IRGBC20U Search Results

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

Contextual Info: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

transistor c655

Abstract: D-12 IRGBC20U
Contextual Info: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

D-12

Abstract: IRGBC20U 12FFL
Contextual Info: P D - 9.681 A International S Rectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency {over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGBC20UD2

Contextual Info: htemational PD - 9.790 [tor]Rectifier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

transistor IR 652 H GC

Abstract: D-12 IRGBC20U C655 LAmp igbt 600V
Contextual Info: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

transistor c693

Abstract: transistor C698 IRGBC20UD2
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

D-12

Abstract: IRGBC20U C655 LAmp
Contextual Info: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

IRGBC20UD2

Abstract: transistor C698 transistor c693 C-696 c698 transistor
Contextual Info: PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

transistor c693

Abstract: c698 transistor transistor C698 c693 transistor IRGBC20UD2 C698 C696 C693 IRGBC20UD
Contextual Info: PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: P D - 9.681 A bitemational KgLRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

transistor c655

Contextual Info: PD - 9.681 A bitemational EggRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

D-12

Abstract: IRGBC20U
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

3 phase inverter 120 conduction mode waveform

Abstract: 3 phase inverter 180 conduction mode waveform 1 HP SINGLE PHASE induction motor speed control using pwm inverter LM2907J inverter 12v to 220 ac mosfet based 120 degree conduction mode of an inverter 220VAC single phase AC inverter ML4423 single phase 180 degrees ac phase inverter sensor 21E 22B
Contextual Info: April 1998 Application Note 42037 ML4423 Application Guidelines INTRODUCTION Depending on the application, the focus of a given motor control design can fall on one of many specific parameters. Different applications may require that special attention be given to a specific control method to

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGB430UD2

Abstract: IRGTI140U06 CPV362MU IRGPC50U
Contextual Info: Illl E S S I n t e r n a t i o n a l R e c t if i e r Insulated Gate Bipolar Transistors VCES Colector to Emitter Voltage Volts PMt Number M«*VcE(on) Colector to Emitter Voltage (Volts) IGBTs ICContinuous Colector Current Tc=25‘ C Tc=100*C (Amps) (Amps)

AN-983

Abstract: AN983 INT-944 PN channel MOSFET 10A equivalent irf840 IRF840 complementary irgbc20u Similar Equivalent transistors for IRGPC50U sec irf840 TRANSISTOR mosfet IRF840
Contextual Info: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2

3 phase dc control ir2130

Abstract: igbt driver ir2130 circuit IR2130S smd 3 phase rectifier bridge MP816 Design Tips for IR2130 IR2130J IRGBC30KD AN-985 IR2130 APPLICATIONS
Contextual Info: DESIGN TIPS International Rectifier DESIGN TIPS DT 93-6AJ ・APPLICATION ENG・ ・233 KANSAS ST.・ ・EL SEGUNDO,CA.90245・ ・TEL（310） ）322-3331・ ・FAX（310） ）322-3332 INTERNATIONAL RECTIFIER・ モーター駆動用に極小化した パワー･エレクトロニクス

INT-944

Abstract: Equivalent transistors for IRGPC50U INT-990 1000C AN-983 BUX98 C50U IRF840 IRGBC20U IRGBC40S
Contextual Info: Application Note AN-983 IGBT Characteristics 1. How The IGBT Complements The Power MOSFET . 1 2. Silicon Structure And Equivalent Circuit . 2 3. Conduction Characteristics. 2

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

CPV362MU

Contextual Info: International ËüRectffier iGBTs UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency/— Optimized for Pow er Conversion UltraFast •c Part Number V CES Collector to Emitter Voltage Majt VcE(on) Collector to Emitter

IRGCC20UE

Abstract: IRGBC20U IRGCC20
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1431 TARGET IRGCC20UE IRGCC20UE IGBT Die in Wafer Form C 600 V Size 2 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage