A6YA Search Results

MOSFET N SOT-23

Abstract: Diode SOT-23 marking 27 ST3006SRG Power MOSFET N-Channel sot-23 marking 54 sot23 a6ya sot-23 MARKING CODE 54 N mosfet sot-23 N Channel sot23 sot-23 MARKING CODE NC
Contextual Info: ST3006SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3006SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

a6ya

Abstract: ST3406
Contextual Info: ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Contextual Info: ST3406SRG N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

M51V

Abstract: hu7w M3900 1/160-N D-7988 XELTEK TQFP 100 pin ic MACH435 1086H CIC-144QF
Contextual Info: •■m H H I Programming Support & Tools »EY O N D PER FO R M A N TE VANTIS APPROVED PROGRAMMERS1 For more information on the products listed below, please consult a local Vantis sales office. Manufacturer Advin 1050-L E. Duane Ave. Sunnyvale, CA 94086 408 243-7000

Contextual Info: ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly