IRGPC40U Search Results

diode C721

Abstract: transistor C717 transistor C719 diode C722 transistor C721 diode c723 c721 diode C720 transistor C718 c719 diode
Contextual Info: PD - 9.808A IRGPC40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

10PH

Abstract: C685 DDBG473 IRGPC40U
Contextual Info: PD - 9.684A International m i Rectifier IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International ^Rectifier PD - 9.684A IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

transistor C717

Abstract: diode C722 transistor C723 diode c723 transistor C718 diode C720 diode c724 transistor C722 C723 DIODE C80 diode
Contextual Info: htam aHnnal PD - 9.808A SogRectifier IRGPC40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-los8 rating includes all "tail" losses • HEXFRED soft ultratest diodes • Optimized for high operating frequency over 5kHz

C683

Abstract: C685 C684 IRGPC40U igbt 400V 20A transistor c681 c681
Contextual Info: PD - 9.684A IRGPC40U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

transistor C717

Abstract: diode C722 diode C720 transistor C723 IRGPC40UD2 diode C721 diode c723 international rectifier 721 DIODE C719
Contextual Info: PD - 9.808A IRGPC40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

IRGPC40U

Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.684A IRGPC40U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

1RGPC40

Abstract: transistor c681 IRGPC40U C683 TRANSISTOR BIPOLAR 400V 20A C681 G682 mosfet 600V 20A 50 KHz G68-2 rg101
Contextual Info: International SœlRectifier PD - 9.684A IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-ioss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Rg. 1 for Current vs. Frequency curve

IRGPC40U

Abstract: c685
Contextual Info: PD - 9.684A IRGPC40U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

diode C721

Abstract: c719 transistor
Contextual Info: PD - 9.808A kitemational lüRectifier IRGPC40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: PD - 9.684A htemational gÖR]Rectifier IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all “tail" losses * Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

transistor C723

Abstract: transistor C717 diode C721 diode C720 c719 diode transistor C719 IRGPC40UD2 diode c723 C719
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.808A IRGPC40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

IRGKI200F06

Abstract: IRGNIN150M06 IRGTI165F06 IRGBC20FD2 IRGKI115U06 irgti140u06 IRG4PC40S IRGPH40FD2 IRG4BC30UD IRGNI115U06
Contextual Info: IGBTs International Rectifier Max V CE on Collector-to-Emitter Collector-to-Emitter Voltage Voltage V CES Part Number (V) (V) IC Continuous Collector Current T C= 25°C T C = 100°C (A) (A) P Max. D Power Dissipation (W) Fax-on-Demand Low VCE(on) IGBTs for Low Frequency (DC ~ 1kHz) Power Applications

9544 transistor

Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
Contextual Info: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics

IRGB430UD2

Abstract: IRGTI140U06 CPV362MU IRGPC50U
Contextual Info: Illl E S S I n t e r n a t i o n a l R e c t if i e r Insulated Gate Bipolar Transistors VCES Colector to Emitter Voltage Volts PMt Number M«*VcE(on) Colector to Emitter Voltage (Volts) IGBTs ICContinuous Colector Current Tc=25‘ C Tc=100*C (Amps) (Amps)

IRGCC40UE

Abstract: IRGPC40U
Contextual Info: PD-9.1426 IRGCC40UE IRGCC40UE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGCC40

Abstract: IRGCC40UE IRGPC40U
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1426 IRGCC40UE IRGCC40UE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

Contextual Info: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

CPV362MU

Contextual Info: International ËüRectffier iGBTs UltraFast IGBTs for Higher Frequency 10 -3 0 k H z Pow er Applications High Efficiency/— Optimized for Pow er Conversion UltraFast •c Part Number V CES Collector to Emitter Voltage Majt VcE(on) Collector to Emitter

IRGPH50U

Abstract: IRGPH50FD2 IRGB420UD2 IRGTA090F06 IRGP420UD2 IRGTI090U06 IRGBC30U irgph40fd1 IRGTI140U06 irgpc50m
Contextual Info: Co-Packs - IGBT's Other Products Fro m IR Fast Speed Co-Packs Applications: Motor Controls, U P S ’s Industrial V B R C E S C o lle c to r to P a rt N u m b e r E m itte r B re a k d o w n V C E (o n ) 'c C o lle c to r to C o n tin u o u s C o llec tor

"AN-978" IR2110

Abstract: IR2110 CHOPPER AN937A AN-978 IR2110 bc40f AN-937A IR2110 LDIC NOTES ENG233 AN944A
Contextual Info: APPLICATION NOTES Savings tips that add value to your designs. INTERNATIONAL RECTIFIER¥APPLICATION ENG¥233 KANSAS ST.¥EL AN-990AJ IGBTの応用特性 HEXFREDはInternational Rectifier社の商標 By Steve Clemente