IRF120 Search Results

irf121

Abstract: IRF120 IRF123
Contextual Info: iH A R R is IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs O cto be r 1997 Features Description • 8.0A and 9.2A, 80V and 100V • High Input Im pedance T h e se are N -C hannel e n h a n ce m e n t m ode silicon gate

IRF1205

Abstract: irf120
Contextual Info: PD - 93803 IRF1205 PROVISIONAL HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175 °C Operating Temprature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.027Ω G Description ID = 41A… S Fifth Generation MOSFETs from International Rectifier

SFN106A3

Abstract: IRF120 T-39
Contextual Info: 8368602 SOL ITRON DEVICES INCH'D DE | û 3 h ô b D S 0001171 0 J ~ T-39~ H SW ITCHM OS SFM06A3 POWER MOS DEVICE 100V / 8A N Channel, TO-3 Package, IRF120 Equivalent FEATURES • • • • • • Excellent temperature stability • Ease of paralleling

1000 volt mosfet

Abstract: mosfet gate source voltage 20v SHD230202
Contextual Info: SENSITRON SEMICONDUCTOR SHD230202 TECHNICAL DATA DATA SHEET 319, REV. A HERMETIC POWER MOSFET N-CHANNEL QUAD FEATURES: œ 100 Volt, 0.35 Ohm, 6.2A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF120 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

SHD230202

Abstract: IRF120 SHD2302
Contextual Info: SENSITRON SEMICONDUCTOR SHD230202 TECHNICAL DATA DATA SHEET 319, REV. A HERMETIC POWER MOSFET N-CHANNEL QUAD FEATURES: œ 100 Volt, 0.35 Ohm, 6.2A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF120 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

IRF150 To220 package

Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
Contextual Info: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232

IRF520

Abstract: IRF120 10n10 circuit diagram irf520 mtp10n10 irf5205 MTP10N08 IRF121 IRF122 IRF123
Contextual Info: — = = ^ - = fl4 D Ë f â 4b*11,74 Q0E?aS 4 □ 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 7 85 4 D IRF120-123/IRF520-523 MTP10N08/10N10 N-Channel Power M O SFET s, 11 A, 60-100 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description

OA 207 B diode

Abstract: IRF120 IRFI20 dioda 30 Ampere irf121 IRF122 IRF123 IRFt20
Contextual Info: 3875081 G E SOLID _STATE_~üï DE 3A7S0Ö1 DDlflEb4 □ f o T~ 3 J - // - Standard PowerMOSFETs IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors

IRF120

Abstract: irf122 irf123
Contextual Info: IRF120, IRF121, IRF122, IRF123 S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF123

Abstract: IRF120 IRF1 CQ 1565 RT irf121 IRF122 RF123 IRF1Z0
Contextual Info: Standard Power MOSFETs- IRF120, IRF121, IRF122, IRF123 File Number 1565 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-C HANNEL EN HANCEM ENT MODE 7.0A and 8.0A, 60V-100V

Contextual Info: IRF120, IRF121 IRF122, IRF 123 31 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Package Features T 0 -2 0 4 A A • 8.0A and 9.2A , 8 0 V - 100V BOTTOM VIEW • rD S on = 0 .2 7 f l and 0 .3 6 0 SOURCE • S O A is P ow er-D issip atio n Limited

Contextual Info: IRF120, IRF121, IRF122, IRF123 HARRIS S E M I C O N D U C T O R 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Description Features 8.0A and 9.2A, 80V and 100V Majority Carrier Device These are N-Channel enhancement mode silicon gate

ED 83

Contextual Info: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)

IRF120

Abstract: irf121 IRF122 IRF123 TB334
Contextual Info: IRF120, IRF121, IRF122, IRF123 Semiconductor 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs October 1997 Features Description • 8.0A and 9.2A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IRF120

Abstract: IRF122
Contextual Info: HE D I Data Sheet No. PD-9.312H 40 55452 □001 04 2 2 | T - 3 f - n INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IR F 1 2 0 IR F 1 2 1

MTM40N20

Abstract: MTM8N18 MTM45N12 MTM45N15 MTM40N18 IRF233 MTM8N10 MTM20N10 IRF240 IRF252
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•Tc = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15

irf9110

Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB

BUZ171

Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
Contextual Info: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0

2N6155

Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS

SOT-123

Abstract: IRF9110 PHILIPS TO220 blf544b BLF246 BLF348 irc224 IRC350 IRC530 IRC832
Contextual Info: - % % A f ft i Vd s or Vd g tt £ i T Vg s Ta=25'C) «É. Ig s s Id Pd * /C H * /CH (W) Vds (V) Id (nA) g fs Io(on) C ís s Coss ft B m ♦typ Vg s (V) (0) Id (A) * ty p (A) Vg s (V) *typ (S) Id (max) (max) (max) % (A) (pF) (pF) (pF) Vd s (V) % (V) P '200 ± 2 0

BUZ171

Abstract: 8UZ11 SILICONIX t02G BUZ10 BUP67 BUP68 BUP69 BUP70 BUP71
Contextual Info: - 318 - f * A Vd s m £ tt ft Vg s %l ts Ta=25*C Id Pd Vg s (th) Id s s I g ss or € % m 4# tos(on) Vp:>= 14 (Ta=25<C ) Ip(on) Ciss g fs Coss Vd g * /CH * /CH (V) (A) (IV) V g s =0 (max) max min (nA) 500 ± 4 0 ±4 . 47 100 ±100 ±30 1000 500 3 6 1 2 10

1RF820

Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220