E28F008SA Search Results

Flash SIMM 80

Abstract: E28F008SA EDI7F341MC 80pin-SIMM SIMM 80 jedec
Contextual Info: EDI7F341MC White Electronic Designs 1Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F341MC and EDI7F2341MC are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages

1mx8

Abstract: E28F008SA EDI7F4341MC
Contextual Info: EDI7F4341MC 4x1Mx32 FLASH MODULE FEATURES DESCRIPTION n 4x1Mx32 The EDI7F4341MC is organized as four banks of 1Mx32. The module is based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. n Based on Intel's E28F008SA Flash Device

SIMM 80 jedec

Abstract: E28F008SA EDI7F341MC
Contextual Info: EDI7F341MC White Electronic 1Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F341MC and EDI7F2341MC are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages which are mounted on a FR4 substrate.

e28f008

Contextual Info: EDI7F341MC 1 MEG x 32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F341MC and EDI7F2341MC are organized as one and two banks of 1 Meg x 32 respectively. The modules are based on Intel's E28F008SA - 1Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: EDI7F4341MC White Electronic Designs 4x1Mx32 FLASH MODULE FEATURES  4x1Mx32  Based on Intel's E28F008SA Flash Device  Fast Read Access Time - 90ns  5V - Only Reprogramming  Low Power Dissipation DESCRIPTION The EDI7F4341MC is organized as four banks of 1Mx32.

Contextual Info: ^EDI EDI7F34IMZ 1Megx32 ELECTRONIC DESIGNS, INC 1Megx32 Flash Module Block Diagrams The EDI7F34IMZ and EDI7F2341MZ are orga­ nized as one and two banks of 1 Meg x 32 respec­ tively. The modules are based on Intel's E28F008SA - 1Megx8 Flash device in TSOP packages which

E28F008SA

Abstract: EDI7F341MC
Contextual Info: EDI7F341MC 1Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F341MC and EDI7F2341MC are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate.

1mx8

Abstract: E28F008SA EDI7F341MC
Contextual Info: EDI7F341MC 1Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F341MC and EDI7F2341MC are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate.

E28F00SA

Abstract: E28F008SA
Contextual Info: EDI7F34IMZ 1Megx32 1Megx32 Flash Module The EDI7F34IMZ and EDI7F2341MZ are organized as one and two banks of 1 Meg x 32 respectively. The modules are based on Intel's E28F008SA - 1Megx8 Flash device in TSOP packages which are mounted on an FR4 substrate. Both modules offer access times between 90 and

E28F008SA-120

Abstract: gold capacitor E28F008SA-85 80 pin simm flash E28F008SA edge connector 22 pin 28F008SA
Contextual Info: SL29041-xxx1VI 1M X 32 Bits Flash Memory Module 5V Supply; 12V Program FEATURES GENERAL DESCRIPTION Access Time of 90 and120ns 1 TTL compatible inputs and outputs 5V VCC and 12V VPP JEDEC standard Tin or Gold edge connectors 1 Intel Part Number E28F008SA-85, E28F008SA-120 flash

1mx8

Abstract: E28F008SA EDI7F4341MC A1359
Contextual Info: EDI7F4341MC White Electronic 4x1Mx32 FLASH MODULE FEATURES DESCRIPTION „ 4x1Mx32 „ Based on Intel's E28F008SA Flash Device „ Fast Read Access Time - 90ns „ 5V - Only Reprogramming „ Low Power Dissipation The EDI7F4341MC is organized as four banks of 1Mx32.

CIC-40TS-40D-A6-YAM-S

Abstract: E28F016Sc E28F008SA a6ya
Contextual Info: CIC-40TS-40D-A6-YAM-S Rev 2 40-Lead TSOP to a 40-Pin DIP 9/97 (EXAMPLES) TSOP DEVICES: PIN CONFIGURATION: E28F004SC / S3 / S5 E28F008SA / SA-L / SC / S3 / S5 E28F016SC / S3 / S5 SOCKET: Yamaichi IC191-0402-002N PRICING: QTY PRICE EACH 1-4 5-9 10-24 25-49

Contextual Info: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time

intel i3 mtbf

Abstract: PA28F0085A-120 28F008SA E0000 E28F008SA intel PLD 29041 E28F008SA-120 PA28F0085A ER27
Contextual Info: INTEL CORP MEMORY/PL] / 5 bE ]) m MfliblTb D0 7 b4f l ö TTb • ITL2 ß fö iy ilO I M G W in y 28F008SA 8 MBIT (1 MBIT x 8) FLASH MEMORY 3 zç. ■ Hlgh-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time

28F008SA

Abstract: E28F008SA E0000 SmartDie TB28F008SA
Contextual Info: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F008SA x8 n n n n High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles per Chip Automated Byte Write and Block Erase

28F008SAT

Contextual Info: inU PRELIMINARY 28F008SA 8-MBIT 1-MBIT X 8 FlashFile MEMORY Extended Temperature Specifications included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase Cycles

6361A

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation

Intel i7 MTBF

Contextual Info: in te l 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase

edge connector 32 package

Abstract: 28F008SA E28F008SA-120 SL29160-12G1VI DQ30
Contextual Info: SL29160-12G1VI Advance 4M X 32 Bits 80-Pin Flash SIMM (5V Supply; 12V Program ) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29160-12G1VI is a 4M x 32 bits 80-pin flash Single In-line Memory Module (SIMM). This module consists of

TB28F008SA-100

Abstract: psop 44 of PA28F008SA 28F008SA E0000 28F008SA 8-Mbit FlashFile Memory E28F008SA-120 SmartDie intel386sl
Contextual Info: 28F008SA 8-MBIT 1-MBIT x 8 FlashFile TM MEMORY Extended Temperature Specifications Included Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks Y Extended Cycling Capability 100 000 Block Erase Cycles 1 6 Million Block Erase Cycles per Chip

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: a WPF29041-120G1XX WHITE /M ICROELECTRONICS 4MBYTE 1Mx32 FLASH (5VSupply; 12V Program) S IM M MODULE p r e lim in a r y * FEATURES GENERAL DESCRIPTION • Access Tim e of 120ns The W h ite M icroelectronics WPF29041-120G1XX is a 1M x 32 bits ■ 80-pin Flash Single In-line M em ory M odule (SI M M ). The WPF29041-

E28F008SA-120

Abstract: E28F008SA
Contextual Info: inlel 28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY Hlgh-Denslty Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time SRAM-Compatible Write Interface Extended Cycling Capability — 100,000 Block Erase Cycles

a56 transistor

Abstract: DD28F032SA E28F008SA n28f512 Needhams Electronics that your PROM programming hardware and software Needhams Electronics
Contextual Info: Intel Corporation Memory Components Div. 1900 Prairie City Rd. Folsom, CA 95630 Mail Stop: FM3-83 Needhams Electronics 4630 Beloit Drive #20 Sacramento, CA 95838 REF: Intel and Needhams Electronics Test Services Agreement dated 10/30/95 Dear PROM Programmer Vendor: