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    1N5627 Search Results

    1N5627 Datasheets (37)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    1N5627
    EIC Semiconductor Glass Passivated Rectifier Diodes Original PDF 79.31KB 2
    1N5627
    General Semiconductor DIODE STANDARD RECOVERY RECTIFIER 800V 3A 2DO-201AD Original PDF 28.72KB 2
    1N5627
    General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original PDF 52.23KB 2
    1N5627
    Taitron Components Rectifier Diode, Single, 800V, SOD-64, 2-Pin Original PDF 19.35KB 1
    1N5627
    Vishay Telefunken Silicon Mesa Rectifiers Original PDF 50.82KB 4
    1N5627
    Central Semiconductor Glass Passivated Rectifier 5.0 Amps, 200-800 Volts, GPR-3A Case Scan PDF 68.31KB 1
    1N5627
    General Electric Semiconductor Data Book 1971 Scan PDF 169.68KB 1
    1N5627
    General Electric Semiconductor Data Handbook 1977 Scan PDF 373.19KB 6
    1N5627
    General Instrument Short Form Data 1976 Short Form PDF 50.54KB 1
    1N5627
    Harris Semiconductor 3 Amp, 200V - 800V Diodes Scan PDF 90.74KB 3
    1N5627
    International Semiconductor RECTIFIER DIODE Scan PDF 118.05KB 1
    1N5627
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 37.56KB 1
    1N5627
    Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF 99.44KB 1
    1N5627
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.6KB 1
    1N5627
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 63.07KB 1
    1N5627
    Unknown The Diode Data Book with Package Outlines 1993 Scan PDF 83.86KB 2
    1N5627
    Powerex Lead Mounted Rectifier Scan PDF 164.01KB 4
    1N5627
    Solid State 800 V, 3 A standard recovery rectifier Scan PDF 74.81KB 2
    1N5627
    Sun Wai Electronic Company Silicon Rectifiers Scan PDF 67.63KB 1
    1N5627
    Telefunken Electronic Sinterglass Rectifiers Scan PDF 55.33KB 1
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    1N5627 Price and Stock

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    Vishay Semiconductors 1N5627-TR

    DIODE AVALANCHE 800V 3A SOD64
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () 1N5627-TR Tape & Reel 20,826 2,500
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    1N5627-TR Cut Tape 3,326 1
    • 1 $3.69
    • 10 $2.40
    • 100 $1.67
    • 1000 $1.36
    • 10000 $1.36
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    Vishay Semiconductors 1N5627-TAP

    DIODE AVALANCHE 800V 3A SOD64
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    DigiKey () 1N5627-TAP Cut Tape 12,500 1
    • 1 $3.68
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    • 1000 $1.36
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    1N5627-TAP Ammo Pack 12,500 2,500
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    Vishay Semiconductors 1N5627GP-E3/54

    DIODE STANDARD 800V 3A DO201AD
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    DigiKey 1N5627GP-E3/54 Tape & Reel
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    Vishay Semiconductors 1N5627GPHE3/54

    DIODE STANDARD 800V 3A DO201AD
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    Vishay Intertechnologies 1N5627-TR

    Diode Switching 800V 3A 2-Pin SOD-64 T/R
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    Arrow Electronics () 1N5627-TR Cut Strips 9,737 13 Weeks 1
    • 1 $1.17
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    • 100 $1.11
    • 1000 $1.06
    • 10000 $1.03
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    1N5627-TR Cut Strips 3,251 5
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    • 100 $1.18
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    • 10000 $1.02
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    Mouser Electronics 1N5627-TR 7,829
    • 1 $3.69
    • 10 $2.25
    • 100 $1.62
    • 1000 $1.30
    • 10000 $1.25
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    Newark 1N5627-TR Cut Tape 12,500
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    Verical () 1N5627-TR 9,737 6
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    • 100 $1.11
    • 1000 $1.06
    • 10000 $1.03
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    1N5627-TR 3,251 5
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    TTI 1N5627-TR Reel 12,500
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    TME 1N5627-TR 2,500
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    EBV Elektronik 1N5627-TR 14 Weeks 2,500
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    1N5627 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 57E D • rA Ü U H 345=1325 GD00L.75 bT2 « F Ü R S ~ m 1N5624GP.1N5627GP FAGOR ELECTRONICS 3 Amp Glass Passivated Junction Rectiier f V -■ •«• Dimensions in mm. - DO-27 A DO-201 AD Plastic -i— . -i V - •* V- Voltage 200 to 800 V.


    OCR Scan
    GD00L 1N5624GP. 1N5627GP DO-27 DO-201 DO-201AD DO-27A DO-201AE PDF

    1N5625

    Abstract: 1n5627
    Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of


    Original
    1N5624 1N5627 MIL-S-19500 25any 18-Jul-08 1N5625 1n5627 PDF

    Contextual Info: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability


    Original
    1N5624GP 1N5627GP MIL-S-19500 22-B106 DO-201AD AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    Contextual Info: 1N5627+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125¥ V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)


    Original
    1N5627 Voltage800 Voltage950m Current200u StyleDO-41 PDF

    1N5624GP

    Abstract: 1N5627GP JESD22-B102D J-STD-002B 1n5626gp
    Contextual Info: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation


    Original
    1N5624GP 1N5627GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N5627GP JESD22-B102D J-STD-002B 1n5626gp PDF

