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    PN channel MOSFET 10A

    Abstract: 1S71 1S74 C035 STD20N06 TJ50D NMOS depletion pspice model diode 935 lg
    Text: nsec N MOSFET Symbol Parameter Value Unit L Channel Length 1 jiMeter W Channel Width 1 HMeter , SGS-THOMSON IRfflfl(S^©lilLi@iriHi®GIOD©S STD20N06 N- CHANNEL ENHANCEMENT MODE "ULTRA HIGH , ) Static Drain-source On Resistance Vgs = 10V Id =10 A Vgs = 10V Id= 10A Tc=100°C 0.026 0.03 0.06 Q Q là , Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time Vdd = 30 V Id= 10A Rg = 50 fi , < Tjmax Safe Operating Area Thermal Impedance 10"1 10 ° to' 102 vw(v) -Gi 10"5 10"* 10~J 10-2 1CT1 tp


    OCR Scan     		PDF STD20N06 STD20N06 O-251) O-252) O-251 O-252 0068771-E 0068772-B PN channel MOSFET 10A 1S71 1S74 C035 TJ50D NMOS depletion pspice model diode 935 lg

    2015 - Not Available

    Abstract: No abstract text available
    Text: current range. A normal PN junction diode comes with a higher ‘Vf’, hence it is a common practice to , stability close to that of a PN junction diode. Figure 2 compares the leakage profile over temperature and , Incorporated 2015 AN1099 Introduction (cont.) Using MOSFETS as ideal diodes: In this solution, a MOSFET is controlled to conduct in only one direction. With the proper polarity of the battery, the MOSFET , ) is the on resistance of the MOSFET , and I load is the load current. This solution can be realized


    Original     		PDF AN1099

    2005 - 4910n

    Abstract: PN channel MOSFET 10A
    Text: Channel 1/2 Source Channel 1/2 Gate Channel 1/2 Drain SO-8 Ordering information A X Feature F : MOSFET PN 4910N X X X Package S: SO-8 Lead Free Blank : Normal L : Lead Free Package Packing Blank : Tube , AF4910N N-Channel Enhancement Mode Power MOSFET Features - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package General Description The advanced power MOSFET provides the designer , 18, 2005 1/5 AF4910N N-Channel Enhancement Mode Power MOSFET Absolute Maximum Ratings Symbol


    Original     		PDF AF4910N 4910N PN channel MOSFET 10A

    PN channel MOSFET 10A

    Abstract: 4910N AF4910N
    Text: S1/2 G1/2 D1/2 D1 S2 Pin Name D1 Channel 1/2 Source Channel 1/2 Gate Channel 1/2 Drain D2 SOP-8 Ordering information A X Feature F : MOSFET 4910N X X X PN Package , AF4910N N-Channel Enhancement Mode Power MOSFET General Description Features The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device , On-resistance - Dual N MOSFET Package Product Summary BVDSS (V) 30 RDS(ON) (m) 14 ID (A) 10 Pin


    Original     		PDF AF4910N 4910N 015x45 PN channel MOSFET 10A AF4910N

    2005 - PN channel MOSFET 10A

    Abstract: UK2996L-TA3-T C5520 UK2996 UK2996-TA3-T UK2996-TF3-T n-CHANNEL POWER MOSFET 600v MOSFET 25A 600V
    Text: UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET 1 , UK2996 MOSFET ABSOLUTE MAXIMUM RATING PARAMETER Drain to Source Voltage Continuous Drain Current , Resistance, Channel to Ambient Thermal Resistance, Channel to Case SYMBOL JA JC RATINGS 62.5 2.78 , QG 38 Total Gate Charge 13 pF 140 ID = 10A , VDD 400V, VGS = 10V Gate-Source , TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-063 ,A UK2996 MOSFET SOURCE-DRAIN DIODE


