IRF450 Search Results

Contextual Info: mi = ^ = llll IRF450 SEME LAB MECHANICAL DATA D im ensions in m m inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40(1.197) 30.15(1.187) 17.15 (0.675)_ 16.64 (0.655) 500V V DSS ^D(cont) _ * 0 ? (0.161) 3.84 (0 .Ï5 Ï) dia. 2 pics. -JL o o a ; 2- •—

IRF449

Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 25 2 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF450 transistor

Abstract: irf450 mosfet 452 IRF452 mosfet IRF450
Contextual Info: MOTOROLA SEMICONDUCTOR IRF450 IRF451 IRF452 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V d SS rDS on >D IRF450 500 V 0.4 n 13 A IRF451 450 V 0.4 n 13 A IRF452 500 V 0.5 n 12 A T h e s e T M O S P o w e r FETs are d es igne d fo r high v o ltag e, high

Contextual Info: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

1RF620

Abstract: 1RF530 1rf521 1rf630 IRF449 RF543 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF450A

Abstract: IRF450R IRF452R IRF 450 MOSFET I300 IRF451R IRF453R
Contextual Info: Rugged Power MOSFETs_ IRF450R, IRF451R, IRF452R, IRF453R File Number 2008 Avalanche Energy Rated N-Channel Power MOSFETs N -C H A N N E L E N H A N C E M E N T M O D E 12A and 13A, 450V-500V rDs on = 0.4Q and 0.50 D Feature*: • Single pulse avalanche energy rated

Contextual Info: N-CHANNEL POWER MOSFET IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage

IRF452

Abstract: IRF453 IRF451 irf450
Contextual Info: IRF450, IRF451, IRF452, IRF453 S E M I C O N D U C T O R 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

350w schematic diagram motor control

Abstract: IRF450
Contextual Info: 3QE 7 f Z D • T'ïE'iEB? GDSTTbl 2 ■ ' T ' - ' 3 CH 3 S G S -T H O M S O N IR F 4 5 0 - 4 5 1 ti^D g^(Q [iL[l ir^©lD©i_ IR F 4 5 2 - 4 5 3 S: G S-THOMSÔN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS ^DS(on) Id IRF450 500 V

IRF450

Abstract: TA17435 mosfet IRF450 TB334
Contextual Info: IRF450 Data Sheet March 1999 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 13A, 500V Formerly developmental type TA17435. Ordering Information IRF450 PACKAGE TO-204AA 1827.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRF360

Abstract: irf362 IRF448 IRF449 IRF352 IRF353 IRF421 IRF430 IRF433 IRF441
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF411

Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421
Contextual Info: - 252 - Mi m *± « % Vds Vg s or * Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR

IRF449

Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
Contextual Info: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452

IRF450

Abstract: mosfet IRF450 mosfet n channel
Contextual Info: TECHNICAL DATA POWER MOSFET N CHANNEL Devices 13 AMPERE 500 VOLTS 0.4 Ω IRF450 • • • • REPETITIVE AVALANCHE RATINGS LOW RDS ON LOW DRIVE REQUIREMENT DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters / Test Conditions

IRF452

Abstract: IRF450 IRF451 irf453
Contextual Info: h a f r r is IRF450, IRF451, IRF452, IRF453 11A and 13A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 11A and 13A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF450

Abstract: SHD218505
Contextual Info: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 500 Volt, 0.3 Ohm, 9.0A MOSFET • Low RDS on • Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.

RF432

Abstract: IRF449 IRF460 IRFac32
Contextual Info: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32

Contextual Info: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International

Contextual Info: IRF450R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D)8.1 @Temp (øC)100 IDM Max (@25øC Amb)52 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

Contextual Info: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International

IRF450 equivalent

Contextual Info: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

IRF450

Abstract: IRF450 transistor
Contextual Info: IRF450.451 P86FR2,R1 IFSMm-öffiS FUT 13 AMPERES 500, 450 VOLTS RDS(ON = 0.4 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

JANTX2N6770

Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
Contextual Info: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International

irfp450

Abstract: irf450 mosfet 452 mosfet IRF450 ir 451 451 MOSFET tr irfp450 irfp450 ir irfp450 mosfet irf450 switching
Contextual Info: IRFP450/451/452/453 IRF450/451/452/453 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area