    1N5624

    Abstract: 1N5625 1N5626 1N5627
    Contextual Info: 1N5624 thru 1N5627 Glass Passivated Junction Rectifier * d e t n Features e t a P Case Style G3 • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Capable of meeting environmental standards of


    Original
    1N5624 1N5627 MIL-S-19500 50mVp-p 1N5625 1N5626 1N5627 PDF

    DIODE 1N5625 V

    Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626
    Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original
    1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 DIODE 1N5625 V vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 Specifications 1N5626 PDF

    1N5625

    Abstract: 1N5624
    Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of


    Original
    1N5624 1N5627 MIL-S-19500 08-Apr-05 1N5625 PDF

    Contextual Info: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current e2 949588 • High surge current loading • Lead Pb -free component


    Original
    1N5624 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5625 1N5626 1N5627 PDF

    1N5625

    Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
    Contextual Info: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original
    1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 1N5625 diode diode 1n5624 vishay 1N5625 1N5626 PDF

    Contextual Info: 1N5627+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125¥ V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)


    Original
    1N5627 Voltage800 Voltage950m Current200u StyleDO-41 PDF

    1N5624

    Abstract: 1N5625 1N5626 1N5627
    Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4)


    Original
    1N5624 1N5627 MIL-S-19500 inches10 50mVp-p 1N5625 1N5626 1N5627 PDF

    1N5624GP

    Abstract: 1N5625GP 1N5626GP 1N5627GP
    Contextual Info: 1N5624GP THRU 1N5627GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES D * DO-201AD N T E ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction


    Original
    1N5624GP 1N5627GP DO-201AD MIL-S-19500 50mVp-p 1N5625GP 1N5626GP 1N5627GP PDF

    diode 1n5624

    Abstract: vishay 1N5625 9563 1N5624 1N5625 1N5626 1N5627
    Contextual Info: 1N5624.1N5627 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications 94 9588 Rectifier, general purpose


    Original
    1N5624. 1N5627 1N5624 1N5625 1N5626 D-74025 27-Sep-00 diode 1n5624 vishay 1N5625 9563 1N5624 1N5625 1N5626 1N5627 PDF

    1N5624GP

    Abstract: 1N5625GP 1N5626GP 1N5627GP
    Contextual Info: 1N5624GP THRU 1N5627GP Glass Passivated Junction Rectifier * d e t n Features e t a P DO-201AD • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • Cavity-free glass passivated junction


    Original
    1N5624GP 1N5627GP DO-201AD MIL-S-19500 50mVp-p 1N5625GP 1N5626GP 1N5627GP PDF

    diode 1n5624

    Abstract: 1n5624 1N5625 diode
    Contextual Info: 1N5624 to 1N5627 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications


    Original
    1N5624 1N5627 MILSTD-750, 1N5625 1N5626 1N5627 D-74025 09-Oct-00 diode 1n5624 1N5625 diode PDF

    Contextual Info: 1N5627 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N5627 Availability Online Store


    Original
    1N5627 1N5627 STV3208 LM3909N PDF

    1N5624GP

    Abstract: 1N5624 1N5625 1N5626 1N5627 1N5627GP
    Contextual Info: 1N5624GP thru 1N5627GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Rev. Voltage 200 to 800V Forward Current 3.0A * d e t n e t a Features P DO-201AD • Plastic package has Underwriters Laboratories Flammability Classification 94V-0


    Original
    1N5624GP 1N5627GP DO-201AD MIL-S-19500 50mVp-p 11-Feb-02 1N5624 1N5625 1N5626 1N5627 1N5627GP PDF

    1N562S

    Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER C u rre n t - 3.0 Amperes Voltage - 200 to 800 Volts FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ Hermetically sealed package


    OCR Scan
    1N5624 1N5627 MIL-S-19500 MIL-STD-750, 1N562S PDF

    Contextual Info: 1N5624GP THRU 1N5627GP GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER V oltage - 200 to 800 Volts C u rre n t - 3.0 Amperes FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Lab^ oratory Flammability Classification 94V-0


    OCR Scan
    1N5624GP 1N5627GP D0-201 MIL-S-19500 PDF

    1N5624GP

    Contextual Info: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 200 V to 800 V IFSM 125 A IR 5.0 µA VF 0.95 V Tj max. 175 °C d* e t n Pate DO-201AD * Glass-plastic encapsulation


    Original
    1N5624GP 1N5627GP DO-201AD MIL-S-19500 DO-201AD, UL-94V-0 08-Apr-05 PDF

    Contextual Info: 1N5624GP . 1N5627GP 3.0 Amp. Glass Passivated Junction Rectifier Current 3.0 A at 70º C Voltage 200V to 800 V DO-201AD DO-27 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction


    Original
    1N5624GP 1N5627GP DO-201AD DO-27) 2011/65/EU 2002/96/EC MIL-STD-750 J-STD-002 PDF

    Contextual Info: 1N5624 I n ter n a tio n a l S e m ic o n d u c to r , I n c . thru G LA S S P A S SIV A TE D , G LA S S P ACKA G E S IL IC O N R E C T IF IE R VOLTAGE - 200 TO 800 Volts 1N5627 CURRENT - 3.0 Ampere FEATURES MECHANICAL DATA • G lass Passivated cavity-free ju nctio n


    OCR Scan
    1N5624 1N5627 TQDD37Ã PDF

    1n5625g

    Abstract: 1N5626G
    Contextual Info: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current


    Original
    1N5624GP 1N5627GP MIL-S-19500 DO-201AD 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 1n5625g 1N5626G PDF