IRGBC20 Search Results

D-12

Abstract: IRGBC20F
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

IRGKI200F06

Abstract: IRGNIN150M06 IRGKI120F06 IRGDDN600M06 IRGKI115U06 IRGBC20FD2 IRGTIN025M12 IRGTI140U06 IRGPC50U IRGKI165F06
Contextual Info: IGBT Designer’s Manual Selection Guide B-1 Single Switch without Diode Current Rating A 500 5-10 11-15 IRGB420U IRGP420U 16-20 21-25 IRGB430U IRGP430U 26-30 31-40 600 900 1200 IRGBC20K IRGPC20K IRGBC20K-S IRGBC20M IRGBC20M-S IRGPC20M IRGBC20U IRGPC20U

mosfet 10a 600v

Abstract: D-12 IRGBC20S rectifier IGBT IRGBC20S IGBT
Contextual Info: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S

Contextual Info: PD - 9.790 International lüHRectffier IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features V ces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

c918

Abstract: C918 diode C913
Contextual Info: International e?rRectifier P D -9.1125A IRGBC20KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-ioss rating includes all "tail" losses

Contextual Info: P D - 9.1106 International H^lRectffier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -1 Ops @125°C, VGE = 15V • Switching-loss rating includes all "tail” losses

D-12

Abstract: IRGBC20F
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

gFE smd diode

Abstract: AN-994 IRGBC20KD2-S SMD-220
Contextual Info: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes

D-12

Abstract: IRGBC20S vqe 23 VQE 24 vqe 24 d transistor CD 910
Contextual Info: PD - 9.687A International |k>r|Rectifier IRGBC20S INSULATED GATE BIPOLAR TRANSÌSTOR Standard Speed IGBT Features • Swiiching-loss rating includes all "tail" tosses • Optimized tor line frequency operation { to 400 Hz See Fig. 1 tor Current vs. Frequency curve

transistor c915

Abstract: C918 diode transistor c913 transistor c914 C919 diode c918 c916 transistor C913 smd diode 917 b 140 c914
Contextual Info: Iitemational [ÏÔR]Rectifier PD - 9.1125A IRGBC20KD2-S Short Circüit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE c Features • • • • Short circuit rated - 1 0 m s @125°C, VGe = 15V Switching-loss rating includes all "tail" losses

IRGBC20MD2

Abstract: transistor c354
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1106 IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRGBC20S

Abstract: IRGBC20S IGBT
Contextual Info: International BggRectifier IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.687A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve

400HZ

Abstract: IRGBC20SD2 igbt 200V 5A t4vd
Contextual Info: PD-9.1544 IRGBC20SD2 PROVISIONAL Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V • Switching-loss rating includes all 'tail' losses • HEXFREDTM soft ultrafast diodes • Optimized for line frequency operation to 400HZ

GC 301

Abstract: lta 301 D-12 IRGBC20M
Contextual Info: PD - 9.1127 IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International giilRectifier PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses V c es = 6 0 0 V • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

transistor smd MJ 145

Abstract: g10 smd transistor transistor smd bh SMD Transistor 502 c858
Contextual Info: P D - 9.1130 International [iÖR1Rectifier IRGBC20K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features 10 • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating inciudes all "tail* losses • Optimized for high operating frequency over 5kHz

transistor tc 144

Abstract: IRGBC46 IRGBC30 IRGPC56 for IR IGBT die D50 transistor IRGBC26 IGBT die IRGCC50 IRGBC40
Contextual Info: International Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes Part Number BVc es Collector to Emitter Breakdown Voltage IRGBC20 VCE on Collector to Emitter Saturation Voltage (1) VGE(th) Gate to Emitter Threshold Voltage Min (V) Max

TRANSISTOR C306

Abstract: transistor c308 G304
Contextual Info: P D - 9.1127 htemational Ë»! Rectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: IRGBC20FD2 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)20 I(C) Max. (A)16 Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case2.1 Thermal Resistance Junc-Amb.80 g(fe) Min. (S) Trans. admitt.2.9

IRGBC20FD2

Abstract: D-12 T4 diode 18-A
Contextual Info: IRGBC20FD2 90% Vge +Vge Vce Same type device as D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce td off D.U.T. tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µS Vce ic dt

c838 transistor

Abstract: transistor C839 C839 c839 transistor c838 D-12 IRGBC20K C839 H
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

transistor C372

Abstract: c372 transistor transistor C368 c371 transistor AN-994 IRGBC20MD2-S SMD-220 C-366 C369 transistor c369
Contextual Info: PD - 9.1141 IRGBC20MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

c337 transistor

Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
Contextual Info: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to