A14A Search Results

A114F

Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
Contextual Info: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —

A14A

Abstract: A14F
Contextual Info: A14A, A14C, A14E A14F, A14P 1A, 50V - 1000V Diodes Decem ber 1993 Features Package • High-Temperature M etallurglcally Bonded, No Com­ pression Contacts as Found In Diode-Constructed Rectifiers JEDEC STYLE 0 0 -2 0 4 TOP VIEW • Glass-Passivated Junction

A14F

Abstract: A14A
Contextual Info: DIGITRON SEMICONDUCTORS A14A, A14F, A14U STANDARD RECOVERY RECTIFIERS MAXIMUM RATINGS 25°C unless otherwise noted Parameter Symbol Repetitive peak reverse voltage A14U A14F A14A Unit VRRM 25 50 100 V DC voltage VR 25 50 100 V Average forward current 100°C ambient

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

Part Marking STMicroelectronics TSSOP8

Abstract: M95256
Contextual Info: M95256-W M95256-R M95256-DR M95256-DF 256-Kbit serial SPI bus EEPROM with high-speed clock Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 256 Kb (32 Kbytes) of EEPROM – Page size: 64 bytes

atmel100

Abstract: AT25DQ321 AT25DQ161 AT25DQ
Contextual Info: Atmel AT25DQ161 16-Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support Features DATASHEET Not Recommended for New Designs Use AT25DQ321  Single 2.7V - 3.6V supply  Serial Peripheral Interface SPI compatible Supports SPI Modes 0 and 3

AT25DF081A

Abstract: AT25DF081A-SH AT25DF081A-SSH-T 8715a
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • • • • • • • • • • • • • • • • – Supports SPI Modes 0 and 3 – Supports RapidS Operation – Supports Dual-Input Program and Dual-Output Read

T4 1060

Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

SST39LF512

Abstract: SST39LF010 SST39LF020 SST39LF040 SST39VF010 SST39VF020 SST39VF040 SST39VF512
Contextual Info: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet

SST39SF010A

Abstract: SST39SF020A SST39SF040 A17-A3
Contextual Info: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations

Z86C61

Abstract: Z86E61 Z86E63
Contextual Info: P R E L I M I N A R Y Z86E61/E63 Z8 MCU 16K/32K EPROM WITH PRELIMINARY PRODUCT SPECIFICATION Z86E61/E63 CMOS Z8® 16K/32K EPROM MICROCONTROLLER FEATURES • 8-Bit CMOS Microcontroller ■ High Voltage Protection on High Voltage Inputs ■ 40-Pin DIP, 44-Pin PLCC Style Packages

Contextual Info: PRELIMINARY PDM34089 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter Features n n n n n n n n n n n n n n n Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors Single 3.3V power supply Mode selectable for interleaved or linear burst:

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

S98WS512

Contextual Info: S98WS512PE0FW005 Stacked Multi-chip Product MCP 512 Mbit (32M x 16-Bit) Stacked Burst Mode, Simultaneous Read/Write Flash Memory with 256 Mbit (16M x 16-bit) Mobile SDRAM on Shared Bus S98WS512PE0FW005 Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

X009

Abstract: MGAB A10 fbnl MGAB
Contextual Info: TEMx28 Device 21/28 Channel Dual Bus High Density Mapper TXC-04222 DESCRIPTION • Add/drop up to 28 E1, DS1, or VT/TU payloads from two add and two drop STM-1/VC4, STS-3 buses • Add bus and drop bus timing modes • Cross mapping applications DS1 mapped to/from

Contextual Info: H I T A C H I / LOGIC/ARRAYS/MEM S IE ]> • HN28F4001 Series D01753S 2TT ■ H IT 2 Preliminary 4M 512K x 8-bit Flash Memory ■ DESCRIPTION Th^ Hitachi HN28F4001 is a 4-Megabit CMOS Rash Memory organized as 524,288 x 8-bit. The HN28F4001 is capable of in-system electrical chip and block erasure and

Contextual Info: IS61C632A m i 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM SEPTEMBER 1997 FEATURES DESCRIPTION • The I S S I IS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

AT25DL081

Contextual Info: Atmel AT25DL081 8-Mbit, 1.65V Minimum SPI Serial Flash Memory with Dual-I/O Support DATASHEET Features  Single 1.65V - 1.95V supply  Serial Peripheral Interface SPI compatible    Supports SPI Modes 0 and 3 Supports Atmel RapidS operation

SBP9989

Abstract: U555 AFG MARKING CODE architecture diagram for 8080 im 1117 marking S98 MIL-M-38510 part marking MICROCIRCUIT PJ 1179 0c55696
Contextual Info: I QUALIFICATION I REQUIREMENTS I REMOVED MIL-M-38510/465A 8 August 1986 I I I Su p e r s e d i n g MIL-M-38510/465 USAF 20 October 198? MILITARY SPECIFICATION MICROCIRCUITS DIGITAL, INTEGRATED INJECTION LOGIC (I 2 L), PARALLEL 16-BIT MICROPROCESSOR, MONOLITHIC SILICON

C5R5

Abstract: Western Digital 68-PIN WD83C580A
Contextual Info: WD83C580A PC Bus Interface Controller FEATURES • Direct interface to IBM PC1" expansion bus for most I/O adapter functions * o o' O y J S. o • Software enable for PC interrupt request • Software selection of PC DMA channels n / < o o • Handshaking control for two DMA channels on

FM33256B

Contextual Info: FM33256B 256-Kbit 32 K x 8 Integrated Processor Companion with F-RAM 256-Kbit (32 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) ❐ Logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM25V02 256-Kbit 32 K x 8 Serial (SPI) F-RAM 256-Kbit (32 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

R5F5631

Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
Contextual Info: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D