9563 Search Results

IRL530N

Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V

dynapro

Abstract: BERG CONNECTOR 65801 TOUCH GLASS SCREEN PSO14 RTS10
Contextual Info: 0.675±0.03 17.1±0.8 2X Backer 10 .4" Resistive Touch Screen 95633 0.675±0.03 (17.1±0.8) 2X Backer 9.217±0.015(234.1±0.4) Backer 9.16(232.6) PET circuit 0.03(0.8) 8.374(212.7) Viewing area (spacer opening) 0.21(5.3) 8.314(211.2) Active area 0.24(6.0)

diode IR 132 E

Abstract: DIODE NU
Contextual Info: PD - 95630 IRFBE20PbF • Lead-Free www.irf.com 1 8/4/04 IRFBE20PbF 2 www.irf.com IRFBE20PbF www.irf.com 3 IRFBE20PbF 4 www.irf.com IRFBE20PbF www.irf.com 5 IRFBE20PbF 6 www.irf.com IRFBE20PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations

Contextual Info: PD - 95631 IRFBF30PbF • Lead-Free Document Number: 91122 8/4/04 www.vishay.com 1 IRFBF30PbF Document Number: 91122 www.vishay.com 2 IRFBF30PbF Document Number: 91122 www.vishay.com 3 IRFBF30PbF Document Number: 91122 www.vishay.com 4 IRFBF30PbF Document Number: 91122

29LV008

Abstract: 29F016 0004H 28F008SC 28F016SV "2D ID", intel sharp memory code CFI
Contextual Info: Common Flash Memory Interface Publication 100 Vendor & Device ID Code Assignments Publication Date: July 25, 1996 Volume Number 96.1 Intel Corporation 1900 Prairie City Rd, Folsom CA 95630-9598 Common Flash Memory Interface CFI PUBLICATION 100 Publication Date: July 25, 1996

vs-30wq04fn-m3

Contextual Info: 95630VS-30WQ04FN-M3 * * Copyright: * * Vishay Intertechnology, Inc. * * * * Model Diode * * MODEL part0 D + N=.47088

Contextual Info: PD - 95633A IRF7420PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS RDS on max ID -12V 14mΩ@VGS = -4.5V -11.5A 17.5mΩ@VGS = -2.5V 26mΩ@VGS = -1.8V -9.8A -8.1A Description

DFAR252

Abstract: Common Flash memory interface Specification
Contextual Info: Common Flash Memory Interface Specification Release 1.1 May 30, 1997 Intel Corporation 1900 Prairie City Rd, Folsom CA 95630-9598 CFI SPECIFICATION AGREEMENT This is a royalty-free, reciprocal patent license for parties wishing to adopt the CFI Specification in their products.

IRGBC20K

Abstract: IRGBC20M
Contextual Info: PD - 95638 IRG4BC20KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

a56 transistor

Abstract: DD28F032SA E28F008SA n28f512 Needhams Electronics that your PROM programming hardware and software Needhams Electronics
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Needhams Electronics 4630 Beloit Drive #20 Sacramento, CA 95838 REF: Intel and Needhams Electronics Test Services Agreement dated 10/30/95 Dear PROM Programmer Vendor:

BERG 65801-004

Abstract: BERG CONNECTOR dynapro 65801-004 hcg12 PSO14 Dynapro 95636
Contextual Info: 5.6" Resistive Touch Screen 95636 5.457±.015 138.6±0.4 Backer 5.40(137.1) PET circuit 0.03(0.8) 0.27(6.8) 0.03(0.8) 4.764(121.0) Viewing area (spacer opening) 0.52(13.2) 4.534(115.2) Active area 0.64(16.3) 0.16(4.2) Spacer adhesive Optical adhesive A 4.331±0.015

SPE-1701-25

Contextual Info: PREMIER DEVICES P R O D U C T SPE-1701-25 SURFACE MOUNT SPLITTER F E A T U R E S Contact Info: Premier Devices, Inc 120 Blue Ravine Rd. Folsom, CA 95630 1420 to 1660 MHz High Isolation Low Insertion Loss 0° Phase Offset www.premierdevices.com Low Profile Package

TSOP56

Abstract: 302A F28F020 TSOP-56 DD28F032SA E28F008SA DIP48 psop44 intel E28F008BE
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 October 7, 1997 Intel Corporation 1900 Prairie City Rd. Folsom, CA 95630 Dear Programmer Vendor: I am pleased to inform Intel Corp. that your device programming hardware and software has passed programmer

Contextual Info: PD - 95630 IRFBE20PbF • Lead-Free Document Number: 91117 8/4/04 www.vishay.com 1 IRFBE20PbF Document Number: 91117 www.vishay.com 2 IRFBE20PbF Document Number: 91117 www.vishay.com 3 IRFBE20PbF Document Number: 91117 www.vishay.com 4 IRFBE20PbF Document Number: 91117

Contextual Info: PD - 95635 IRLI530NPbF Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 100V

tekelec eagle

Abstract: ericsson 6102 NL-5664 5377 svs 357
Contextual Info: Sales Contacts Division Headquarters Power-One AG Compact Power Systems Division Ackerstrasse 56 CH-8610 Uster Tel. 0041 1 944 81 11 Fax 0041 1 940 98 58 www.power-one.ch Australia Scientific Devices PTY Ltd. Oakleigh Tel. 0061 3 9569 1366 Fax 0061 3 9563 4728

39BASE-0101

Abstract: 39BASE-0201 l 0701 testing of diode DD28F032SA E28F008SA 39BASE-9901
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Data I/O Corp. 10525 Willows Rd. NE Redmond, WA 98073 REF: Intel and Data I/O Corp. Test Services Agreement dated 08/15/95 Dear PROM Programmer Vendor: I am pleased to inform Data I/O Corp. that your PROM programming hardware and software has passed

E28F016SV-70

Abstract: E28F016SV70 E28F016SA70 44PS A6 t E28F016SA-70 N28F010-120 P629 transistor A6 datasheet transistor a6 s
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 SMS Mikrocomputer Systeme GmbH Im Grund 15 D-88239 Wangen, Germany REF: Intel and SMS Mikrocomputer Systeme GmbH Test Services Agreement dated 05/08/96 Dear PROM Programmer Vendor:

Contextual Info: PD -95636A IRG4IBC20WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage † • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD - 95639 IRG4BC20SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

mosfet p-channel 300v irf

Abstract: EIA-541
Contextual Info: PD-95634 IRF7663PbF HEXFET Power MOSFET Trench Technology l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Lead-Free l Description A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -20V RDS(on) = 0.020Ω

HS-1840

Abstract: HS-1840ARH 5962F9563002QYC smd transistor F5 f5 smd transistor hs1840 5962F9563002VYC MKT 1840 5962F9563002QXC 5962F9563002V9A
Contextual Info: HS-1840ARH Data Sheet August 1999 Rad-Hard 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection File Number 4355.1 Features • Electrically Screened to SMD # 5962-95630 The HS-1840ARH is a radiation hardened, monolithic 16 channel multiplexer constructed with the Intersil Rad-Hard

report on PLCC

Abstract: TSOP 56 socket Intel 56 TSOP TSOP 44 socket TSOP 56 psop 44 TSOP 48 socket DD28F032SA E28F008SA Intel 48 TSOP
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Intel Corp. 1900 Prairie City Rd. Folsom, CA 95630 Dear PROM Programmer Vendor: I am pleased to inform Intel Corp. that your PROM programming hardware and software has passed PROM

dc power connector

Abstract: "DC Power Connector" male connector pin 0648 PDC-212-45-15 HPA C band
Contextual Info: 120 Blue Ravine Rd, #2 Folsom, CA 95630 Ph: 916.608.0648 Fax: 916.608.0689 www.premierdevices.com sales@premierdevices.com MODEL PDC-212-45-15 POWER AMPLIFIER 15 WATTS WCDMA Parameter Frequency Range Specifications 2110-2170 MHz, PART NUMBER: PDC-212-45-15