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    IRGBC20U Price and Stock

    Infineon Technologies AG IRGBC20U

    IGBT UFAST 600V 13A TO-220AB
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    DigiKey IRGBC20U Tube 50
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    Infineon Technologies AG IRGBC20UD2

    IGBT W/DIODE 600V 13A TO-220AB
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    International Rectifier IRGBC20U

    IN STOCK SHIP TODAY
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    Component Electronics, Inc IRGBC20U 4
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    IRGBC20U Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRGBC20U International Rectifier UltraFast IGBT Original PDF
    IRGBC20U International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC20U International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRGBC20U Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRGBC20UD2 International Rectifier UltraFast CoPack IGBT Original PDF
    IRGBC20UD2 International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRGBC20UD2 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRGBC20U Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
    Text: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U


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    IRGB420U IRGP420U IRGB430U IRGP430U IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGKI200F06 IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06 PDF

    transistor c655

    Abstract: D-12 IRGBC20U
    Text: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


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    IRGBC20U O-220AB C-656 transistor c655 D-12 IRGBC20U PDF

    transistor IR 652 H GC

    Abstract: D-12 IRGBC20U C655 LAmp igbt 600V
    Text: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


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    IRGBC20U O-220AB C-656 transistor IR 652 H GC D-12 IRGBC20U C655 LAmp igbt 600V PDF

    transistor c693

    Abstract: transistor C698 IRGBC20UD2
    Text: Previous Datasheet Index Next Data Sheet PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes


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    IRGBC20UD2 O-220AB C-700 transistor c693 transistor C698 IRGBC20UD2 PDF

    D-12

    Abstract: IRGBC20U C655 LAmp
    Text: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V


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    IRGBC20U O-220AB C-656 D-12 IRGBC20U C655 LAmp PDF

    IRGBC20UD2

    Abstract: transistor C698 transistor c693 C-696 c698 transistor
    Text: PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


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    IRGBC20UD2 O-220AB C-700 IRGBC20UD2 transistor C698 transistor c693 C-696 c698 transistor PDF

    transistor c693

    Abstract: c698 transistor transistor C698 c693 transistor IRGBC20UD2 C698 C696 C693 IRGBC20UD
    Text: PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


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    IRGBC20UD2 O-220AB C-700 transistor c693 c698 transistor transistor C698 c693 transistor IRGBC20UD2 C698 C696 C693 IRGBC20UD PDF

    D-12

    Abstract: IRGBC20U
    Text: Previous Datasheet Index Next Data Sheet PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBC20U O-220AB C-656 D-12 IRGBC20U PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    TRANSISTOR 9642

    Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    T0247 T0220 IRG4BC20F IRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U TRANSISTOR 9642 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U PDF

    3 phase inverter 120 conduction mode waveform

    Abstract: 3 phase inverter 180 conduction mode waveform 1 HP SINGLE PHASE induction motor speed control using pwm inverter LM2907J inverter 12v to 220 ac mosfet based 120 degree conduction mode of an inverter 220VAC single phase AC inverter ML4423 single phase 180 degrees ac phase inverter sensor 21E 22B
    Text: April 1998 Application Note 42037 ML4423 Application Guidelines INTRODUCTION Depending on the application, the focus of a given motor control design can fall on one of many specific parameters. Different applications may require that special attention be given to a specific control method to


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    ML4423 3 phase inverter 120 conduction mode waveform 3 phase inverter 180 conduction mode waveform 1 HP SINGLE PHASE induction motor speed control using pwm inverter LM2907J inverter 12v to 220 ac mosfet based 120 degree conduction mode of an inverter 220VAC single phase AC inverter single phase 180 degrees ac phase inverter sensor 21E 22B PDF

    IRGKI200F06

    Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
    Text: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications


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    O-220AB IRG4BC40S IRGBC20S IRGBC30S IRGBC40S O-247AC IRG4PC40S IRGPC30S IRGPC40S 10-30kHz) IRGKI200F06 IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06 PDF

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


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    T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT PDF

    AN-983

    Abstract: AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


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    AN-983 1000C, AN-983 AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840 PDF

    INT-944

    Abstract: Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S
    Text: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2


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    AN-983 055mJ/A 1000C, INT-944 Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    IRGCC20UE

    Abstract: IRGBC20U IRGCC20
    Text: Previous Datasheet Index Next Data Sheet PD-9.1431 TARGET IRGCC20UE IRGCC20UE IGBT Die in Wafer Form C 600 V Size 2 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage


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    IRGCC20UE IRGCC20UE NormiRGBC20U IRGBC20U IRGCC20 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes


    OCR Scan
    IRGBC20UD2 application16 TQ-220AB PDF

    D-12

    Abstract: IRGBC20U 12FFL
    Text: P D - 9.681 A International S Rectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency {over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBC20U O-220AB D-12 12FFL PDF

    IRGBC20UD2

    Abstract: No abstract text available
    Text: htemational PD - 9.790 [tor]Rectifier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz


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    IRGBC20UD2 TQ-220AB IRGBC20UD2 PDF

    Untitled

    Abstract: No abstract text available
    Text: P D - 9.681 A bitemational KgLRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBC20U O-220AB TQ-220AB PDF

    transistor c655

    Abstract: No abstract text available
    Text: PD - 9.681 A bitemational EggRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve


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    IRGBC20U O-220AB O-22QAB transistor c655 PDF

    IRGB430UD2

    Abstract: IRGTI140U06 CPV362MU IRGPC50U
    Text: Illl E S S I n t e r n a t i o n a l R e c t if i e r Insulated Gate Bipolar Transistors VCES Colector to Emitter Voltage Volts PMt Number M«*VcE(on) Colector to Emitter Voltage (Volts) IGBTs ICContinuous Colector Current Tc=25‘ C Tc=100*C (Amps) (Amps)


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    30kHz) O-220AB O-247AC IRGB420UD2 IRGB430UD2 IRGP430UD2 IRGP440UD2 IRGP450UD2 IRGTI140U06 CPV362MU IRGPC50U PDF

    CPV362MU

    Abstract: No abstract text available
    Text: International ËüRectffier iGBTs UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency/— Optimized for Pow er Conversion UltraFast •c Part Number V CES Collector to Emitter Voltage Majt VcE(on) Collector to Emitter


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    IRGB420U IRGB430U IRGB440U IRGP420U IRGP430U IRGP440U IRGP450U T0-220AB 247AC IRGB420UD2 CPV362MU PDF