E3235 Search Results

Contextual Info: < Dual-In-Line Package Intelligent Power Module > PSS35S92F6-AG PSS35S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  600V / 35A CSTBT  N-side IGBT open emitter  Built-in bootstrap diodes with current limiting resistor

V850E/IA1

Abstract: stk 1264 F8212 STK 1262 STK 403 130 stk 496 270 STk 412 120 stk 496 430 E2134 E1307
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

stk 412 490

Abstract: STK 403 130 STK 1262 stk 496 630 V850E/IA1 stk 403 - 130 F8212 stk 496 270 stk 1264 STk 442 120
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

019k

Contextual Info: MITSUBISHI IGBT MODULES CM200DX-24S HIGH POWER SWITCHING USE INSULATED TYPE - 6th Generation NX series - CM200DX-24S Collector current IC .….… 200A Collector-emitter voltage VCES .… 1 2 0 0 V Maximum junction temperature T jmax .

Contextual Info: < IGBT MODULES > CM100RX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 100A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 450A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

TC56

Abstract: cm300dx-12a IC300
Contextual Info: MITSUBISHI IGBT MODULES CM300DX-12A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM300DX-12A Collector current IC .….… 300A Collector-emitter voltage VCES .… 600V Maximum junction temperature T jmax .

CM900duc-24nf

Contextual Info: MITSUBISHI IGBT MODULES CM900DUC-24NF HIGH POWER SWITCHING USE INSULATED TYPE - MPD series using 5th Generation IGBT and FWDi - CM900DUC-24NF ●IC ….………………….…. 900 A ●V CES …………….….…. 1200 V ●Flat base Type ●Copper non-plating base plate

IC400

Contextual Info: < IGBT MODULES > CM400DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 400A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: MITSUBISHI IGBT MODULES CM300DX-24A HIGH POWER SWITCHING USE INSULATED TYPE - 5th Generation NX series - CM300DX-24A Collector current IC .….… 300A Collector-emitter voltage VCES .… 1 2 0 0 V Maximum junction temperature T jmax .

Contextual Info: < IGBT MODULES > CM75TX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 75A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM100DY-34A HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 100A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM100TX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 100A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 3 5 0 A* Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: PRELIMINARY < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 100A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM150RX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 150A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

pss20s92

Contextual Info: < Dual-In-Line Package Intelligent Power Module > PSS20S92F6-AG PSS20S92E6-AG TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  3 phase DC/AC inverter  600V / 20A CSTBT  N-side IGBT open emitter  Built-in bootstrap diodes with current limiting resistor

Contextual Info: < IGBT MODULES > CM600DXL-34SA HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 600A Collector-emitter voltage V CES .… 1 7 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 7 9 0 A* Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM1000DXL-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 9 0 0 A* Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM75MXA-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 75A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM300DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 300A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: PRELIMINARY < IGBT MODULES > CM150RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 150A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .

Contextual Info: < IGBT MODULES > CM150DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .….… 150A Collector-emitter voltage V CES .… 1 2 0 0 V Maximum junction temperature T j m a x .