G10 SMD TRANSISTOR Search Results

G10 SMD TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

G10 SMD TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
diode in48 Abstract: IN58 diode SN105125 Text: User's Guide SBAU186 – March 2011 DDC264EVM User's Guide DDC264EVM This user's guide describes the characteristics, operation, and use of the DDC264EVM. This evaluation module EVM is an evaluation kit for evaluating the DDC264, a 64-channel, current input, 20-bit	Original	PDF	SBAU186 DDC264EVM DDC264EVM DDC264EVM. DDC264, 64-channel, 20-bit DDC264 DDC264EVMm diode in48 IN58 diode SN105125
smd code A9 3 pin transistor Abstract: smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9 Text: High Speed Converter Evaluation Platform HSC-ADC-EVALC FEATURES PRODUCT HIGHLIGHTS Xilinx Virtex-4 FPGA-based buffer memory board Used for capturing digital data from high speed ADC evaluation boards to simplify evaluation 64 kB FIFO depth Parallel input at 644 MSPS SDR and 800 MSPS DDR	Original	PDF	ADP3339AKCZ-3 SKHHAKA010 CBSB-14-01 DPS050300U-P5P-TK ADR512ART ERJ-2GEJ622X ERJ-2GE0R00X ERJ-2GEJ133X ERJ-2GEJ102X ECJ-0EB0J224K smd code A9 3 pin transistor smd TRANSISTOR code b6 g10 smd transistor "SMD Code" b14 smd diode ecg manual ic SMD D8B smd transistor g11 smd transistor m6 smd transistor G9
1805-1880MHz power amplifier Abstract: No abstract text available Text: ACPM-5001-TR1 Multimode PA - UMTS Band1 and CDMA IMT 1920-1980MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5001-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band1 and CDMA IMT band(Band6).	Original	PDF	ACPM-5001-TR1 1920-1980MHz) ACPM-5001-TR1 10-pin 25dBm 50ohm AV02-2476EN 1805-1880MHz power amplifier
ACPM-5001 Abstract: SMD Transistor g25 ACPM-5001-TR1 A5001 cdma complete layout drawing g25 SMD Transistor smd transistor g19 Text: ACPM-5001-TR1 Multimode PA - UMTS Band1 and CDMA IMT 1920-1980MHz 3x3mm Power Ampliﬁer Module with Coupler Data Sheet Description Features The ACPM-5001-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band1 and CDMA IMT band(Band6).	Original	PDF	ACPM-5001-TR1 1920-1980MHz) ACPM-5001-TR1 10-pin 25dBm 50ohm AV02-2476EN ACPM-5001 SMD Transistor g25 A5001 cdma complete layout drawing g25 SMD Transistor smd transistor g19
Untitled Abstract: No abstract text available Text: ACPM-5001-TR1 Multimode PA - UMTS Band1 and CDMA IMT 1920-1980MHz 3x3mm Power Amplifier Module with Coupler Data Sheet Description Features The ACPM-5001-TR1 is a fully matched 10-pin surface mount module developed to support multimode applications including UMTS Band1 and CDMA IMT band(Band6).	Original	PDF	ACPM-5001-TR1 1920-1980MHz) ACPM-5001-TR1 10-pin 25dBm 50ohm AV02-2476EN
2.4ghz lnb Abstract: 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter Text: Selection Matrix 3 dB Hybrid Couplers Model Number Package Size [Inch] Freq. Band [MHz] Ins. loss [dB max] Isolation [dB min] VSWR [max:1] ± Amp. Bal. [dB max] 90 ± Ph. Bal [deg. max] Avg. Power [W max] XC0450A-03 XC0450L-03	Original	PDF	XC0450A-03 XC0450L-03 XC0450E-03 1F1304-3 XC0900P-03 XC0900E-03 XC0900A-03 XC0900L-03 S03B888N3 XC1400P-03 2.4ghz lnb 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter
TTDLF-2500 Abstract: TRANSISTOR SMD CF5 PQFQ-64 LCR-LRF2512-01-R010-F SMD cf5 LED SMD WARM WHITE 3W BSS119E6327 nec opto-coupler manual GBLC03C equivalent P4N1 Text: User's Guide SLVU126D – March 2005 – Revised July 2011 TPS2384 Evaluation Module This user’s guide describes the TPS2384 HPA109 evaluation module EVM and contains the EVM schematic, bill of materials, assembly drawing, and top and bottom board layouts.	Original	PDF	SLVU126D TPS2384 HPA109 TTDLF-2500 TRANSISTOR SMD CF5 PQFQ-64 LCR-LRF2512-01-R010-F SMD cf5 LED SMD WARM WHITE 3W BSS119E6327 nec opto-coupler manual GBLC03C equivalent P4N1
1PS74SB43 Abstract: PMEG1020EA PMEG2010EA luebbe SOD523 footprint PMEM4010ND PMEM4010PD SC-76 transistor smd 4s npn Text: Application Note The PMEG1020EA and PMEG2010EA MEGA Schottky diodes Philips Semiconductors AN10230-01 The PMEG1020EA and PMEG2010EA MEGA Schottky diodesa pair designed for high efficiency rectification by Martin Lübbe Introduction Schottky diodes have found various applications in the fields of power supply and power management. Some	Original	PDF	PMEG1020EA PMEG2010EA AN10230-01 PMEG2010EA 1PS74SB43 luebbe SOD523 footprint PMEM4010ND PMEM4010PD SC-76 transistor smd 4s npn
toshiba smd marking code transistor Abstract: transistor SMD making code GC injection molding machine wire diagram TLR121 5252 F 1002 GE miniature Lamp data book toshiba smd diode a5 catalogue automatic lamp LED wavelength 440 smd toshiba smd marking Text: LED Lamps APPLICATION GUIDE 1. What are LED Lamps? LED APPLICATION Guide 1-1 LED Chip Types Materials and Structure LEDs are compound semiconductor devices. Their optical wavelength depends on the elements and the ratio between them. An LED's luminescence is based on the recombination of the minority carriers (holes and electrons) in a PN junction.	Original	PDF
Maxwell PROCESS Abstract: No abstract text available Text: TECHNICAL INFORMATION SURFACE MOUNT SOLDERING TECHNIQUES AND THERMAL SHOCK IN MULTILAYER CERAMIC CAPACITORS John Maxwell AVX Corporation Abstract: All components used in surface mount assemblies have temperature processing limitations that must be adhered to for	Original	PDF	wh80-539-1501 S-SMST00M301-R Maxwell PROCESS
mlc avx capacitors cte Abstract: cte table Vapor Phase Soldering tantalum capacitors Invar 36 cte table epoxy substrate Text: TECHNICAL INFORMATION SURFACE MOUNT SOLDERING TECHNIQUES AND THERMAL SHOCK IN MULTILAYER CERAMIC CAPACITORS John Maxwell AVX Corporation Abstract: All components used in surface mount assemblies have temperature processing limitations that must be adhered to for	Original	PDF	S-SMST00M301-R mlc avx capacitors cte cte table Vapor Phase Soldering tantalum capacitors Invar 36 cte table epoxy substrate
Untitled Abstract: No abstract text available Text: SPIO-4 Precision Signal-Path Controller Board Users' Guide December 2010 Table of Contents 1.0 SPIO-4 System Overview . 3 1.0 SPIO-4 System Overview . 3	Original	PDF
88E1119R Abstract: 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13 Text:  LatticeECP3 Versa Evaluation Board User’s Guide August 2012 Revision: EB62_01.5  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the	Original	PDF	25MHz HDR40 ATS120SM-1 HC-49/US-SM 25MHZ 1K-0402SMT 20K-0402SMT 100PF-0402SMT 3UF-10V-0805SMT HC49US-25 88E1119R 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13
88E1119R Abstract: 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13 Text:  LatticeECP3 Versa Evaluation Board User’s Guide February 2012 Revision: EB62_01.4  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the	Original	PDF	HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X 100PF-0402SMT 88E1119R 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13

samsung s3c2440 user manual Abstract: schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet Text: H/W Design Guide System Controller S3C2440A 32-Bit RISC Microprocessor October, 2007 REV 1.0 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2440A_H/W DESIGN GUIDE_REV 1.0 Important Notice	Original	PDF	S3C2440A 32-Bit S3C2440A 22uF/36V 7uF/16V 47uF/16V MMBT3904 ATS49) 237X165X2t, samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler samsung s3c2440 arm920t core samsung lcd inverter schematic S3C2440 LCBHBT161M datasheet
smd transistor 5B1 Abstract: s3c2450 5b1 smd transistor SMD Transistor Y23 SMDK2450 PJ-327-2 2A5 SMD transistor 1a6 SMD transistor 5B1 transistor smd 1B6 SMD transistor Text: 5 4 3 2 1 SMDK2450 Evaluation Board for S3C2450X 1. PCB Revision D Rev 0.0 Rev 0.1 Rev 0.2 Date Description 2007. 11. 22 2008. 2. 21 2008. 4. 07 2008. 5. 14 2008. 5. 29 2008. 6. 30 2008. 7. 02 Preliminary Version Modified in Cam/LCD ref Red Circle/Rectangle	Original	PDF	SMDK2450 S3C2450X S3C2450 Add19 BSE-060-01 SMDK2450 smd transistor 5B1 5b1 smd transistor SMD Transistor Y23 PJ-327-2 2A5 SMD transistor 1a6 SMD transistor 5B1 transistor smd 1B6 SMD transistor
lt1149 Abstract: No abstract text available Text: LT1676 Wide Input Range, High Efficiency, Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Wide Input Range: 7.4V to 60V 700mA Peak Switch Current Rating Adaptive Switch Drive Maintains Efficiency at High Load Without Pulse Skipping at Light Load	Original	PDF	LT1676 700mA 100kHz 250kHz 500kHz LT1375) LT1620 LT1776 LT1676 200kHz lt1149
transistor C2075 Abstract: g10 smd transistor SMD Transistor 1c Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from	OCR Scan	PDF	74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c
g10 smd transistor Abstract: SMD Transistor g10 f1n diode apk mosfet smd MARKING smd transistor MARKING lg pbd marking Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistor Micro8,u devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process to	OCR Scan	PDF	EIA-481-1. g10 smd transistor SMD Transistor g10 f1n diode apk mosfet smd MARKING smd transistor MARKING lg pbd marking
transistor c1684 Abstract: No abstract text available Text: fiJUALITY T E C H N O L O G I E S 6 CORP 27 E QUALITY TECHNOLOGIES 1 D • 74fc,bflSl G 0 D 3 S 3 7 Ö phototrahs.stor optocouplhr ^ L MCT272 DESCRIPTION PACKAGE DIMENSIONS The MCT272 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is	OCR Scan	PDF	MCT272 MCT272 MCT9001 transistor c1684
Untitled Abstract: No abstract text available Text: dUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES e S7E D 7 4 h b Ö S 1 000354*1 4 PHOTOTRANSISTOR OPTOCOUPLERS T—41-83 MCT276 PACKAGE DIMENSIONS db The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is	OCR Scan	PDF	MCT276 MCT276 m-78T C2079 MCT9001
SMD Transistor AFR Abstract: No abstract text available Text: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is	OCR Scan	PDF	74bbfl51 T-41-83 MCT277 MCT277 C2090 15pseconds MCT9001 SMD Transistor AFR
transistor 41 74t Abstract: smd TRANSISTOR 27e Text: d U A L I T Y - T E C H N O L O G I E S CORP QUALITY TECHNOLOGIES S7E ì> 74bhfl51 □ □ □ 3 5 5 1 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS _ T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z PACKAGE DIMENSIONS ifil DESCRIPTION The MCT2200, MCT2201 and MCT2202 are optoisolators with phototransistor output. A gallium arsenide	OCR Scan	PDF	74bhfl51 T-41-83 MCT2200/0Z MCT2201/1Z MCT2202/2Z MCT2200, MCT2201 MCT2202 MCT2200â MCT2201â transistor 41 74t smd TRANSISTOR 27e
A1010APG84B Abstract: A1280Acq Text: ACT 1 and ACT 2 Military Field Programmable Gate Arrays ACT 1 Features ACT 2 Features • * U p to 2000 G ate A rray G ates 6000 PL D eq u iv alen t gates • R eplaces up to 53 T T L P ackages • R eplaces up to seventeen 20-P in PAL Packages •	OCR Scan	PDF	20-Pin 172-Pin A1010APG84B A1280Acq

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G10 SMD TRANSISTOR Search Results

G10 SMD TRANSISTOR Result Highlights (5)

G10 SMD TRANSISTOR Datasheets Context Search

diode in48

smd code A9 3 pin transistor

1805-1880MHz power amplifier

ACPM-5001

Untitled

2.4ghz lnb

TTDLF-2500

1PS74SB43

toshiba smd marking code transistor

Maxwell PROCESS

mlc avx capacitors cte

Untitled

88E1119R

88E1119R

samsung s3c2440 user manual

smd transistor 5B1

lt1149

transistor C2075

g10 smd transistor

transistor c1684

Untitled

SMD Transistor AFR

transistor 41 74t

A1010APG84B