264BYTE Search Results

AT45DB081D

Abstract: JEP106 PA10 PA11 AT45DB081D-MU-SL954
Contextual Info: Features • Single 2.5V or 2.7V to 3.6V Supply • RapidS Serial Interface: 66MHz Maximum Clock Frequency • • • • • • • • • • • • • • – SPI Compatible Modes 0 and 3 User Configurable Page Size – 256-Bytes per Page – 264-Bytes per Page

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

TC5816

Contextual Info: IN TEG RA TED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 ADC SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only

Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 2048 Pages (264 Bytes/Page) Main Memory • Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of

Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 1024 Pages (264 Bytes/Page) Main Memory • Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Non-Volatile Memory

Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 512 Pages (264 Bytes/Page) Main Memory • Optional Page and Block Erase Operations • One 264-Byte SRAM Data Buffer

Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 2048 Pages (264 Bytes/Page) Main Memory • Two 264-Byte Data Buffers - Allows Receiving of Data while Reprogramming of

Contextual Info: TOSHIBA TENTATIVE TC58V16BDC T O S H I B A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A T E C M O S 16 M B I T 2 M X 8 BITS C M O S N A N D FLASH E2P R O M D ESC RIP TIO N The TC58V16 device is a single 3.3-volt 16 Mbit NAND Electrically Erasable and Programmable

Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 1024 Pages (264 Bytes/Page) Main Memory • Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Non-Volatile Memory

sram 2112

Abstract: 001H 106H NXSF014B-0699
Contextual Info: NX25F011A NX25F041A NX25F011A NX25F041A 1M-BIT AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE PRELIMINARY JUNE 1999 2 FEATURES • Flash Storage for Resource-Limited Systems – Ideal for portable/mobile and microcontroller-based applications that store voice, text, and data

KC06

Abstract: TC58V16BFT
Contextual Info: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X

toshiba NAND ID code

Contextual Info: TC5816BFT TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. The device is organized as 264 byte X

Contextual Info: TOSHIBA TC58V16BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC58V16 device is a single volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64 K X 8 bits. Tne device is organized as 264 byte X

AT45DB081

Abstract: AT45DB081A AT45DB081B AT45DB081B-CC AT45DB081B-RC PA10 PA11
Contextual Info: Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • Page Program Operation • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 4096 Pages (264 Bytes/Page) Main Memory

BSC 68H

Abstract: AT45DB021 AT45DB021A AT45DB021B AT45DB021B-CC AT45DB021B-CI AT45DB021B-RC AT45DB021B-SC AT45DB021B-TC
Contextual Info: Features • • • • • • • • • • • • • • • 100% Compatible to AT45DB021 and AT45DB021A Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 1024 Pages (264 Bytes/Page) Main Memory

AT45DB081B-RU

Abstract: AT45DB081 AT45DB081A AT45DB081B AT45DB081B-CC AT45DB081B-CNC PA10 PA11
Contextual Info: Features • • • • • • • • • • • • • Single 2.5V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 20 MHz Max Clock Frequency Page Program Operation – Single Cycle Reprogram (Erase and Program) – 4096 Pages (264 Bytes/Page) Main Memory

AT45D011

Abstract: AT45D011-JC AT45D011-JI AT45D011-SC AT45D011-SI AT45D011-XC AT45D011-XI AT45DB011 MS-016
Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Pages (264 Bytes/Page) Main Memory Optional Page and Block Erase Operations

BSC 68H

Abstract: sck 054 DataFlash SCK 055 TSOP 28 SPI memory Package flash AT45DB041 AT45DB041A AT45DB041A-JC AT45DB041A-RC AT45DB041A-TC
Contextual Info: Features • • • • • • • • • • • • • • 100% Compatible to AT45DB041 Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 2048 Pages (264 Bytes/Page) Main Memory

8 bit sequential multiplier VERILOG

Abstract: ATMEGA 32 AVR DATASHEET data sheet of AT89c52 microcontroller rfid based 8 bit microprocessor using vhdl interface bluetooth with AVR ATMEGA 16 interface bluetooth with AVR atmel isp attiny atmega Tiny 84 pin plcc ic base ic at89c51
Contextual Info: R PRODUCT GUIDE September 1999 AT90 Series AVR 8-bit Microcontrollers Part Number Processor AT90S1200 AVR AVR RISC, In-System Programmable Microcontroller with 1K Byte Flash and 64 Bytes EEPROM, 20-pin PDIP, 20-pin SOIC and 20-pin SSOP Packages Description

AT45D041A-RC

Abstract: TSOP 28 SPI memory Package flash AT45D041 AT45D041A AT45D041A-JC AT45D041A-TC PA10
Contextual Info: Features • • • • • • • • • • • • • • 100% Compatible to AT45D041 Single 4.5V - 5.5V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 2048 Pages (264 Bytes/Page) Main Memory

sandisk micro sd

Abstract: digital clock using at89s52 microcontroller stepper motor control with avr application notes sandisk micro sd card pin configuration vhdl code for rs232 receiver STK 435 power amplifier Microcontroller AT89S52 vhdl code for ofdm Microcontroller AT89S52 40 pin fingerprint scanner circuit
Contextual Info: Atmel Corporation Atmel Operations Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 1 408 441-0311 FAX 1 (408) 487-2600 Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1 (408) 441-0311 FAX 1 (408) 436-4314 Regional Headquarters Microcontrollers

AT45DB011B-SC

Contextual Info: Features • • • • • • • • • • • • • • Single 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 20 MHz Max Clock Frequency Page Program Operation – Single Cycle Reprogram (Erase and Program) – 512 Pages (264 Bytes/Page) Main Memory

Contextual Info: Features • Single 2.5V or 2.7V to 3.6V Supply • RapidS Serial Interface: 66MHz Maximum Clock Frequency – SPI Compatible Modes 0 and 3 • User Configurable Page Size • • • • • • • • • • • • • – 256-Bytes per Page – 264-Bytes per Page

Contextual Info: Features * Single 4.5V - 5.5V Supply * Serial Interface Architecture * Page Program Operation - Single Cycle Reprogram Erase and Program - 1024 Pages (264 Bytes/Page) Main Memory * Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of Nonvolatile Memory