IRHN8250 Search Results

IRHN8250

Abstract: IRHN7250
Contextual Info: Provisional Data Sheet PD 9.679C IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.10Ω International Rectifier’s MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent

IRHN8250

Abstract: JANSR2N7269U IRHN3250 IRHN4250 IRHN7250
Contextual Info: PD - 90679F IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si)

2N7269U

Abstract: IRHN7250 IRHN8250 JANSH2N7269U JANSR2N7269U
Contextual Info: PD - 90679E IRHN7250 IRHN8250 JANSR2N7269U JANSH2N7269U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR 200Volt, 0.100Ω Ω, MEGA RAD Hard REF:MIL-PRF-19500/603 N CHANNEL MEGA RAD HardTM TM HEXFET® Inter national Rectifier’s RAD Hard technology

Contextual Info: Provisional Data Sheet PD 9.679C International I R Rectifier irhn725o dv/dt RATED HEXFET TRANSISTOR IRHN8250 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD Product Summary 200 Volt, 0.1 On, MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD technology

Contextual Info: PD - 90679D IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 200Volt, 0.100Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total

IRHN3250

Abstract: IRHN4250 IRHN7250 IRHN8250 JANSR2N7269U
Contextual Info: PD - 90679G IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si)

Contextual Info: PD - 90679G IRHN7250 JANSR2N7269U 200V, N-CHANNEL REF:MIL-PRF-19500/603 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7250 IRHN3250 IRHN4250 IRHN8250 Radiation Level 100K Rads (Si) 300K Rads (Si)

F347

Abstract: IRHN7250 IRHN8250
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet PD 9.679C IRHN7250 IRHN8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.10Ω International Rectifier’s MEGA RAD HARD technology

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

IRHC7110

Abstract: IRHC7130 IRHC7150 D47 MOSFET
Contextual Info: International [^Rectifier Government/ Space Products Radiation Hard HEXFETs N-Channel Part Number Vqs Drain Source Voltage Volts Resistance (Ohms) Ip Continuous Drain Current 25°C Case (Amps) •DM Pu'*« Drain Current (Amps) IRHN7150 IRHN8150 IRHN7250

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

JANSR2N7261

Contextual Info: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110

Contextual Info: Government and Space Products International IO R Rectifier • d Part Number Tc=2S°C RDS on b VD$S (A) (V) T f=100°C (A) Total Dose Rating Rads (Si) p @ Ic = 25°C (W) HEXFET ® Power MOSFETs Fax Case on Demand Outline Key Number R a d ia tio n H a rd e n e d

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

IRHE7110

Abstract: IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHN7054 IRHN7130 1RHF8130
Contextual Info: 4flss4s2 DQlblbb 2Û4 - From ,R HEXFET Paît Number bvdss V RDS(on) (OHMS) RAD HARD id @ Tq = 25°C •d @ Tc = 100”C RthJC Max. Pd @ Tc = 25-C (A) (A) (K/W) (W) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110 100 0.60 3.1 2.0 11 11 22 IRHE7130 100 0.18 8.0 5.0

Contextual Info: INTE RNATIONAL RECTIFIER 2bE D • HflSSMSS OülOlfi? Q ■ Government/ Space Products T-39-ôl International ^¡Rectifier Radiation Hard HEXFETs N-Channel V d s Drain Part Number Source Voltage Volts On-sitata Resistance (Ohms) IRHN7150 IRHN8150 IRHN7250

Contextual Info: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _

H-312

Contextual Info: Data Sheet No. PD-9.679B INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHIM7250 IRHN8S50 N-CHANNEL MEGA RAD HARD 200 Volt, 0.10», MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability