MA554 Search Results

peek 457

Abstract: 180D 00123700 HTG 7000
Contextual Info: 4855452 li OSE D g MA554S5 DODöDDfl fi | ~ 08O O8 D * 7 V ¿5.3 -< ¿ 2 3 IN TERNATI ONAL R E C T I F I E R - R34BF SERIES 1600-1400 VOLTS RANGE REVERSE RECOVERY TIME 1.25//S 480 AMP AVG HOCKEY PUK SOFT FAST RECOVERY RECTIFIER DIODES W VOLTAGE RATINGS

APPENDIX A TTL IC CONNECTION DIAGRAM

Contextual Info: MA55452BQB Dual NAND Peripheral Driver FA IR C HILD A S chlum berger C om pany MIL-STD-883 July 1986— Rev 16 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 8-Lead DIP Top View The (jA55452BQB is a dual high speed general purpose

2N7268

Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Contextual Info: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

Contextual Info: Connectors SMA Panel Mount Receptacles Solder Pot Terminal Type Straight Flange Mount Female Jack Receptacle - 4 Hole Model Number | SM A-5540-15-POT-02 | Note: Standard finish is passivated stainless steel, for gold plating change -02 suffix to -00. Straight Flange Mount Female Jack Receptacle - 2 Hole

Contextual Info: 4ÔSS452 0D1SM1E International gog Rectifier • INR PD-9.868 IRFL210 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: International ««•"« B H Rectifier_ IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4Ô55452 0017074 3b7 * I N R PD-2.312 International S Rectifier 5o w q o 9 f s o w q io f SCHOTTKY RECTIFIER 5.5 Amp Major Ratings and Characteristics V • Popular D-PAK outline • Sm al foot print, surface mountable lpsM @ tp -5 p ssin e

Contextual Info: INTERNATIONAL RECTIFIER 4Ö55452 0017370 bSE D PD-2.253 International S Rectifier i 53c m q . s e r ie s SCHOTTKY RECTIFIER 150 Amp Major Ratings and Characteristics Description/Features 153CMQ. Units Characteristics lF AV Rectangular The 153CMQ isolated, center tap Schottky rectifier module

Contextual Info: Int0 rfi Qt ÌOfi QI provisional Data Sheet No. PD-9.338D I R Rectifier JANTX2N6766 HEXFET POWER MOSFET JANTXV2N6766 [REF:MIL-PRF-19500/543] [GENERIC.IRF250] N-CHANNEL 200 Volt, 0.085Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.The effi­

Contextual Info: INTERNATIONAL RECTIFIER SI E » - 4855452 0013474 351 « I N R Data Sheet No. PD-3.178A INTERNATIONAL RECTIFIER OCT 0 3 1990 4 0 R IF , 5 0 R IF S E R IE S 63A,8QA RMS MediumPower Fast: Turn-off Thyristors Descri pti on / Featu res Major Ratings and Characteristics

irfbc40

Contextual Info: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary

Contextual Info: Bulletin 12077/A International S Rectifier SD150N/R SERIES Stud Version STANDARD RECOVERY DIODES Features • W ide current range ■ High voltage ratings up to 2500V ■ High surge cu rre n t c a p a bilitie s ■ Stud cathode and stud anode version ■ S tandard JEDEC types

THYRISTOR BST N 45 B 90

Abstract: thyristor bst m 45 90 Thyristor bst 2 HALF WAVE 45 E 57 20-C1V thyristor YS 160 004 11111I D226 diode irkt91-18 L9500 thyristor bt 3A
Contextual Info: i * fl5 5 4 5 2 International ü ^jRectifier □ O lbb'JO GOfl IIN R s e r ie s ir k . 26 , .41, .56 , .71, .91 HIGH VOLTAGE THYRISTOR/ DIODE ADD-A-pak Power Modules and THYRISTOR/ THYRISTOR Features IN T E R N A T IO N A L R E C T IF IE R • ■ E le c tric a lly iso lated b a s e plate

Contextual Info: International Iö R Rectifier Data Sheet No. PD-6.017D IR2125 CURRENT LIMITING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 12 to 18V

Contextual Info: International S Rectifier PD - 2.269A 62CNQ030 SCHOTTKY RECTIFIER 60Amp Major Ratings and Characteristics Characteristics Desciption/Features 62CNQ030 Units lp AV Rectangular waveform 60 A Vrrm 30 V Ifsm @ tp = 5ps sine 4600 A VF 0.35 V -55 to 150 °C @ 30Apk, Tj = 125°C

IR8200B

Contextual Info: INTERNATIONAL RECTIFIER b5E D • 4ß55452 QQlfllbS 413 ■ INR Data Sheet No. PD-6.012A INTERNATIONA!. RECTIFIER I O R IR8200B 3A, 5 5 V DMOS H-BRIDGE POWER INTEGRATED CIRCUIT 11-PIN MOLDED SIP General Description Features The IR8200B is a 3A H-Bridge designed for motion

IRH254

Abstract: Alps 250k G-741 G741 40554 104/ 250V mf ALPS 102
Contextual Info: 11E 0 I IN TER N A TIO N A L R E C T I F I E R 4ÖS54S2 □QQci7b2 3 | Preliminary Data Sheet No. PD-9.478A T INTERNATIONAL RECTIFIER IÖ R HEX F ET TRANSISTORS IRHS54 IM-CHANIMEL s RAD HARD 250 Volt, 0.19Q, Rad Hard HEXFET International R e c tifie r's RAD HARD H E X F E T s

International Rectifier 16f series

Contextual Info: Bulletin 120204 International S Rectifier 16F R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 16 A High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM

MOSFET J132

Abstract: J132 MOSFET J133 mosfet transistor G524 IRFJ132 T0-213AA J133 mosfet IRFJ130 j132 mosfet j133
Contextual Info: H E D | 4 Û SS4 S2 □ □□ci544 4 | Data Sheet No. PD-9.398A INTERNATIONAL R E C T I F I E R T-3 9 -11 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS N -C H A N N E L P O W E R I O R IRFJ130 IRFJ131 f \ 1— 4 \ IRFJ132 M O S F E T s IRFJ133 100 Volt, 0.18 Ohm HEXFET

Contextual Info: International í«? Rectifier PD-9.967C IRGKI165F06 “CHOPPER" IGBTINT-A-PAK Fast Speed IGBT Vce=600V • Rugged Design • Simple gate-drive • Fast operation up to 10K H z hard switching, or 50 K H z resonant • Switching-Loss Rating includes all "tail"

IRF1010S

Abstract: AIT smd
Contextual Info: MÖ55HS2 GG14Ö00 International k Rectifier =163 • IN R PD-9.923 IRF1010S INTERNATIONAL HEXFET® Power M O SFET RECTIFIER Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated

C828 transistors

Abstract: c828 tr c828 tr c828 c829 c829 tr c829 c828 02 diode c829 c826 C825 diode
Contextual Info: International ^Rectifier PD-9.955B IRGTI115U06 Ultra-fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK V ce = 600V • Rugged Design •Simple gate-drive • Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: MflSSMS2 0015332 330 M I N R International lj«R Rectifier _ IRL510S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • rU'y'yU Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive

Contextual Info: E?R R ectifie PD-9.3261 4A554S2 D014baD 3fl4 H I N R International INTERNATIONAL RECTIFIER E5E ]> IR F610 HEXFET P o w e r M O S F E T • • • • • Dynam ic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirem ents