4A5S452 Search Results

F9530

Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
Contextual Info: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s

2N7268

Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

1RFZ34

Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Contextual Info: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7450 IRHN8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45Í2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: International BUlRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.694A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International [ï^l Rectifier • 1,1551,55 DGl,H* 013 " INR PD9390D IR F9510 HEXFET Power M O S F E T • • • • • • • INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching

ST203C

Contextual Info: Bulletin 125176/A International S Rectifier ST203C.C s e r ie s INVERTER GRADE THYRISTORS Hockey Puk Version Features • M e ta l c a s e w ith c e ra m ic in s u la to r ■ In te rn a tio n a l s ta n d a rd c a s e T 0 -2 0 0 A B A -P U K ■ A ll d iffu s e d d e s ig n

M6SS

Contextual Info: Bulletin 127094 rev. A 09/97 International IQR Rectifier IRK.L240 S E R IE S FAST RECOVERY DIODES MAGN-A-pak Power Modules Features • Fa st re c o v e ry tim e c h a ra c te ris tic s ■ E le c tric a lly is o la te d b a se p la te ■ In d u s tria l s ta n d a rd p a c k a g e

wiring VDG 13 relay

Abstract: IR6000 "international rectifier" ir6000 wiring VDG 14 relay driver injectors 24V 8 pins DIP relay pinout diagram R6000 DDE1363 SS452 D-6380
Contextual Info: r ì Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR 6 0 0 0 INTELLIGENT HIGH-SIDE □IN/IOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmQ Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and

Hirect

Abstract: IRGPC50U c687
Contextual Info: International ^Rectifier PD - 9.685A IRGPC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve Vces = 600V

2N7335

Abstract: IRFG110 IRFG9110 JANTX2N7335 JANTXV2N7335
Contextual Info: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IÖ R IRFG9110 2N7335 JANTXSN7335 JANTXVSN7335 HEXFET TRANSISTORS 4P CHANNEL POWER MDBFETs 14 L E A D D U A L -IN -L IN E Q U A D C E R A M IC S ID E B R A Z E D PAC KAG E [REF: MIL-S-19500/599] Product Summary

Contextual Info: Provisional Data Sheet No. PD - 9.1224B international I@R Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7360SE R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET

Contextual Info: UNR International Rectifier MflSSMSB 0015030 ATT HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER PD-9.561C IRL520 Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V g s =4V & 5V 175°C Operating Temperature Fast Switching

TRANSISTOR C483

Abstract: IRGPH50MD2
Contextual Info: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses

transistor C618

Abstract: c618 diode c617 transistor
Contextual Info: International jajRectffier_ IRGB420UD2 p d INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE -# .« » UltraFast CoPack IGBT Features V ces = 500V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

Contextual Info: 4055432 0014722 bb3 • INR International i“R Rectifier PD-9.901 IRF630S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: PD - 9.1325A International l R Rectifier IRL2505 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Contextual Info: International S Rectifier PD - 9.1258A IR LM L2803 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel M O SFET SO T-23 Footprint Low Profile < 1.1 mm Available in Tape and Reel Fast Switching

Contextual Info: Bulletin 125153/B International [^Rectifier i s i PHASE CONTROL THYRISTORS r k i s e r i e Stud Version 180A Features • Hermetic glass-metal seal ■ dv/dt > 1000V/|js option ■ International standard case T0-209AB TO-93 ■ Threaded studs UNF 3/4 - 16UNF2A

Contextual Info: Bulletin 12092/B International S Rectifier s d 553C.ssol s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • High pow er FAST recovery diode series ■ 6.0 ps recovery tim e ■ High voltage ratings up to 4500V 560A ■ High current ca p a bility

Contextual Info: PD -9.1677A International IOR Rectifier IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode

IR8200B

Contextual Info: INTERNATIONAL RECTIFIER b5E D • 4ß55452 QQlfllbS 413 ■ INR Data Sheet No. PD-6.012A INTERNATIONA!. RECTIFIER I O R IR8200B 3A, 5 5 V DMOS H-BRIDGE POWER INTEGRATED CIRCUIT 11-PIN MOLDED SIP General Description Features The IR8200B is a 3A H-Bridge designed for motion

Contextual Info: Il International ü g Rectifier MflSSMSE ÜOm71G TMl • INR IRF624 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • PD-9.472B Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements bSE ]>

Contextual Info: International IggRectifier P D - 9.1022 IRGPC20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve