IRHM7150 Search Results

2N7268

Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

H209

Abstract: H214
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l l O R 1 REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS SN7S68 JANSRSN7SB8 JANSHSN7S68 N-CHANNEL MEGA RAD HARO 100 Volt, 0.06512, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

IRF 260 N

Abstract: IRHM3150 IRHM4150 IRHM7150 IRHM8150 JANSR2N7268 JANSH2N7268
Contextual Info: PD - 90675D RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7150 JANSR2N7268 100V, N-CHANNEL REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7150 IRHM3150 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)

2N7268

Abstract: IRHM7150 IRHM8150 JANSH2N7268 JANSR2N7268
Contextual Info: PD - 90675B IRHM7150 IRHM8150 JANSR2N7268 JANSH2N7268 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 100Volt, 0.065Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

2N7268

Abstract: rectifier diode 20 amp 800 volt H209 IRHM7150 IRHM8150 h206
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER Ix o r I REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7S68 JANSR8N7SGB JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065ÏÏ, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

Contextual Info: PD - 90675D RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7150 JANSR2N7268 100V, N-CHANNEL REF: MIL-PRF-19500/603 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7150 IRHM3150 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)

M6G DATASHEET

Abstract: IRHM3150 IRHM4150 IRHM7150 IRHM8150 JANSR2N7268
Contextual Info: PD - 90675C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7150 JANSR2N7268 100V, N-CHANNEL REF: MIL-PRF-19500/603 RAD Hard ™ HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7150 100K Rads (Si) IRHM3150 300K Rads (Si) RDS(on)

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHC7110

Abstract: IRHC7130 IRHC7150 D47 MOSFET
Contextual Info: International [^Rectifier Government/ Space Products Radiation Hard HEXFETs N-Channel Part Number Vqs Drain Source Voltage Volts Resistance (Ohms) Ip Continuous Drain Current 25°C Case (Amps) •DM Pu'*« Drain Current (Amps) IRHN7150 IRHN8150 IRHN7250

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

2N7550

Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators

smd 662

Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Contextual Info: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

Contextual Info: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250

2N7268

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2013. MIL-PRF-19500/603J 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _

SHOCK+SENSOR+083

Contextual Info: International Government and Space llËSRectifier HEXFET Power MOSFETs Radiation Hardened N & P Channel 3 Part Number * bvDSS (V) R DS(on) (Ohms) >D@ TC = 100°C R thJC Max. P|J@ Tc = 25°C Outline (A) (A) (K/W) (W) Number (1) IRH7054 60 0.025 45 32 0.83

2N7269

Abstract: 2N7394 2N7270 2N7268 2N7269u 2N7270 mosfet 2N7268U 2N7394U marking IRH
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 July 2006. MIL-PRF-19500/603G 10 April 2006 SUPERSEDING MIL-PRF-19500/603F 10 November 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED