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    IRF1010E Search Results

    IRF1010E Datasheets (37)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF1010E
    International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF1010E with Standard Packaging Original PDF 206.74KB 9
    IRF1010E
    International Rectifier HEXFET Power MOSFET Original PDF 168.91KB 8
    IRF1010E
    International Rectifier HEXFET Power MOSFET Original PDF 202.54KB 8
    IRF1010E
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF1010E
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 81A, Pkg Style TO-220AB Scan PDF 50.01KB 1
    IRF1010EL
    International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging Original PDF 126.95KB 11
    IRF1010EL
    International Rectifier HEXFET Power MOSFET Original PDF 209.85KB 10
    IRF1010EL
    International Rectifier HEXFET Power MOSFET Original PDF 123.88KB 10
    IRF1010EL
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF1010ELPBF
    International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1010EL with Lead Free Packaging Original PDF 126.95KB 11
    IRF1010ELPBF
    International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-262 Original PDF 220.23KB 10
    IRF1010EPBF
    International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010E with Lead-Free Packaging. Original PDF 206.74KB 9
    IRF1010EPBF
    International Rectifier TRANS MOSFET N-CH 60V 84A 3TO-220AB Original PDF 180.02KB 8
    IRF1010ES
    International Rectifier HEXFET Power Mosfet Original PDF 123.87KB 10
    IRF1010ES
    International Rectifier HEXFET Power Mosfet Original PDF 209.84KB 10
    IRF1010ES
    International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF1010ES with Standard Packaging Original PDF 126.95KB 11
    IRF1010ES
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRF1010ESL
    International Rectifier HEXFET Power Mosfet Original PDF 209.84KB 10
    IRF1010ESPBF
    International Rectifier TRANS MOSFET N-CH 60V 84A 3D2-PAK Original PDF 220.23KB 10
    IRF1010ESPBF
    International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF1010ES with Lead Free Packaging Original PDF 126.95KB 11
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    IRF1010E Price and Stock

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    Infineon Technologies AG IRF1010EZPBF

    MOSFET N-CH 60V 75A TO220AB
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    DigiKey IRF1010EZPBF Tube 4,565 1
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    Rochester Electronics LLC AUIRF1010EZ

    AUTOMOTIVE HEXFET N CHANNEL
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    DigiKey AUIRF1010EZ Bulk 617 195
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    Rochester Electronics LLC AUIRF1010EZS

    AUIRF1010 - 55V-60V N-CHANNEL AU
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    Infineon Technologies AG IRF1010EPBF

    MOSFET N-CH 60V 84A TO220AB
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    DigiKey IRF1010EPBF Tube 358 1
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    Avnet Americas () IRF1010EPBF Tube 865 18 Weeks 50
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    Mouser Electronics IRF1010EPBF 1,655
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    Verical () IRF1010EPBF 7,669 16
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    Infineon Technologies AG IRF1010EZ

    MOSFET N-CH 60V 75A TO220AB
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    DigiKey IRF1010EZ Tube 250
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    IRF1010E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
    Contextual Info: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V


    Original
    IRF1010ES) IRF1010EL) IRF1010ESPbF IRF1010ELPbF EIA-418. AN-994 IRF1010EL IRF1010ES IRF530S IRF1010ELPBF PDF

    IRF1010E

    Contextual Info: P D -9 .1 6 7 0 B International I R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 60 V R ü S o n = 0.0120 . ID = 81 A © Description Fifth G e n e ratio n H E X F E T s from International Rectifier


    OCR Scan
    IRF1010E IRF1010E PDF

    Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRF1010E O-220 PDF

    Contextual Info: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


    Original
    IRF1010EPbF O-220 fo20AB PDF

    IRF1010E

    Abstract: *f1010e
    Contextual Info: P D - 9 .1670A International IGR Rectifier IRF1010E H E X FE T Pow er M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss - 6 0 V f^DS on = 0 . 0 1 2 0 lD = 81 A®


    OCR Scan
    IRF1010E O-220 IRF1010E *f1010e PDF

    irf1010e

    Abstract: irf1010e equivalent *f1010e
    Contextual Info: PD - 9.1670B IRF1010E HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 0.012Ω G ID = 81A… S Description Fifth Generation HEXFETs from International Rectifier


