IRF1 Search Results

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

Contextual Info: PD - 96040 AUTOMOTIVE MOSFET IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

IRF1104

Contextual Info: PD- 9.1724A IRF1104 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 40V RDS on = 0.009Ω G ID = 100A… S Description

AN-994

Abstract: IRF1404 IRF1404L IRF1404S IRF530S
Contextual Info: PD -93853C IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l D l VDSS = 40V RDS on = 0.004Ω G The D2Pak is a surface mount power package capable of

IRF1405L

Abstract: IRF1405S
Contextual Info: PD -93992 IRF1405S IRF1405L AUTOMOTIVE MOSFET Typical Applications ● ● ● ● ● Benefits ● ● ● ● ● ● HEXFET Power MOSFET Electric Power Steering EPS Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Advanced Process Technology

IRF140

Abstract: irf140 ir IRF1401
Contextual Info: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF1310N

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 91504A IRF1310N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

Irf 1540 N

Abstract: Irf 1540 G IRF1404 MOSFET IRF 1540 93853b 60AA AN-994 IRF1404L IRF1404S Gate Driver of IRF1404
Contextual Info: PD -93853B IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description ® l D l VDSS = 40V RDS on = 0.004Ω G The D2Pak is a surface mount power package capable of

AN-994

Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
Contextual Info: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V

Mosfet 100V 50A

Abstract: irf10n40
Contextual Info: IRF10N40 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this

Contextual Info: PD - 97206A AUTOMOTIVE MOSFET IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

SHD217302

Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

IRF1302L

Abstract: IRF1302S
Contextual Info: PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● ● ● ● ● ● HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Alternator regulator

Abstract: irf1407 DIODE marking 78A 60v 10KHz ir MOSFET
Contextual Info: PD - 93907 IRF1407 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications ● ● Integrated Starter Alternator 42 Volts Automotive Electrical Systems D VDSS = 75V Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating

irf121

Abstract: IRF120 IRF123
Contextual Info: iH A R R is IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs O cto be r 1997 Features Description • 8.0A and 9.2A, 80V and 100V • High Input Im pedance T h e se are N -C hannel e n h a n ce m e n t m ode silicon gate

Contextual Info: PD - 9.1372A International IQ R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF101ONS • Low-profile through-hole(IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

IRF1401

Abstract: IRF140 IRF141
Contextual Info: IRF140.141 P86EL2.K2 FU? FIELD EFFECT POWER TRANSISTOR 27 AMPERES 100, 60 VOLTS Rd S ON = 0-085 n N-CHANNEL This series of N -C h annel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRf 48 MOSFET

Abstract: MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A IRF133
Contextual Info: - Standard Power M O SFET s File N u m b e r IRF130, IRF131, IRF132, IRF133 1566 Power M O S Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors

D86DL2

Abstract: IRF130 CPD75
Contextual Info: IRF130,131 P86DL2,K2 [jSSMlMiCS FEF RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 14.0 AMPERES

IRF140R

Abstract: IRF141R IRF142R IRF143R
Contextual Info: .Rugged Power MOSFETs File Number 2001 IRF140R, IRF141R IRF142R, IRF143R Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0.085fl and 0.110 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited

Contextual Info: PD- 9.1724A International IQ R Rectifier IRF1104 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 40 V

IRF1010E

Contextual Info: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier

IRF200

Abstract: IRF100 20 k ohm 400W resistor irf500 IRN100S IRF150-IRF500 IRF400 IRF150 IRF50 IRF300
Contextual Info: POWER SOLUTION - NIKKOHM 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED IRN50-IRN150 IRF150-IRF500 Features and Applications Non-inductive, flat shaped aluminum housed wire wound fixed resistors with 50W to 500W. Minimum resistance of 1ohm, +/-0.5% tolerance available.

AN-994

Abstract: IRF1010N IRF1010NS IRF530S
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1372 IRF1010NS PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.012Ω