    Original     		PDF UK2996 O-220 UK2996 O-220F UK2996L UK2996-TA3-T UK2996L-TA3-T UK2996-TF3-T UK2996L-TF3-T QW-R502-063 PN channel MOSFET 10A UK2996L-TA3-T C5520 UK2996-TA3-T UK2996-TF3-T n-CHANNEL POWER MOSFET 600v MOSFET 25A 600V

    FS7UM-5

    Abstract: 080II
    Text: td(off) tf "tr ld( pn ) 2 3 5 7 10 ° 2 3 5 , lu £ < er o 101 7 5 3 2 10 ° 7 10-1 ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 1 1 - VGS , -50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) lu O < O < ce 101 7 5 3 2 10 ° 7 5 3 2 10-1 7 5 3 2 , MITSUBISHI Neh POWER MOSFET FS7UM-5 HIGH-SPEED SWITCHING USE FS7UM-5 Vdss , dissipation 75 W Tch Channel temperature -55 ~+150 °C Tstg Storage temperature -55 ~+150 °C — Weight


    OCR Scan     		PDF O-220 57KH23 571Q1 FS7UM-5 080II

    2015 - Not Available

    Abstract: No abstract text available
    Text: on the forward voltage ‘Vf’ of the diode across the load current range. A normal PN junction , PN junction diode. Figure 2 compares the leakage profile over temperature and ‘Vf’ of an SBR , solution a MOSFET is controlled to conduct only in one direction. With the proper polarity of the battery, the MOSFET is turned on to conduct and the resulting conduction losses are due to Rds (on) *I load, where Rds (on) is the on resistance of the MOSFET , and I load is the Load current. This solution can be


    Original     		PDF AN1101

    2010 - PN channel MOSFET 10A

    Abstract: UK2996G-TA3-T MOSFET 400V TO-220 UK2996 UK2996L-TA3-T
    Text: VGS = 0V, IS = 10A Continuous Source Current (body diode) IS Integral Reverse p-n Junction MIN , UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET 1 TO , Tube Tube 1 of 7 QW-R502-063.B UK2996 MOSFET ABSOLUTE MAXIMUM RATING PARAMETER Drain , -220 Channel to Ambient TO-220F/TO-220F1 TO-220 Channel to Case TO-220F/TO-220F1 SYMBOL RATINGS 62.5 , Turn-on Rise Time Turn-off Delay Time 38 ID = 10A , VDD 400V, VGS = 10V RL=60 21 ID=5A nC


    Original     		PDF UK2996 O-220 UK2996 O-220F O-220F1 UK2996L-TA3-T UK2996G-TA3-T UK2996L-TF3-T UK2996G-TF3-T UK2996L-TF1-T PN channel MOSFET 10A UK2996G-TA3-T MOSFET 400V TO-220 UK2996L-TA3-T

    2011 - Not Available

    Abstract: No abstract text available
    Text: Source Current (body diode) IS Integral Reverse p-n Junction Diode in the MOSFET Drain Pulse , UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET 1 TO , -063.C UK2996 MOSFET ABSOLUTE MAXIMUM RATING PARAMETER Drain to Source Voltage Continuous Drain Current , . THERMAL DATA CHARACTERISTICS Channel to Ambient TO-220 Channel to Case TO-220F/TO-220F1 TO , , VGS = 0V, f = 1MHz ID = 10A , VDD ≈ 400V, VGS = 10V MIN TYP MAX ±30 600 2.0 4.0 ±10 100


    Original     		PDF UK2996 O-220 UK2996 O-220F O-220F1 O-220F2 UK2996L-TA3-T UK2996G-TA3-T UK2996L-TF1-T UK2996G-TF1-T

    PN channel MOSFET 10A

    Abstract: AF4910N 4910n
    Text: AF4910N Dual N-Channel 30-V (D-S) MOSFET Features General Description -Low rDS(on) Provides , D1 S2 3 6 D2 S1/2 G1/2 D1/2 Channel 1/2 Source Channel 1/2 Gate Channel 1/2 Drain G2 4 5 D2 SOP-8 Ordering information A X Feature F : MOSFET 4910N X X X PN Package Lead Free Packing S: SOP-8 Blank : Normal L : Lead Free Package Blank , . 1.1 Jul 20, 2004 1/5 AF4910N Dual N-Channel 30-V (D-S) MOSFET Absolute Maximum Ratings (TA


    Original     		PDF AF4910N 015x45 PN channel MOSFET 10A AF4910N 4910n

    Not Available

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50UMJ-06 HIGH-SPEED SWITCHING USE FS50UMJ-06 4V DRIVE Vdss , current (Pulsed) 200 A Pd Maximum power dissipation 70 W Tch Channel temperature -55 ~+150 °C Tstg , .1999 MITSUBISHI Neh POWER MOSFET FS50UMJ-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25 , Is = 25A, Vgs = 0V — 1.0 1.5 V Rth (ch-c) Thermal resistance Channel to case — — 1.79 °C/W trr , 1 / \ 7 X » X ! 3 V 1/ * Pn — I. 70W V 1 1 0 1 2 3 4 5


    OCR Scan     		PDF FS50UMJ-06 20mi2 O-220

    Not Available

    Abstract: No abstract text available
    Text: . CHANNEL TEMPERATURE (TYPICAL) lu O s É en (/} lu er lu I- É M ¿ o lu o er ^ O en < er o 101 7 5 4 3 10 , MITSUBISHI Neh POWER MOSFET FS50SMJ-06 HIGH-SPEED SWITCHING USE FS50SMJ-06 4V DRIVE Vdss , Channel temperature -55 ~+150 °C Tstg Storage temperature -55 ~+150 °C — Weight Typical value 4.8 g A Feb.1999 MITSUBISHI ELECTRIC MITSUBISHI Neh POWER MOSFET FS50SMJ-06 HIGH-SPEED SWITCHING USE , Channel to case — — 1.79 °C/W trr Reverse recovery time is = 50A, dis/dt = -1 OOA/jis — 70 — ns


    OCR Scan     		PDF FS50SMJ-06 20mi2

    Not Available

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE FS50KMJ-06 4V DRIVE Vdss , Source current 50 A Ism Source current (Pulsed) 200 A Pd Maximum power dissipation 30 W Tch Channel , MOSFET FS50KMJ-06 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter Test , (ch-c) Thermal resistance Channel to case — — 4.17 °C/W trr Reverse recovery time Is = 50A, dis/dt , / l k h i \ \ 3 V V Pn 1 30W f "ft" 0 1 2 3 4 5 DRAIN-SOURCE


    OCR Scan     		PDF FS50KMJ-06 20mi2 O-220FN

    Trench MOSFET Termination Structure

    Abstract: Diodes ed26 PN channel MOSFET 10A Design Seminar electric field International Power Sources International Semiconductor Technologies etal p407 vishay ED26 Designing with Field Effect Transistors
    Text: super-field power MOSFET technologies to breakdown voltages lower than 250 V is investigated. The influence , power MOSFET structure can be avoided by using an unconventional racetrack layout design. Keywords: Power, MOSFET , Super, Junction, Field, Modulation, Edge Termination, Racetrack 1Introduction High-voltage power MOSFET technologies based on the super-junction concept have attracted a great deal of , of merit than those designed using high-cell-density, conventional power MOSFET technology. MOS


    Original     		PDF

    2006 - 31DF2 diode

    Abstract: mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice
    Text: MOSFET . MOSFET - PN . (N MOSFET ). IGBT () PN . , SBD . FRD ( PN ) , SBD MOSFET . SBD PN . . . MOSFET 10A 200V . A . 3 , TO-220 MOSFET . , . PN SBD . . IF 10mA 0.1A 1A 3A 10A VF 0.308 , 35µm , 1.4mm, 10mm 125 5m. . . TO-220 MOSFET 180A, 10A .


    Original     		PDF 2004/Sept. AC100/ 50/60Hz DC12V 10kHz OD-123 100/W 200/W 270/W 300/W 31DF2 diode mosfet 600V 60A TO-220 MOSFET 50V 100A TO-220 200v 10A mosfet Diode 31DQ04 200V 200A mosfet ICF-SW77 IGBT 60A spice model 60v 10KHz ir MOSFET LM317 spice

    Not Available

    Abstract: No abstract text available
    Text: RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Silicon N-channel MOSFET , specifications Inner circuit Package Type Abbreviated symbol : PN (3) Drain (3) Taping TL , power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous , Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Rev.B 1/4 , , ID= 1.4A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.7A VGS= 10V RL=21Ω RG= 10⠄¦ VDD 15V RL


    Original     		PDF RSF014N03

    Not Available

    Abstract: No abstract text available
    Text: RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Silicon N-channel MOSFET , specifications Inner circuit Package Type Abbreviated symbol : PN (3) Drain (3) Taping TL , power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous , Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board Rev.B 1/4 , = 10V, ID= 1.4A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 0.7A VGS= 10V RL=21Ω RG= 10⠄¦ VDD 15V RL


    Original     		PDF RSF014N03

    p-channel 250V 30A power mosfet

    Abstract: PN channel MOSFET 10A AK2501E
    Text: V ns nC www.ark-micro.com 2/5 Test Conditions Integral P-N diode in MOSFET IS=3.0A, VGS , P-N diode in MOSFET IS=-2.0A, VGS=0V VGS=0V IF=-2.0A,di/dt=100A/µs Rev. 2.0 Mar. 2009 AK2501E , AK2501E 250V N-Channel + P-Channel ESD-Protected MOSFET General Features ee t ESD , Channel Temperature 150 TL Soldering Temperature Distance of 1.6mm from case for 10 seconds , Forward Transconductance -2.0 Parameter Test Conditions 3.2 3.7 VGS=-10V, ID=- 1.0A


    Original     		PDF AK2501E p-channel 250V 30A power mosfet PN channel MOSFET 10A AK2501E

    OM9332SC-OM934

    Abstract: No abstract text available
    Text: ns ns ns ns Vgs = 0,VD s = 25V f=1 MHz VDD=75V,ID=5A = 7.50,1^ = 150 ( MOSFET switching times are , , lD=5A Rg = 7.50, RL= 150 ( MOSFET switching times are essentially independent of operating temperature.) II f=1 MHz Vod=30V,Id=8A Ri =75Q,RL=4JQ ( MOSFET switching times are essentially independent of , MOSPOWER symbol showing the integral P-N Junction Rectifier Tc = 25°C, Is =-8A,Vqs=0 Tj = 150°C, lF= lS i , MOSPOWER symbol showing the integral P-N Junction Rectifier *- O 5 A Modified MOSPOWER symbol showing 12 A


    OCR Scan     		PDF OM9332SC OM9334SC OM9336SC OM9338 OM9340SC OM9333SC OM9335SC OM9337SC OM9339SC 16-pin OM9332SC-OM934

    2004 - 30V 20A 10KHz power MOSFET

    Abstract: IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100
    Text: MOSFET PN MOSFET - MOSFET NMOSFET PNIGBT AC-DC DC-DC AC100 , IFVF 25150 VRIR MOSFET 10A 200V A TO-2203 MOSFET 50Hz60Hz , 1 2 - 2 - PN 3 5 6 6 7 , 24 20048 1 1A kHz NPPN N PN 1A Hz kHz MHz GHz 200V 200V MOSFET IGBT P


    Original     		PDF AC100/ 0QY03 EP10HY03 EP10LA03 EP10QY03 OD-123 200270/W EP10HA03 30V 20A 10KHz power MOSFET IGBT 60A spice model 10EDB20 ICF-SW77 smd 1a 100v diode bridge sbd diode S 2MV10 200v 3A schottky 31DF2 AC100

    irf740 spice model

    Abstract: IRF740
    Text: Application Note AN-975) Device Level, SPICE MOSFET Model W (m), Channel Width L (pm , , inverters, choppers, audio amplifiers and high energy pulse circuits. 400V 0.55A 10A IRF741 350V 0.55« 10A IRF742 400V 0.80Q 8.3A IRF743 The H E X F E T transistors also , VGS = 10V, lD = 10A V d s - 0.8 x Max. Rating See Rg. 16 (Independent of operating temperature) td{on) Tum-On Delay Time ALL - 14 21 ns VDD = 200V Id 3 10A , RG = 9.10 5 t


    OCR Scan     		PDF SS452 IRF740 IRF74Ã IRF742 IRF743 T0-220AB IRF741 C-299 irf740 spice model IRF740

    OM9332SC

    Abstract: OM9333SC OM9334SC OM9335SC OM9336SC OM9337SC OM9339SC OM9340SC
    Text: – a a. 125 100 75 50 25 0 ìeJ0= 1.0 °i D/W" Unless , ,RL=15Q ( MOSFET switching times aie essentially independent of operating temperature.) 15 30 ns VDD=30V,ID=8A Rg=75Q,RL«=4JQ ( MOSFET switching times are essentially independent of operating temperature.) 9 30 ns Vdq ■> 75V, lD=5A R9 = 75£2,Rl=15£1 ( MOSFET switching times are essentially independent , symbolshowing s^z the integral P-N ilj^ Junction Rectifier 0 ) s 5 A Modified MOSPOWER symbol showing the


    OCR Scan     		PDF OM9332SC OM9334SC OM9336SC OM9338Sfc OM9340SC OM9333SC OM9335SC OM9337SC OM9339SC 16-pin OM9339SC

    2004 - Not Available

    Abstract: No abstract text available
    Text: input. PIN 5: GND- Chip power ground. PN 7: OUT- MOSFET switch output. APPLICATION , ) High-Side MOSFET Switch. The AIC1523 is an integrated high-side power 500mA Continuous Load Current , cards. The high-side switch is a MOSFET with 120mΩ RDS(ON), low Current-Limit / Short Circuit , 1.0A , well Active-High or Active-Low Enable. below the 5A safety requirement, and thermal , VCTL =Logic “0” VCTL =Logic “1” 0.01 0.01 1 1 µA Output MOSFET Resistance


    Original     		PDF AIC1523 500mA AIC1523

    2011 - Not Available

    Abstract: No abstract text available
    Text: a large PCB and connected to GND for maximum power dissipation. Ordering Information GS PN , Temperature(Soldering, 10 sec) mW ºC/W Available Options Part Number Channel Enable pin (EN , Shutdown Quiescent Current Input Quiescent Current/ Channel RDS(ON) Switch on-resistance GS9313 , =5V 0.01 1 µA TD(ON) Output Turn-on Delay Time VIN=5V,CL=1uF,Rload= 10⠄¦ 10 µS TR Output Turn-on Rise Time VIN=5V,CL=1uF,Rload= 10⠄¦ 800 µS TD(OFF) Output Turn-off Delay


    Original     		PDF GS9313/9323 Lane11

    1997 - INT-944

    Abstract: AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
    Text: components: a diode drop across the P-N junction and the voltage drop across the driving MOSFET . Thus , (Figure 3). As the MOSFET channel stops conducting, electron current ceases and the IGBT current drops , of transconductance occurs when the saturation effects in the MOSFET channel , that reduce the base , MOSFET channel current more than it increases the gain of the PNP, the saturation in transconductance , ) Topics covered: How the IGBT complements the MOSFET Silicon structure and equivalent circuit


    Original     		PDF AN-983 INT-944 AN983 INT990 IRF 949 C50U IRGPC50U IRGBC40U P channel 600v 20a IGBT sec irf840 AN-983
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