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    IRG4BC20 Price and Stock

    Infineon Technologies AG IRG4BC20W-S

    IGBT 600V 13A 60W D2PAK
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    DigiKey IRG4BC20W-S Tube 50
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    Infineon Technologies AG IRG4BC20FD-S

    IGBT 600V 16A 60W D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRG4BC20FD-S Tube 150
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    Infineon Technologies AG IRG4BC20SD-S

    IGBT 600V 19A 60W D2PAK
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    DigiKey IRG4BC20SD-S Tube 50
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    Infineon Technologies AG IRG4BC20UD-S

    IGBT 600V 13A 60W D2PAK
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    DigiKey IRG4BC20UD-S Tube 300
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    Infineon Technologies AG IRG4BC20W-SPBF

    IGBT 600V 13A 60W D2PAK
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    Find more IRG4BC20 price and stock on Findchips.com

    IRG4BC20 Datasheets (122)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRG4BC20 International Rectifier Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 1.66V Original PDF
    IRG4BC20F International Rectifier Fast Speed IGBT Original PDF
    IRG4BC20F International Rectifier INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    IRG4BC20F International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package; A IRG4BC20F with Standard Packaging Original PDF
    IRG4BC20FD International Rectifier Fast CoPack IGBT Original PDF
    IRG4BC20FD International Rectifier INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Original PDF
    IRG4BC20FD International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; A IRG4BC20FD with Standard Packaging Original PDF
    IRG4BC20FDPbF International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3TO-220AB Original PDF
    IRG4BC20FDPBF International Rectifier 600V Fast 1-8 kHz Copack IGBT in a TO-220AB package; Similar to IRG4BC20FD with Lead Free Packaging Original PDF
    IRG4BC20FD-S International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package Original PDF
    IRG4BC20FD-S International Rectifier Fast CoPack IGBT Original PDF
    IRG4BC20FD-SPBF International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 16A 60W D2PAK Original PDF
    IRG4BC20FD-SPbF International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3D2-PAK Original PDF
    IRG4BC20FD-STRL International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package Original PDF
    IRG4BC20FD-STRL International Rectifier Original PDF
    IRG4BC20FDSTRLP International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3D2PAK T/R Original PDF
    IRG4BC20FD-STRLPBF International Rectifier TRANS IGBT CHIP N-CH 600V 16A 3D2-PAK T/R Original PDF
    IRG4BC20FD-STRR International Rectifier IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 16A 60W D2PAK Original PDF
    IRG4BC20FD-STRR International Rectifier 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package Original PDF
    IRG4BC20FD-STRR International Rectifier Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode Original PDF
    ...

    IRG4BC20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRG4BC20S

    Abstract: 0V39
    Text: PD - 91597A IRG4BC20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		1597A IRG4BC20S O-220AB O-220AB VG252-7105 IRG4BC20S 0V39 PDF

    IRG4BC20MD

    Abstract: No abstract text available
    Text: PD -94115 IRG4BC20MD Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery


    Original     		IRG4BC20MD 10kHz O-220AB 10kHz) O-220AB IRG4BC20MD PDF

    IRG4BC20

    Abstract: IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001
    Text: PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		-91599A IRG4BC20KD O-220AB IRG4BC20 IRG4BC20KD IRGBC20KD2 IRGBC20MD2 motor IG 2200 19 00001 PDF

    IRGBC20K-S

    Abstract: IRGBC20M-S AN-994 IRG4BC20K-S
    Text: PD - 91620A IRG4BC20K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V • Combines low conduction losses with high


    Original     		1620A IRG4BC20K-S IRGBC20K-S IRGBC20M-S AN-994 IRG4BC20K-S PDF

    IRG4BC20U

    Abstract: IRG4BC20
    Text: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		91448D IRG4BC20U O-220AB O-220AB IRG4BC20U IRG4BC20 PDF

    AN-994

    Abstract: IRG4BC20SD-S
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		IRG4BC20SD-S AN-994 IRG4BC20SD-S PDF

    AN-994

    Abstract: IRGBC20KD2-S IRGBC20MD2-S
    Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter


    Original     		IRG4BC20KD-SPbF EIA-418. AN-994 IRGBC20KD2-S IRGBC20MD2-S PDF

    AN-994

    Abstract: IRG4BC20SD-S irg4bc
    Text: PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		IRG4BC20SD-S AN-994 IRG4BC20SD-S irg4bc PDF

    AN-994

    Abstract: IRG4BC20FD-S
    Text: PD -91783A IRG4BC20FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		-91783A IRG4BC20FD-S optimize20 AN-994 IRG4BC20FD-S PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter


    Original     		IRG4BC20KD-SPbF EIA-418. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.4Vtyp. @ 10A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4


    Original     		IRG4BC20SD O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94906 IRG4BC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4BC20FDPbF O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94907 IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V


    Original     		IRG4BC20KDPbF O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95782A IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies


    Original     		5782A IRG4BC20W-SPbF 150kHz EIA-418. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94908 IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode


    Original     		IRG4BC20MDPbF 10kHz O-220AB 10kHz) PDF

    irf 100v 200A

    Abstract: transistor irf 840 IRF 840 equivalent
    Text: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    Original     		IRG4BC20UDPbF O-220AB O-220AB. irf 100v 200A transistor irf 840 IRF 840 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95742 IRG4BC20FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		IRG4BC20FPbF O-220AB O-220AB O-220AB. PDF

    ST 95640

    Abstract: IRG4BC20W
    Text: PD-95640 IRG4BC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter


    Original     		PD-95640 IRG4BC20W O-220AB. O-220AB ST 95640 IRG4BC20W PDF

    f1010

    Abstract: No abstract text available
    Text: PD - 94939 IRG4BC20SDPbF • Lead-Free www.irf.com 1 1/13/04 IRG4BC20SDPbF 2 www.irf.com IRG4BC20SDPbF www.irf.com 3 IRG4BC20SDPbF 4 www.irf.com IRG4BC20SDPbF www.irf.com 5 IRG4BC20SDPbF 6 www.irf.com IRG4BC20SDPbF www.irf.com 7 IRG4BC20SDPbF 8 www.irf.com


    Original     		IRG4BC20SDPbF f1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -94908A IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode


    Original     		-94908A IRG4BC20MDPbF 10kHz O-220AB 10kHz) PDF

    AN-994

    Abstract: IRGBC20KD2-S IRGBC20MD2-S 10 DC IR Bridge
    Text: PD -95677 IRG4BC20KD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter


    Original     		IRG4BC20KD-SPbF EIA-418. AN-994 IRGBC20KD2-S IRGBC20MD2-S 10 DC IR Bridge PDF

    transistor IR 840

    Abstract: OZ930
    Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


    OCR Scan     		IRG4BC20UD T0220AB transistor IR 840 OZ930 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1601 International IQR Rectifier IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .


    OCR Scan     		IRG4BC20FD O-22QAB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1448C International IOR Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


    OCR Scan     		1448C IRG4BC20U TQ-220AB 002flb45 PDF