IRFP242 Search Results

Contextual Info: • 4302271 0054115 132 ■ g H a r r is HAS IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Features Package T O -2 4 7 TOP VIEW • 18A and 20A, 200V - 150V • rDS on) - 0.1 80 and 0.220 DRAIN (TAB) • Single Pulse Avalanche Energy Rated

IRFP240

Abstract: Harris Semiconductor irfp240 TA17422 irfp243 harris transistors IRFP241
Contextual Info: IRFP240, IRFP241, IRFP242, IRFP243 S E M I C O N D U C T O R 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRFP240R

Abstract: IRFP242R IRFP243R IRFP240 irfp240 circuit diagram irfp IRFP241R 1rfp
Contextual Info: Rugged Power M O IRFP240R, IRFP241R IRFP242R, IRFP243R File Number 2087 Avalanche Energy Rated N-Channel Power MOSFETs 16A and 18A, 200V , 150V rDs on = 0 .1 8 0 and 0.22Q N-CHANNEL ENHANCEMENT MODE

irfp240

Abstract: IRFP242 IRFP243 Harris Semiconductor irfp240 Mosfet irfp240
Contextual Info: H a IRFP240, IRFP241, IRFP242, IRFP243 r r i s ” “ I CONDUCTOE 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 18A and 20A, 200V and 150V • High Input Im pedance These are N-Channel enhancement mode silicon gate

IRFP240R

Abstract: 4490 mosfet mosfet irfp 250 N 3fv 60
Contextual Info: m H a r r is IRFP240R, IRFP241R IRFP242R, IRFP243R N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 F e a tu re s Package T O -2 4 7 • 18A and 20A , 2 0 0 V - 150V TOP VIEW • ro s o n = 0 .1 8 0 and 0 .2 2 0 DRAIN (TAB) • Single Pulse A valanche Energy Rated

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

IRFP040

Abstract: IRFP141 IRFP142 IRFP143 IRF9613 irfp245 IRF9620 IRF9632 IRF9643
Contextual Info: HEXFET Power MOSFETs International S Rectifier Plastic Insertable Package TO-220 P-Channel s Drain Source Voltage Volts Vq Part Number RDS(on) On-Siate Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) 'D M Pu'*« Drain Current (Amps) P q Max

IRF9610

Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540

1rfp240

Abstract: 1RFP340 1RFP360 IRFP310 IRFP232 1rfp254 IRFP240 IRFP141 IRFP321 IRFP151
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V ) fë 1 (T a= 2 5 °C ) Id Pd * /CH * /CH (A ) (W) Ig ss (n A ) Vg s I d ss Vg s (V ) th ) m in max (V ) (V ) ma) (V ) (n A ) fè F D s (o n ) Vd s = Vg s Id Vd s ( ft % g fs Io (o n ) C is s Coss C rss

IRF150 To220 package

Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
Contextual Info: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

1RFP240

Abstract: IRFP240 IRFP241 IRFP243 1fp2 irf 4710 IRFP 450 IRFP242 Part number 543 20 018 00 c485
Contextual Info: INTERNATIONAL RECTIFIER HE D 1 4055455 OOGfi734 Data Sheet No. PD-9.444B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IÖ R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP240 IRFP241 IRFPS42 IRFP243 N-CHANNEL Product Summary 200 Volt, 0.18 Ohm HEXFET

1RFP240

Abstract: IRFP310 T03P IRFP243 irfp250 irfp320 IRFP232 IRFP323 n4001 IRFP242
Contextual Info: - l À È f g gj £ 4t Vd s or € % Vd g % V Vg s (V) W. (Ta=25*C) Id Pd * /CH * /CH (A) (W) Ig s s Vg s th) Id s s min (nA) Vg s (V) <M) Vd s (V) (V) W Id (nA) ¡fê Ds(on) Vd s = Vg s max (V) m fë Io(on) g fs Ciss Coss Crss (*typ) (max) (pF) (*typ) (max)

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

SSH60N06

Abstract: IRFP141 IRFP142 IRFP143 Irfp250 irfp254 IRFP230 IRFP242 IRFP130 IRFP333 SSH40N15A
Contextual Info: POWER MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL BVdss V ID(onXA) RDS(onXG) Part Number 60.00 60.00 60.00 0.03 0.025 SSH60N06 SSH60N06A 80.00 12.00 14.00 25.00 28.00 34.00 40.00 0.23 0.16 0.10 0.077 0.080 0.055 IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151

IRFP240

Abstract: IRF640 SAMSUNG
Contextual Info: b4E D SAMSUNG ELECTRONICS INC • IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 OG121TI ÖTS «SMfiK N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds ON • Improved inductive ruggedness • • • • • F a s t sw itch in g tim e s R u g g ed p o lysilico n g a te ce ll s tru ctu re

IRF740 "direct replacement"

Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­ ment Inter­ national Rectifier SAMSUNG Direct Replace­

irf640

Abstract: irfp240 for irf640 irfp242 IRF640 n-channel MOSFET IRFP243 Diode c 642 IR 643 power MOSFET IRF640 Mosfet irfp240
Contextual Info: N-CHANNEL POWER MOSFETS IRF640/641/642/643 IRFP240/241/242/243 FEATURES • • • • • • • Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate ceil structure Lower input capacitance Extended safe operating area

power 22D

Abstract: irf64d IRF740 IRFP240 IRFP450 bridge IRF350 IRF120 IRF122 IRF123 IRF130
Contextual Info: FRED ERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M FCI A CORTON COM PANY C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232 IRF233