IRGBC20K Search Results

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

c918

Abstract: C918 diode C913
Contextual Info: International e?rRectifier P D -9.1125A IRGBC20KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-ioss rating includes all "tail" losses

gFE smd diode

Abstract: AN-994 IRGBC20KD2-S SMD-220
Contextual Info: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes

transistor c915

Abstract: C918 diode transistor c913 transistor c914 C919 diode c918 c916 transistor C913 smd diode 917 b 140 c914
Contextual Info: Iitemational [ÏÔR]Rectifier PD - 9.1125A IRGBC20KD2-S Short Circüit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated - 1 0 m s @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

transistor smd MJ 145

Abstract: g10 smd transistor transistor smd bh SMD Transistor 502 c858
Contextual Info: P D - 9.1130 International [iÖR1Rectifier IRGBC20K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features 10 • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating inciudes all "tail* losses • Optimized for high operating frequency over 5kHz

c838 transistor

Abstract: transistor C839 C839 c839 transistor c838 D-12 IRGBC20K C839 H
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

transistor smd MJ 145

Abstract: AN-994 IRGBC20K-S SMD-220 g10 smd transistor GC smd transistor
Contextual Info: PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over

transistor c900

Abstract: c897 c901 transistor transistor c904 transistor c903 C899 C9-03 transistor c902 LTA 902 TE 901
Contextual Info: PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

c839 transistor

Abstract: c838 transistor transistor C839 C838 TRANSISTOR c842 C839 C842 C837 VQE 21 d C839 H
Contextual Info: htemational S Rectifier P D -9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - 10ps @ 125°C, Vqe = 15V • Switching-loss rating includes all 'tail1' losses • Optimized for high operating frequency over 5kHz

transistor c900

Abstract: transistor c904 transistor c903 c901 transistor transistor c902 C897 c898 TRANSISTOR C898 c902 C901
Contextual Info: International [TOR]Rectifier P D - 9.1105 IRGBC20KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features VcES = 600V • Short circuit rated -10ps @125°C, Vqe = 15V • Switching-loss rating includes all 'tail" losses

Contextual Info: P D - 9.1130 International ^R ectifier IRGBC20K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c r • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

transistor C839

Abstract: c839 transistor
Contextual Info: International îQRjRectifier P D - 9.1128 IRGBC20K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • Short circuit rated - Ktys @ 125°C, V ge = 15V Vces = 600V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

transistor c904

Abstract: c901 transistor transistor c900 C899 C897 transistor c902 IRGBC20KD2 C901 transistor c903
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

smd transistor yc

Abstract: transistor SMD yc smd tr yc AN-994 D-12 IRGBC20K-S SMD-220 C858 c856
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

c838 transistor

Abstract: transistor C839 c839 D-12 IRGBC20K C842 c839 transistor gc 840 C838
Contextual Info: PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

transistor c900

Abstract: transistor c904 IRGBC20KD2 c897 C901 transistor c903 c901 transistor
Contextual Info: PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

g10 smd transistor

Abstract: IRGBC20KD2-S AN-994 SMD-220 GC smd diode
Contextual Info: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes

transistor c903

Contextual Info: P D - 9.1105 International Irai Rectifier IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-loss rating includes all "tail" losses

IRG4BC20

Abstract: IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001
Contextual Info: PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V

IRGBC20K-S

Abstract: IRGBC20M-S AN-994 IRG4BC20K-S
Contextual Info: PD - 91620A IRG4BC20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high

AN-994

Abstract: IRGBC20KD2-S IRGBC20MD2-S
Contextual Info: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

TRANSISTOR 9642

Abstract: 9544 transistor T0247 package what is fast IGBT transistor IRG4PC50U Equivalent transistors for IRG4PC50U IRG4BC20FD 600V 16 TO220 IRGPC40U irg4ph50ud IRGB440U
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications