A12A Search Results

Contextual Info: A-7720-ANA228A HOUSING 7720-AN TERM. NO 7691-A228 PLATING: 228 COLOR BROWN MATL NO ENG NO: A-7720-A02A228A A-7720-A03A228A A-7720-A04A228A A-7720-A05A228A A-7720-A06A228A A-7720-A07A228A A-7720-A08A228A A-7720-A09A228A A-7720-A10A228A A-7720-A11A228A A-7720-A12A228A

Contextual Info: XS1-A12A-128-FB217 Datasheet 2013/12/09 XMOS 2013, All Rights Reserved Document Number: X9253, XS1-A12A-128-FB217 Datasheet 1 Table of Contents 1 xCORE Multicore Microcontrollers . . 2 XS1-A12A-128-FB217 Features . . . 3 Pin Configuration . . . . . . . . . . .

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

D425G

Abstract: ACT21 SN74BCT2166
Contextual Info: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs SCHS012-D3513, JUNE 1990-REVISED NOVEMBER 1991 SN74BCT2163, SN74BCT2164 Fast Address to MATCH Delay. 12 ns Max FM PACKAGE CTOP VIEW ’BCT2163 Has Totem-Pole Match Output Q\*~

E3235

Contextual Info: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

TMS320P17

Abstract: d6151 filter lark eng 1D2T ltw 8 pin TMS320P14 TMS320LC15
Contextual Info: TMS320C1X DIGITAL SIGNAL PROCESSORS J A N U A H Y 1 9 8 7 — R E V IS E D J U L Y 1991 • Performance Up to 8.77 MIPs Commercial and Military Versions Available • All TMS320C1x Devices are Object Code Compatible Operating Free-Air Temperature . . . 0°C to 70°C

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

25CL64B-GA

Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Datasheet Serial EEPROM Series Automotive EEPROM 125℃ Operation SPI BUS EEPROM BR35Hxxx-WC 16K 32K 64K 128K ●General Description BR35Hxxx-WC is a SPI BUS interface method serial EEPROM. ●Features „ High speed clock operation up to 5MHz(Max.) „ 2.5V to 5.5V single power source operation most suitable for

W9425G6JH

Contextual Info: W9425G6JH 4 M  4 BANKS  16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

32176 Group PWM CODE

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

Z86C61

Abstract: Z86E61 Z86E63
Contextual Info: P R E L I M I N A R Y Z86E61/E63 Z8 MCU 16K/32K EPROM WITH PRELIMINARY PRODUCT SPECIFICATION Z86E61/E63 CMOS Z8® 16K/32K EPROM MICROCONTROLLER FEATURES • 8-Bit CMOS Microcontroller ■ High Voltage Protection on High Voltage Inputs ■ 40-Pin DIP, 44-Pin PLCC Style Packages

1553 bus

Abstract: HM-65664 80C31M
Contextual Info: 5öbß45b QÜ0E3M3 1ÖT • MMHS January 1991 Preview MATRA H H S 29C530 HI-REL DATA SHEET MIL-STD-1553B PROTOCOL MANAGEMENT UNIT FEATURES . PIN PROGRAMMABLE FEATURES : - COMPATIBILITY WITH INTEL AND MOTOROLA MICROPROCESSORS - 8 OR 16 BIT INTERFACE - SUPPORT OF THREE MEMORY INTERFACE

DS3235

Abstract: DS3600 DS3235-1 PNC11 P10C68 P11C68 PNC10C68 PNC11C68
Contextual Info: s» 5 Ë GEC PLESSEY MARCH 1993 PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 3 6 0 0 - 1 .5 P 1 0 C 6 8 /P 1 1 C 6 8 Previously PNC10C68 and PNC11C68 CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM (Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)

28LV64

Abstract: 28LV64PC-4 hex55 DSA009112
Contextual Info: Turbo IC, Inc. 28LV64 LOW VOLTAGE CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 200 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times

intel 945 motherboard schematic diagram

Abstract: PC intel 945 MOTHERBOARD eprom chip used in CIRCUIT MGE 3200 rt midi in midi out connections intel 915 motherboard schematic creative sound blaster 5.1 circuit diagram SPC3 CS4239 CS4239-JQ CS4239-KQ
Contextual Info: CS4239 c irri K — Advanced Product Databook LOGIC FEATURES • Compatible with Sound Blaster , Sound Blaster Pro™, and Windows Sound System™ ■ Integrated CrystalClear™ 3D Stereo Enhancement DESCRIPTION ■ Enhanced Stereo Full Duplex Operation

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

8512A

Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges

ce0560

Abstract: lmk107 bj105ka-t smt a 472j BC4-ext 4389A-EYXFDC CE JMK107 0x1009 ricoh year date code Nikkai capacitor 472j
Contextual Info: 22-Feb.-2006 Ver.1.4 TAIYO YUDEN Confidential & Tentative EYSFDCAXW Bluetooth Module EYSFDCAXW RF+Baseband (Class 2 UART) Data Report In case you adopt this module and design some appliance, please ask for the latest specifications from the local sales office.

amd 29F400AB

Abstract: 29F400AT 29F400AB
Contextual Info: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements

TMS320P14

Abstract: TMS320LC15
Contextual Info: TMS320C1x DIGITAL SIGNAL PROCESSORS SPRS009C – JANUARY 1987 – REVISED JULY 1991 • • • • • • • • • • • • • • • Performance Up to 8.77 MIPs • • All TMS320C1x Devices are Object Code Compatible 144/256-Word On-Chip Data RAM