TFBGA63 Search Results

Contextual Info: P-TFBGA63-0911-0.80AZ

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

M29DW323D

Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns

M29W640DB

Abstract: M29W640D M29W640DT A0-A21 6A000
Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns

STMicroelectronics NAND256W3A

Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Contextual Info: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array

M29DW324D

Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

rj11 4pin connector to db9 female connector

Abstract: OSC008 BTC 139 C04310 Raltron Electronics C04310 ERJ-2GEJ472X b24 b03 so-8 Xilinx XC2S150E TJA1041 SOIC14 A10 sot23-5
Contextual Info: ADSP-BF537 EZ-KIT Lite Evaluation System Manual Revision 1.1, August 2005 Part Number 82-000865-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2005 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written

OSC008

Abstract: usb to rj45 extenders AD1871 SW6 FLASH Enable Switch A10 sot23-5 ADSP-BF537 modular plug Tyco RJ45 RJ11 4pin A46 sot CON033
Contextual Info: ADSP-BF537 EZ-KIT Lite Evaluation System Manual Revision 2.0, June 2006 Part Number 82-000865-01 Analog Devices, Inc. One Technology Way Norwood, Mass. 02062-9106 a Copyright Information 2006 Analog Devices, Inc., ALL RIGHTS RESERVED. This document may not be reproduced in any form without prior, express written consent

IS1651

Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

P-TFBGA63

Abstract: P-TFBGA63-0911-0
Contextual Info: P—TFBGA63—0911—0.80AZ Uniti nn Jun.2003

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read ■ – VPP =12 V for Fast Program (optional) ACCESS TIME: 90 ns

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Be 555

Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

M29DW323D

Abstract: M29DW323DB M29DW323DT
Contextual Info: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns

Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block , 3V Supply Flash memory Feature summary „ Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) „ Access time: 70, 90ns

C4858

Contextual Info: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications

VFBGA63

Abstract: NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand
Contextual Info: NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● ● ● ● ● ● ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass

TSOP48 outline

Abstract: cons EMC2112 M29DW323 M29DW324 M29DW640D TFBGA48
Contextual Info: FLASH NOR HIGH DENSITY & CONSUMER M29DWxxx FAMILY Multiple Bank May, 2004 HD & Cons. Division -VAM29DW.ppt – ptfl0402-504 STMicroelectronics www.st.com/flash Family Overview ¾Densities from 32Mb to 64Mb ¾Wide application area covered ¾0.15µm process technology