IRGBC20M Search Results

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

Contextual Info: P D - 9.1106 International H^lRectffier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -1 Ops @125°C, VGE = 15V • Switching-loss rating includes all "tail” losses

IRGBC20MD2

Abstract: transistor c354
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1106 IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

GC 301

Abstract: lta 301 D-12 IRGBC20M
Contextual Info: PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

c372 transistor

Abstract: transistor C369 transistor C372
Contextual Info: International lü Rectifier PD -9.1141 IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ps @125°C, VGE= 15V Switching-loss rating includes all "tail" losses

TRANSISTOR C306

Abstract: transistor c308 G304
Contextual Info: P D - 9.1127 htemational Ë»! Rectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

transistor C372

Abstract: c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369
Contextual Info: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

c337 transistor

Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
Contextual Info: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

lta 301

Abstract: D-12 IRGBC20M c306 TRANSISTOR
Contextual Info: PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

transistor c372

Abstract: c372 transistor transistor C369 transistor C368 transistor c367 c368 transistor AN-994 IRGBC20MD2-S SMD-220 C369 transistor
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

c338 transistor

Abstract: transistor c338 Transistor c340 smd ic LM 338 TRANSISTOR SMD QE CX336
Contextual Info: P D -9.1131A htemational ior]Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

transistor C372

Abstract: c372 transistor transistor c367 transistor C368 c371 transistor C372 O smd transistor 18E c366 transistor smd qe g10 smd transistor
Contextual Info: P D - 9.1141 htemational iörIRectifier IRGBC20MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated - 1 0 m s @ 125°C, VGe = 15V Switching-ioss rating includes all "tail" losses

c337 transistor

Abstract: C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

ge c350

Abstract: C355 transistor IRGBC20MD2 C349 transistor c350 diode C352 mv c349 C351 FA
Contextual Info: PD - 9.1106 IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: P D - 9.1106 htemational ^Rectifier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE _ Features V ces = 600V • Short circuit rated -10ps @125°C, VGE= 15V >Switching-loss rating includes ail “tail" losses

lta 301

Abstract: data sheet for bipolar junction diod D-12 IRGBC20M c306 TRANSISTOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

IRG4BC20

Abstract: IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001
Contextual Info: PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

IRGBC20K-S

Abstract: IRGBC20M-S AN-994 IRG4BC20K-S
Contextual Info: PD - 91620A IRG4BC20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

AN-994

Abstract: IRGBC20KD2-S IRGBC20MD2-S
Contextual Info: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications