IRGCC40 Search Results

IRGCC40KE

Abstract: IRGPC40K
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

IRGCC40KE

Abstract: IRGPC40K
Contextual Info: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

91428

Abstract: IRGCC40FE IRGPC40F IRGCC40F
Contextual Info: PD-9.1428 TARGET IRGCC40FE IRGCC40FE IGBT Die in Wafer Form C 600 V Size 4 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGCC40UE

Abstract: IRGPC40U
Contextual Info: PD-9.1426 IRGCC40UE IRGCC40UE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

IRGCC40

Abstract: IRGCC40UE IRGPC40U
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1426 IRGCC40UE IRGCC40UE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

Contextual Info: International pc-9.1428 IRGCC40FE IQRRectifi Gf_ TARGET IRGCC40FE IGBT Die in Wafer Form 600 V Size 4 Fast Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) Cotlector-to-Em itter Saturation Voltage

Contextual Info: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage

Contextual Info: PD-9.1426 International IO R Rectifier IRGCC40UE IRGCC40UE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) C ollector-to-Em itter Saturation Voltage

91428

Abstract: IRGCC40FE IRGPC40F IGBT IRGPC40F 914-28 IRGCC40F IRGCC40
Contextual Info: Previous Datasheet Index Next Data Sheet PD-9.1428 TARGET IRGCC40FE IRGCC40FE IGBT Die in Wafer Form C 600 V Size 4 Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage

IRGCC40KE

Abstract: IRGPC40K for IR IGBT die
Contextual Info: PD-9.1427 TARGET IRGCC40KE IRGCC40KE IGBT Die in Wafer Form C 600 V Size 4 Ultra-Fast Speed 5" Wafer G E Electrical Characteristics Wafer Form Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage

transistor tc 144

Abstract: IRGBC46 IRGBC30 IRGPC56 for IR IGBT die D50 transistor IRGBC26 IGBT die IRGCC50 IRGBC40
Contextual Info: International Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes Part Number BVc es Collector to Emitter Breakdown Voltage IRGBC20 VCE on Collector to Emitter Saturation Voltage (1) VGE(th) Gate to Emitter Threshold Voltage Min (V) Max

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.