ■ 1N3889 to 1N3893 J ^T-03-l 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications.

1N3889

Abstract: 1N3890 1N3891 1N3892 1N3893 1N388
Contextual Info: Fast Recovery Rectifier 1N3889 - 1N3893 Dim. Inches M illimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 -3 2 UNF3A threads 2. Full threads within 2 1 /2 threads 3. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode Microsemi Catalog Number

Contextual Info: 1N3890/R asi SILICON POWER RECTIFIER- SWITCHING DESCRIPTION: The 1N3890/R is Designed for General Purpose Fast Switching Power Supply Applications. • 1N3890 = Cathode to Stud • 1N3890R = Anode to Stud MAXIMUM RATINGS 12 A @ T C= 100 °C lo 200 A Ifsm V rw M

100 watt zener diode

Abstract: 1N3823 case DO41 Double Zener diode C 12 PH* Zener 500 162 600 1N3821 1N3821A-1 1N3822 1N3822A
Contextual Info: • 1N3821A-1 THRU 1N3828A-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/115 • 1 WATT ZENER DIODE 1N3821A thru 1N3828A and 1N3821A-1 thru 1N3828A-1 • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

MCC 550

Contextual Info: MCC TM Micro Commercial Components 1N3821A THRU 1N3828A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features 1.0 Watt Zener Diode 3.3 to 6.2 Volts Double Plug Construction Metallurgically Bound

1N3827

Contextual Info: MCC TM Micro Commercial Components 1N3821A THRU 1N3828A
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Double Plug Construction Metallurgically Bound x Case Material: Molded Plastic. UL Flammability

diode 1n4017

Abstract: 1N4017 1N3819 1N4018 in3997 1N4022 1N4027 1N3985 IN3996 1n4000 DIODE
Contextual Info: Zener Type No. 1N 3815 1 N 3816 1N3817 1N3818 1N3819 1N3820 1N3821 1N3822 1N3823 "IN 3824“ " 1N3825 1N3826 1N3827 1N3828 1N3829 1N3830 Type No 1N3879 1N3880 1N3881 1N3882 1N3883 I N 3889 1N3890 1N3891 1N3892 1N3893 Zener Type No. Zener Voltage at ZT Volts

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

1N SERIES DIODE

Abstract: Zener Diode LT 432 MOTOROLA ZM 1N zener diode 1n 3016 b
Contextual Info: MOTOROLA SC Tb -CDIODES/OPTOÏ ¿7 DE 1 1 3 b 75S S □□7flDlb ö | 1N3821thru 1N3830 MOTOROLA S E R IE S SEM ICO N DU CTO R 1N3016 thru 1N3051 TECHNICAL DATA S E R IE S .^ D c ' s ig n c ii^ iW r t t a S h e o i 1.0 W A T T 1.0 WATT M ETA L SILICON ZEN ER DIODES

Contextual Info: 1N3888 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)12

Contextual Info: 1N3836 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)41 V(BO) Max. (V)49 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)27 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m

Contextual Info: 1N3852 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 5.0m Peak Curr. Tol.25m Total Cap. (F)15p Ip/Iv Min8.0 Vp70m Vv330m Fwd Volt @Ipeak525m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)3.0 Neg Resist. Semiconductor MaterialGermanium

Contextual Info: 1N3847 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 5.0m Peak Curr. Tol.50m Total Cap. (F)25p Ip/Iv Min6.0 Vp Vv Fwd Volt @Ipeak510m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)3.0 Neg Resist. Semiconductor MaterialGermanium

Contextual Info: 1N3885+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current12 V(RRM)(V) Rep.Pk.Rev. Voltage100 t(rr) Max.(s) Rev.Rec. Time200n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.4

Contextual Info: 1N3896 Diodes Forward Reference Diode If Max A I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage814m @I(FM) (A) (Test Condition)50m I(RM) Max.(A) Reverse Current10u @V(R) (V)(Test Condition)10 Semiconductor MaterialSilicon Package StyleDO-35 Description

Contextual Info: 1N3849 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 20m Peak Curr. Tol.2.0m Total Cap. (F)30p Ip/Iv Min6.0 Vp Vv Fwd Volt @Ipeak540m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.0 Neg Resist. Semiconductor MaterialGermanium

msc stud diode

Abstract: DO-4 Package 1N3883 1N3881
Contextual Info: 1N3879 R – 1N3883(R) Available on commercial versions FAST RECOVERY RECTIFIERS DESCRIPTION This 1N3879 – 1N3883 rectifier device is suitable for applications in DC power supplies, inverters, converters, choppers and ultrasonic systems as well as other applications. It can

Contextual Info: ^EmL-donductoi ZPioaucti, Dnc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N38B GOLD BONDED GERMANIUM DIODE FEATURES Low forward voltage drop—low power consumption Thirty years of proven reliability—one million hours mean time between failures (MTBF)

Contextual Info: 1N3891/R asi SILICON POWER RECTIFIER- SWITCHING DESCRIPTION: The 1N3891/R is Designed for General Purpose Fast Switching Power Supply Applications. • 1N3891 = Cathode to Stud • 1N3891R = Anode to Stud MAXIMUM RATINGS 12 A @ T C= 100 °C lo 200 A Ifsm ONE CYCLE

1N5331

Contextual Info: 7294621 PQWEREX I NC ?4 D E ^V S 'm S l DDDltHS & n | 5.2 Condensed Electrical and Thermal Characteristics and Ratings \ RECTIFIERS 6 TO 12 AM PERES IN1341AIN134B 1N3987-90 1N3879-83 JED ECTY PE SPECIFICATIONS Max. average forward 1 phase operation T c = (°C)

zener diode 182

Abstract: Zener IT 243 diode zener 182 10 watts zener diode diode zener marking 58 IT 243 marking 1n3 1N3821 1N3821UR-1 1N3830
Contextual Info: 1N3821UR-1 thru 1N3830AUR-1 or MLL3821 thru MLL3830A SCOTTSDALE DIVISION LEADLESS GLASS ZENER DIODES APPEARANCE This surface mountable zener diode series is similar to the lower voltage 1N3821 thru 1N3830 JEDEC registration except it is in a surface mount