    Original
    1670B IRF1010E O-220 irf1010e irf1010e equivalent *f1010e PDF

    51a marking

    Abstract: IRF1010EZS AN-994 IRF1010EZ IRF1010EZL
    Contextual Info: PD - 94724B IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original
    94724B IRF1010EZ IRF1010EZS IRF1010EZL O-220AB 51a marking IRF1010EZS AN-994 IRF1010EZ IRF1010EZL PDF

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original
    O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES *f1010e
    Contextual Info: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


    Original
    IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES *f1010e PDF

    IRF1010E

    Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRF1010E O-220 O-220AB IRF1010E PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES
    Contextual Info: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description


    Original
    IRF1010ES IRF1010EL IRF1010ES) IRF1010EL) AN-994 IRF1010EL IRF1010ES PDF

    IRF1010E

    Abstract: IOR 1010
    Contextual Info: International lö R Rectifier P D - 9 .1 6 7 0 IRF1010E PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss f^DS on = 60 V = 0.01 2Q. ID = 81 A Description


    OCR Scan
    IRF1010E IRF1010E IOR 1010 PDF

    Contextual Info: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


    Original
    94965B IRF1010EPbF O-220 PDF

    IRF1010E

    Abstract: *f1010e T0-262 EIA marking code RV surface mount diode
    Contextual Info: PD- 9.1720 In te rn a tio n a l I ö R Rectifier IR F 1 0 1 0 E S /L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRF101OES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated


    OCR Scan
    IRF101OES) IRF1010EL) IRF1010E *f1010e T0-262 EIA marking code RV surface mount diode PDF

    Contextual Info: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


    Original
    94965B IRF1010EPbF O-220 PDF

    Contextual Info: PD - 94724 IRF1010EZ AUTOMOTIVE MOSFET HEXFET Power MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 60V RDS on = 8.5mΩ


    Original
    IRF1010EZ O-220AB IRF1010 PDF

    AN-994

    Abstract: IRF1010EZ IRF1010EZL IRF1010EZS
    Contextual Info: PD - 95483 AUTOMOTIVE MOSFET Features O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax O Lead-Free O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF


    Original
    IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF EIA-418. O-220AB AN-994 IRF1010EZ IRF1010EZL IRF1010EZS PDF

    AN-994

    Abstract: IRF1010EL IRF1010ES IRF530S
    Contextual Info: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V


    Original
    IRF1010ES) IRF1010EL) IRF1010ESPbF IRF1010ELPbF EIA-418. AN-994 IRF1010EL IRF1010ES IRF530S PDF

    Contextual Info: P D - 9 .1 7 2 0 International IQ R Rectifier IR F 1 0 1 0 E S /L HEXFET^ Power MOSFET Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 6 0 V


    OCR Scan
    IRF1010ES) IRF1010EL) PDF

    *f1010e

    Abstract: IRF1010E IRF 315
    Contextual Info: PD - 9.1670A International IO R Rectifier IRF1010E HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = R ü S o n = Id 60V 0.012Í2 = 81 A(D Description Fifth G e n e ratio n H E X F E T s from International R ectifier


    OCR Scan
    IRF1010E *f1010e IRF1010E IRF 315 PDF

    Contextual Info: IRF1010E l l l l l l TO-220AB Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Power MOSFET The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation


    Original
    IRF1010E O-220AB O-220 PDF

    AN-994

    Abstract: IRF1010EZ IRF1010EZL IRF1010EZS 9472
    Contextual Info: PD - 94724C IRF1010EZ IRF1010EZS IRF1010EZL AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original
    94724C IRF1010EZ IRF1010EZS IRF1010EZL O-220AB AN-994 IRF1010EZ IRF1010EZL IRF1010EZS 9472 PDF

    IRF1010EL

    Abstract: ISD 1720 mosfet k 61 y1 AN-994 IRF1010E IRF1010ES
    Contextual Info: PD - 9.1720 IRF1010ES/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS(on) = 0.012Ω G ID = 83A†


    Original
    IRF1010ES/L IRF1010ES) IRF1010EL) IRF1010EL ISD 1720 mosfet k 61 y1 AN-994 IRF1010E IRF1010ES PDF

    *f1010e

    Abstract: irf1010e equivalent IRF1010E
    Contextual Info: PD - 91670 IRF1010E HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    IRF1010E O-220 *f1010e irf1010e equivalent IRF1010E PDF