4AS54S2 Search Results

Contextual Info: 4055455 Q01G7bT Q • lO I f IN T E R N A T IO N A L r e c t i f i e r ' V0LTA0E ratings • PART t MUNICH 1 - I'M t>ap, p««ti t nd dlfiot «oltigi Î Y n s * - ïy l : Max* non-rap» path i ravaraa v o u i g » Tj * -40« to t Ma*. 19 R30D SERIES 3000-2400 VOLTS RANGE

Diode SMD SJ 66A

Contextual Info: P D -9.1646 International IGR Rectifier IR F 7 5 2 1 D 1 PRELIMINARY FETKY MOSFET and Schottky Diode • • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

RECTIFIER DIODE D135

Contextual Info: Bulletin 12085/A htemational S Rectifier sd 8ooc.l s e rie s STANDARD RECOVERY DIODES Hockey Puk Version Features 1200A • W id e current range ■ High voltag e ratings up to 4 5 0 0 V ■ High surge current capab ilities ■ Diffused junction ■ H ockey Puk version

Contextual Info: PD 9.1571 International IG R Rectifier IR G 4 R C 1 0 U D PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200

Contextual Info: International i«r Rectifier HEXFET Power MOSFET • • • • • • MñSSMSE Ü D 15115 l i b ■ INR PD-9.832 IRFI620G INTERNATIONAL R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

Contextual Info: P D - 9.1106 International H^lRectffier IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -1 Ops @125°C, VGE = 15V • Switching-loss rating includes all "tail” losses

Contextual Info: Bulletin 125160/B International Rectifier ST280CH.C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features • 500A C en ter am plifying gate ■ M e tal case with ceram ic insulator ■ International standard ca se T O -2 0 0 A B A -P U K ■ E xtended te m p erature range

thyristor dk

Contextual Info: Bulletin 125172/A International SRectifier ST303C.C s e rie s INVERTER GRADE THYRISTORS Puk Version Features • Metal case with ceramic insulator ■ International standard case TO-200AB E-PUK ■ All diffused design ■ Center amplifying gate ■ Guaranteed high dV/dt

Contextual Info: International S Rectifier Preliminary Data Sheet No. PD-6.102A IR2233 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed fo r bootstrap operation Fully operational to + 1200V Tolerant to negative transient voltage dV/dt im m une ■ G ate drive supply range from 10 to 20V

C735 transistor

Abstract: transistor c735 diode c735 diode C733 C737 transistor transistor C734
Contextual Info: International îî«r]Rectifier PD - 5.029 CPU165MU IGBT SIP MODULE Ultra-Fast IGBT Features • Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: International S Rectifier PD - 2.269A 62CNQ030 SCHOTTKY RECTIFIER 60Amp Major Ratings and Characteristics Characteristics Desciption/Features 62CNQ030 Units lp AV Rectangular waveform 60 A Vrrm 30 V Ifsm @ tp = 5ps sine 4600 A VF 0.35 V -55 to 150 °C @ 30Apk, Tj = 125°C

IRH254

Abstract: Alps 250k G-741 G741 40554 104/ 250V mf ALPS 102
Contextual Info: 11E 0 I IN TER N A TIO N A L R E C T I F I E R 4ÖS54S2 □QQci7b2 3 | Preliminary Data Sheet No. PD-9.478A T INTERNATIONAL RECTIFIER IÖ R HEX F ET TRANSISTORS IRHS54 IM-CHANIMEL s RAD HARD 250 Volt, 0.19Q, Rad Hard HEXFET International R e c tifie r's RAD HARD H E X F E T s

Contextual Info: Bulletin 125183/B International S R e c tifie r ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features • A ll d iffu s e d d e s ig n ■ C e n te r a m p lify in g g a te ■ G u a ra n te e d hig h d v /d t ■ G u a ra n te e d h ig h d i/d t ■ H ig h s u rg e c u rre n t c a p a b ility

UL1385

Abstract: diode h2z thermal d242 IRK 160 D233 D234 D235 D236 D237 D238
Contextual Info: • MäSSMSa 0Glb70fl D7fl IINR SERIES IRK.165, .166, .195, .196, .235, .236 bitemational S Rectifier DIODES NEW INT-A-pak Power Modules INTERNATIONAL b5E D rectifier Features ■ I I I I I I I I High voltage Electrically isolated base plate 3000 V RMS isolating voltage

2N2023-30

Abstract: 2N1800 JAN TRANSISTOR D1651 2N1792 2N1804 2N1805 2N1807 2N1909 2N1792 Series 2N2023
Contextual Info: S S INTERNATIONAL RECTIFIER 4855^5^"INTERNATIONAL DE | 4 A S S 4 5 5 RECTIFIER 55C 0 D G 4 ñ 2 3 CH823 Ü Data Sheet No. PD-3.082 in t e r n a t io n a l r e c t if ie r 2 N 1 7 9 2 , S N S 1 N 8 Q 5 , S S O S 3 H O A m p Major Raxings and Characteristics

1RFP240

Abstract: IRFP240 IRFP241 IRFP243 1fp2 irf 4710 IRFP 450 IRFP242 Part number 543 20 018 00 c485
Contextual Info: INTERNATIONAL RECTIFIER HE D 1 4055455 OOGfi734 Data Sheet No. PD-9.444B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IÖ R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP240 IRFP241 IRFPS42 IRFP243 N-CHANNEL Product Summary 200 Volt, 0.18 Ohm HEXFET

Contextual Info: PD-9.1010 International i »r R e ctifie r IRF740S HEXFET Power M OSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description

5d3 diode

Abstract: A/SMD 5d3 diode
Contextual Info: PD -9.1488 International l R Rectifier IRFI9634G PRELIMINARY HEXFET Power M OSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -250V R DS on = 1 -0Q

Contextual Info: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7230 ° IRHMS230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40 2, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

Contextual Info: Provisional Data Sheet PD 9.679C International I R Rectifier irhn725o dv/dt RATED HEXFET TRANSISTOR IRHN8250 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD Product Summary 200 Volt, 0.1 On, MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD technology

Contextual Info: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: — » In t0 f fi QtÎO n Q I IOR Rectifier provisional Data Sheet No. PD-9.1545 HEXFET POWER MOSFET IRFN044 N -C H A N N E L Product Summary 60 Volt, 0.040« HEXFET H E X F E T technology is the key to International Rectifier’s advanced line of power MOSFET transis­

Contextual Info: International IO R Rectifier Data Sheet No. PD-6.033E IR2132 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to + 600V Tolerant to negative transient voltage dV/dt immune ■ G ate drive supply range from 10 to 20 V