IRGBC40 Search Results

Contextual Info: PD - 9.690A bìtemational gH Rectifier IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to400 Hz See Fig. 1 forCurrentvs. Frequency curve

D-12

Abstract: IRGBC40F
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

c313 TRANSISTOR DATA

Contextual Info: fcitemational ! ör]Rectifier Preliminary Data Sheet P D - 9.1074 IRGBC40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V q e = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

GC smd transistor

Abstract: AN-994 IRGBC40K-S SMD-220
Contextual Info: PD - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over

GC 380

Abstract: D-12 IRGBC40F
Contextual Info: PD - 9.691A IRGBC40F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.0V

c613 TRANSISTOR

Contextual Info: Preliminary Data Sheet P D - 9.1074 International i«?1Rectifier IRGBC40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: International ijæ]Rectifier P D - 9.691 A IRGBC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR 4 Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

IRGBC40U

Abstract: D-12
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

D-12

Abstract: IRGBC40U G607 1RGBC40U
Contextual Info: PD - 9.683A International «»Rectifier IRGBC40U UltraFasi IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

D-12

Abstract: IRGBC40F cd200
Contextual Info: PD -9.691A International llQRRectifier IRGBC40F Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features * Switching-ioss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: PD -9.691 A bitemational [ÎÔR ]Rectifier IRGBC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR r Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International ^Rectifier Preliminary Data Sheet PD - 9.1135 IRGBC40M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

g10 smd transistor

Abstract: transistor c347 SMD Transistor g10 C348 gFE smd diode AN-994 D-12 IRGBC40M-S SMD-220 c347 transistor
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

c849

Abstract: D-12 IRGBC40K al c850
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1073 IRGBC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: International ^ R e c tifie r P D - 9.1134 IRGBC40K-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast Fast IGBT Features c • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: International IM] Rectifier Preliminary Data Sheet PD - 9.1135 IRGBC40M-S Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10jjs @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

c313 TRANSISTOR DATA

Abstract: C-313 D-12 IRGBC40M
Contextual Info: Preliminary Data Sheet PD - 9.1074 IRGBC40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

C667 transistor

Abstract: transistor C663 IRGBC40U D-12 C665 C-666
Contextual Info: PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

c313 TRANSISTOR DATA

Abstract: c313 transistor same C313 MOSFET 40A 600V C-313 D-12 IRGBC40M
Contextual Info: Preliminary Data Sheet PD - 9.1074 IRGBC40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

C668 transistor

Abstract: C667 transistor D-12 IRGBC40U
Contextual Info: PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

C667 transistor

Abstract: D-12 IRGBC40U DSA00104749.txt
Contextual Info: PD - 9.683A IRGBC40U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

1RGBC40S

Abstract: C-15 D-12 IRGBC40S
Contextual Info: International Rectifier IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.690A Features • Switching-loss rating includes a!! "tail" losses • Optimized for line frequency operation to400Hz See Ffg. 1 for Current vs. Frequencycurve

IRGBC40S

Contextual Info: PD - 9.690A International regRectifier IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve

IRGBC40S

Abstract: C-15 C-16 D-12
Contextual Info: PD - 9.690A IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 1.8V