A15B Search Results

A15F

Abstract: A15B-M 250101 A15A A15U
Contextual Info: Passivated A15 SER IES Rectifier 5.0 Amps A 15 A A 15 F 50-100 Volts A15U A15B-M SEE PAGE 294 THE GENERAL ELECTRIC A15 IS A 5.0 AMPERE RATED, AXIAL-LEADED GENERAL PURPOSE RECTIFIER. ITS DUAL HEATSINK CONSTRUCTION PROVIDES RIGID MECHANICAL SUPPORT FOR THE PELLET AND EXCEL­

Contextual Info: 1 1 1 1 1 1 1 2345627891 1 1 1 1 A15BCBD1EF161DBB1DD11B1 23E8 6112345319 9 9 F975979 9 11111114B9 294 E29431

9114 static ram

Abstract: dallas ds1280 a17b 68-PIN DS1280 DS1280Q-68 TD1220
Contextual Info: » A L L A S SEMICONDUCTOR CORP 31E D B HblMlBO 0003*133 0 ES DAL O S 1280 • W toàia^ M M éa^ M ni iii ii ì r -iiiJL.V^-r ¿ « .,- Mt. -«h. . '.riti , , tM . \* ^ * 5 0~7 E i£ a « a 081280 DALLAS 3-Wire to Bytewide Converter Chip semiconductor

a13b 5 pin

Abstract: A13B AMB0480 diode A14A IDTAMB0480 DDR2-533 DDR2-667 ADVANCED COMMUNICATION DEVICES A12A a12b 5 pin
Contextual Info: IDTAMB0480 ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM COMMERCIAL TEMPERATURE RANGE ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES IDTAMB0480 PRODUCT BRIEF FEATURES: DESCRIPTION: • • • • • The fully buffered dual in-line memory module FB-DIMM is the next

Contextual Info: xr PRELIMINARY XRT79L71 1-CHANNEL DS3/E3 ATM UNI/PPP/CLEAR-CHANNEL FRAMER IC - CC/HDLC ARCHITECTURAL DESCRIPTION NOVEMBER 2005 GENERAL DESCRIPTION The XRT79L71 is a single channel, ATM UNI/PPP Physical Layer Processor with integrated DS3/E3 framing controller and Line Interface Unit with Jitter

Contextual Info: S i GEC PLESSEY ADVANCE INFORMATION S I M I O (S I l t T O K s SP5026 1.0 GHz 3-WIRE BUS CONTROLLED SYNTHESISER (Supersedes Septem ber 1992 edition) The SP5026 is a programming variant of the SP5S10, allowing the design of one tuner with either l2C bus or 3-wire

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

CMOS 4091

Abstract: diode a15a A15B A15A IDT71V016 EA15A
Contextual Info: PRELIMINARY IDT7MMV4103 64K x 16 x 2 TWO MEGABIT 3.3V CMOS STATIC RAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 2 megabit 3.3V static RAM • Low profile 74 lead, 15mm x 15mm BGA Ball Grid Array • Fast RAM access times: 10, 12,15ns

A114F

Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
Contextual Info: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —

Contextual Info: SG647FBD64852-IAI June 27, 2006 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG647FBD64852-IAI 64Mx72 512MB , DDR2, 240-pin Fully Buffered DIMM, ECC, 64Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant). Label:

1N5179

Abstract: 1N5624 1N5625 1N5626 1N5627 A15B A15D A15M A15N
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 ! j 600 § 500 s 400 5 300 z § H O > 200 _l fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK A V ER A G E C U R R E N T -A M P E R E S S T A N D A R D RECTIFIERS SELECTOR GUIDE

powerex nd

Contextual Info: 7 2 9 4 6 2 1 POWEREX INC 74 d F | 7 5 T 4 L ,2 1 0001333 T "|~ Ittri MnnntoH Rectifier TRANSIENT VOLTAGE PROTECTED 5.0 Amps 200-800 Volts THE G E N ER A L ELECTRIC A15 IS A 5.0 A M PERE RATED, A X IA L LEADED G E N ER A L PURPOSE RECTIFIER. ITS DUAL H EA T SIN K CONSTRUCTION

80C33

Abstract: 16V8 80C154 80C32 PLCC32
Contextual Info: microMODUL-2 Hardware-Manual Edition: December 1996 A product of a PHYTEC Technology Holding company microMODUL-2 In this manual are descriptions for copyrighted products which are not explicitly indicated as such. The absence of the trademark  symbol does not infer that a

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: SG1027FB225652-QC2 August 5, 2008 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG1027FB225652-QC2 1Gx72 8GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 512Mx4 Based (DDP - two 256Mx4), PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant).

Contextual Info: SG1287FBD64852-SCI November 30, 2006 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG1287FBD64852-SCI 128Mx72 1GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 64Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant).

Contextual Info: SG647FBD64852UUD5 April 24, 2006 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG647FBD64852IAD5 64Mx72 512MB , DDR2, 240-pin Fully Buffered DIMM, ECC, 64Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant). Label:

Contextual Info: SG5SF44E2G1CDDJUU Preliminary Ordering Information Part Numbers Description AMB Vendor Device Vendor SG5SF44E2G1CDDJME 1Gx72 8GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 512Mx4 Based (DDP - two 256Mx4), PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant).

Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb E-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

a13b5

Abstract: A10B11 A15B0 A7B0 A13B4 a5b2
Contextual Info: Mercury Programmable Logic Device Family December 2002, ver. 2.1 Features… Data Sheet • ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350 120,000 350,000 8 18

HYMP151F72CP8

Abstract: HYMP151F72CP4
Contextual Info: 240pin Fully Buffered DDR2 SDRAM DIMMs based on 1Gb C-ver. This Hynix’s Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrow host interface. Hynix’s FB-DIMM features novel architecture including the Advanced Memory Buffer that

A15A

Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
Contextual Info: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x

Contextual Info: WDC THE WESTERN DESIGN CENTER, INC. W65C816S INTRODUCTION The WDC W65C816S is a fully static CMOS 16-bit microprocessor featuring software compatibility* with the 8-bit NMOS and CMOS 6500-series predecessors. The W65C816S extends addressing to a full 16 megabytes. These devices

Contextual Info: WDC THE WESTERN DESIGN CENTER, INC. W65C02S INTRODUCTION The W65C02S Microprocessor offers complete hardware and software capability with existing 6500 series products as well as significant enhancements. The W65C02S 40-pin Dip plug compatible with the NMOS