25F008SA Search Results

Contextual Info: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time

intel i3 mtbf

Abstract: PA28F0085A-120 28F008SA E0000 E28F008SA intel PLD 29041 E28F008SA-120 PA28F0085A ER27
Contextual Info: INTEL CORP MEMORY/PL] / 5 bE ]) m MfliblTb D0 7 b4f l ö TTb • ITL2 ß fö iy ilO I M G W in y 28F008SA 8 MBIT (1 MBIT x 8) FLASH MEMORY 3 zç. ■ Hlgh-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time

E28F008SA-120

Abstract: E28F008SA
Contextual Info: inlel 28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY Hlgh-Denslty Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time SRAM-Compatible Write Interface Extended Cycling Capability — 100,000 Block Erase Cycles

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase

Contextual Info: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDle Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase

29043

Abstract: PPD 3503
Contextual Info: intei A Ë > m M ! D M F @ IB IiM irD @ M ] 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY • High-Density Symmetrically Blocked Architecture — Sixteen 64-K byte Blocks ■ Low -Voltage Operation 3.3V + 0 .3 V or 5.0V ± 10% Vc c ■ Extended Cycling Capability

Contextual Info: P ftS y O lK IM V in te i 28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time Extended Cycling Capability — 100,000 Block Erase Cycles

Contextual Info: Â P M ftK K S S 0 M F ^ 5 M Y 0 ö [M in te i 28F008SA-L 8 MBIT (1 MBIT x 8) FLASH MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Deep-Powerdown Mode — 0.20 f iA Ice Typical

b982

Abstract: b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305
Contextual Info: 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification Y Y Y Y High-Density Symmetrically Blocked Architecture Sixteen 64-Kbyte Blocks Extended Cycling Capability 100K Block Erase Cycles 1 6M Block Erase Cycles per Chip Automated Byte Write and Block Erase

intel 3301

Abstract: e28f008sa-85 BA 3285
Contextual Info: INTEL CORP MEMORY/PL] / 5 bE ]) m MfliblTb D0 7 b4f l ö TTb • ITL2 ß fö iy ilO I M G W in y 28F008SA 8 MBIT (1 MBIT x 8) FLASH MEMORY 3 zç. ■ Hlgh-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time

ER-27

Abstract: 5498 transistor Intel Corporation esd testing flash memory SmartDie F008S
Contextual Info: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase