ER27 Search Results

Contextual Info: REV 2. OPTICAL SPECIFICATIONS: 7765-500-99903N: INSERTION LOSS: 1.0dB TYP. RETURN LOSS: >45dB BY APPD DATE XXX 01 DESCRIPTION CREATED DRAWING PER ER27423 JDS 09/14/10 NOTES: UNLESS OTHERWISE SPECIFIED 1. FOR USE WITH KINGS PART NUMBER: 776G-099-00701N FIBER OPTIC VIDEO JACK

motorola ctc

Abstract: RRH A2 SU-20SBR-8S O-Ring CONN FLEX SU-20SBRC1
Contextual Info: 3. ASSEMBLIES TESTED 100% FOR CONTINUITY AND HY-POT. DESCRIPTION 03 ADDED O-RING ER27736 BY APPD DATE CTC 2. CAP AND O-RING SHIPPED LOOSE, CIRCULAR NUT HAND TIGHTEN FOR SHIPPING. CONNECTOR A, 12 POSITIONS 2MM DUAL ROW VERTICAL RECEPTACLE MOLEX P/N 79107-7005

KTH-10

Contextual Info: REV DESCRIPTION BY APPD DATE E REVISED PER ER27962 XXX 2. MATERIAL SPECIFICATIONS: CONTACTS AND TRI-LOC BODY: COPPER ALLOY ALIGNMENT PINS: BRASS PER ASTM B16 CRIMP SLEEVE: PHOS. BRONZE O-RINGS AND STRAIN RELIEF: SILICONE RUBBER ALL PLASTIC PARTS: 20% GLASS FILLED POLYPROPYLENE

Contextual Info: REV DESCRIPTION WPM REVISED PER ER27689 B 1. FOR GENERAL SPECIFICATION SEE SD74-0000 BY APPD DATE DAO 09/13/10 NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS; MATERIALS: BODY: BRASS PER ASTM B16 RETAINING RING: BERYLLIUM COPPER PER ASTM B194

Contextual Info: 01 ER27483 BY APPD DATE .543 13.79 .532 13.51 .645 16.38 .630 16.00 3. FINISH SPECIFICATIONS: CONTACT: .000050 MIN GOLD PER ASTM B488 OVER .000050 NICKEL PER AMS-QQ-N-290 FERRULE: .000050 MIN NICKEL PER AMS-QQ-N-290 OVER .000050 MIN COPPER PER ASTM B734 ALL OTHER METAL PARTS: PASSIVATE PER ASTM A967.

BOEING BMS 13-65 0F

Abstract: BOEING BMS 13-65 bms 13-65 mark 562
Contextual Info: DESCRIPTION BY APPD DATE 03 PRELIMINARY DRAWING PER ER27535 CTC 2. MATERIAL SPECIFICATIONS: OUTER CONTACT & ANTI-ROTATION SPRING: BERYLLIUM COPPER PER ASTM B196. FERRULE: COMMERCIAL BRONZE. ALL OTHER METAL PARTS: BRASS PER ASTM B16. INSULATOR: TEFLON PER ASTM D1710.

Contextual Info: DESCRIPTION B REVISED PER ER27689 BY APPD DATE DAO 09/13/10 1. FOR GENERAL SPECIFICATIONS, SEE SD74-0000 WPM REV NOTES: UNLESS OTHERWISE SPECIFIED 2. MATERIAL SPECIFICATIONS: BODY: BRASS PER ASTM B16 RETAINING RING: BERYLLIUM COPPER PER ASTM B194 3. FINISH SPECIFICATION:

Contextual Info: 3. OPTICAL SPECIFICATIONS: INSERTION LOSS: 1.5dB TYP. RETURN LOSS: 45 dB MAX. DESCRIPTION A ER27683 BY APPD DATE WPM 2. FINISH SPECIFICATIONS: BASE, SPRING CLIP AND PRISM HOLDER: .000150 MIN. ARMOLOY NTDC FRONT AND REAR FLANGE & DIN RECEPT : PASSIVATE PER ASTM A967

Contextual Info: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time

Contextual Info: P R is y iif iiO K iÆ in r in ie l VE28F008 8 MBIT (1 MBIT x 8 FLASH MEMORY • High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Very High-Performance Read — 95 ns Maximum Access Time ■ Avionics Temperature Range 40°C to + 125°C

intel i3 mtbf

Abstract: PA28F0085A-120 28F008SA E0000 E28F008SA intel PLD 29041 E28F008SA-120 PA28F0085A ER27
Contextual Info: INTEL CORP MEMORY/PL] / 5 bE ]) m MfliblTb D0 7 b4f l ö TTb • ITL2 ß fö iy ilO I M G W in y 28F008SA 8 MBIT (1 MBIT x 8) FLASH MEMORY 3 zç. ■ Hlgh-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time

6361A

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation

Intel i7 MTBF

Contextual Info: in te l 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase

28F008SA

Abstract: AP-357 MTD4P05 AP-364 LT1109-12 LT1110-12 MAX732 Motorola MC34063A 29209* intel
Contextual Info: AP-359 APPLICATION NOTE 28F008SA Hardware Interfacing BRIAN DIPERT MCD MARKETING APPLICATIONS November 1996 Order Number 292094-004 Information in this document is provided in connection with Intel products No license express or implied by estoppel or otherwise to any intellectual property rights is granted by this document Except as provided in Intel’s Terms and Conditions of

7765-900-99902N

Abstract: ER27
Contextual Info: REV 7765-500-99902N: INSERTION LOSS: 2.0dB MAX RETURN LOSS: >45dB 3. OTHER LENGTHS AND CONFIGURATIONS AVAILABLE UPON REQUEST, CONTACT SALES FOR ADDITIONAL INFORMATION DIM A INCHES 24 36 48 60 72 120 144 DIM A (METERS) .60 .91 1.22 1.52 1.83 3.05 3.66 04

Thyristor chn 542

Abstract: transistor chn 952 CHN 952 transistor CHN 64 946 SEMP 690 tS27R BA 3166 MB91F644 chn 348 CM71-00104
Contextual Info: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM71-10154-1E FR80 32-BIT MICROCONTROLLER MB91640A/645A Series HARDWARE MANUAL FR80 32-BIT MICROCONTROLLER MB91640A/645A Series HARDWARE MANUAL For the information for microcontroller supports, see the following web site.

transistor s46

Abstract: diode s434 Q1017 ER-27 S46 sensor PLUTO S46-6 er72 rele 5 volt IQ101-3 ER22 relay
Contextual Info: Bruksanvisning i original Original instructions Säkerhets-PLC Safety PLC Pluto Pluto Pluto – Produktsupport Pluto - Product Support Supportwebb: Öppna www.jokabsafety.com och välj språk. Välj Produktsupport/Pluto support. Följ vidare instruktioner.

application notes CS5460

Contextual Info: 06/05/00 CS5460 Rev. C Errata Reference CS5460 Data Sheet revision DS279PP5 dated JAN ‘00 Note: This product is classified at Quality Level “QPL IV” 1. Voltage Channel Noise (Referred to Input) Specified 250 µV Maximum Rev. C 350 µV Maximum Comments The CS5460 will meet the data sheet specification in future revisions. The

FlashPro3

Abstract: PG-FP3 U13502E PC9800 PC-9800 PC-9801 uPD78F4216 3M Philippines
Contextual Info: User’s Manual PG-FP3 Flash Memory Programmer Document No. U13502EJ2V0UM00 2nd edition Date Published July 1999 J CP(K) 1998 1991 Printed in Japan [MEMO] 2 User's Manual U13502EJ2V0UM00 SUMMARY OF CONTENTS CHAPTER 1 GENERAL .17

E28F008SA-120

Abstract: E28F008SA
Contextual Info: inlel 28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY Hlgh-Denslty Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time SRAM-Compatible Write Interface Extended Cycling Capability — 100,000 Block Erase Cycles

29041

Contextual Info: [p fö iy ß iiM ö w in te i VE28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Avionics Temperature Range 40°C to + 125°C Extended Cycling Capability — 10K Block Erase Cycles — 160K Block Erase

Contextual Info: ADVANCE INFORMATION 28F008SA 8 MBIT 1 MBIT x 8 FLASHFILE MEMORY High-Density Sym m etrically Blocked Architecture — Sixteen 64 KByte Blocks • Very High-Performance Read — 85/90/120 ns Maximum Access Time ■ SRAM-Com patible W rite Interface Extended Cycling Capability

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase

Contextual Info: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDle Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase