IRF9530 Search Results

IRF9530S

Abstract: SiHF9530S SiHF9530S-E3 SiHF9530S-GE3
Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

transistor mosfet irf9530

Abstract: IRF9530 transistor irf9530
Contextual Info: Tem ic IRF9530 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) -1 0 0 0.30 -1 2 TO-220AB “ Ö " Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Parameter Symbol

SiHF9530S-E3

Abstract: IRF9530S SiHF9530S IRF9530STRRPBF
Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Surface Mount Available in Tape and Reel

Contextual Info: P D -9.1523 International I Q R Rectifier IRF9530NS/L PRELIMINARY HEXFET Power M OSFET • Advanced Process Technology • Surface Mount IRF9530NS • Low-profile through-hole (IRF9530NL) • 175°C Operating Temperature • Fast Switching • P-Channel

IRF9120

Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
Contextual Info: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150

Contextual Info: P-CHANNEL POWER MOSFETS IRF9530/9531 FEATURES TO-220 • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

1RF9130

Abstract: L 9132 diode 9532 F913 IR 9530 irf 131 on irfp9131 IRF9130-2
Contextual Info: '"7964142 " S AM S U N G SEMICONDUCTO nhHJ,4d UUU54US 7 mFSi 30/913179132/9133 ^ 1RFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 Preliminary Specifications P -C H A N N E L T a -1 0 0 Volt, 0.30 Ohm SFET 0D0S40S ? PRODUCT SUMMARY Part Number Vus RoS on Id

91077

Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

irf9530

Abstract: irf 9530 f953
Contextual Info: IRF9530/9531 /9532/9533 c r S ilic a n ix in c o rp o ra te d P-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BR DSS (V) lDS(ON) ( il) (A) IRF9530 -100 0.30 -1 2 IRF9531 -6 0 0.30 -1 2 IRF9532 -100 0.40 -10 IRF9533

Contextual Info: IRF9530, SiHF9530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF9530N

Contextual Info: PD - 9.1482A IRF9530N PRELIMINARY HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.20Ω G ID = -13A

IRF9530 mosfet

Abstract: IRF9530 RF1S9530 RF1S9530SM RF1S9530SM9A TB334
Contextual Info: IRF9530, RF1S9530SM Data Sheet 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs [ /Title These are P-Channel enhancement mode silicon gate power IRF95 field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified

IRF9610

Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540

IRF9530N

Contextual Info: P D - 9.1482 International IOR Rectifier IRF9530N PRELIMINARY H E X F E # Power M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

diode SM 78A

Contextual Info: PD - 9.1482A International IO R Rectifier IRF9530N PRELIMINARY HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated

AN609

Abstract: IRF9530S SiHF9530S
Contextual Info: IRF9530S_RC, SiHF9530S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

irf9530

Abstract: irf9532 JEDEC TO-263A IRF9531
Contextual Info: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate

9916 mosfet

Abstract: AN-994 IRF9530S SMD-220
Contextual Info: PD-9.916 International i»R Rectifier IRF9530S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier provide the designer

irf 425

Abstract: ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL
Contextual Info: Semiconductor Directory Page 1.34 1.58 1.54 0.87 2.09 IRF INT IRF IRF IRF 815 824 815 Ñ 816 IRF9410 IRF9510 IRF9510S IRF9520 IRF9520 IRF9520N IRF9530 1.28 0.80 1.47 0.74 0.62 1.04 1.23 IRF IRF IRF IRF INT IRF INT 816 815 816 815 Ñ 814 824 Ñ 824 Ñ 816 815

Contextual Info: PD - 94929 IRF9530PbF • Lead-Free Document Number: 91076 1/8/04 www.vishay.com 1 IRF9530PbF Document Number: 91076 www.vishay.com 2 IRF9530PbF Document Number: 91076 www.vishay.com 3 IRF9530PbF Document Number: 91076 www.vishay.com 4 IRF9530PbF Document Number: 91076

Contextual Info: P D - 9 .1 5 2 3 International IQR Rectifier PRELIMINARY IRF9530NS/L HEXFET Power MOSFET • • • • • • • Advanced Process Technology Surface Mount IRF9530NS Low-profile through-hole (IRF9530NL) 175°C Operating Temperature Fast Switching P-Channel