MOC8111 Search Results

DIN 50014 STANDARD

Abstract: MOC8111 MOC8112
Contextual Info: MOC8111/MOC8112 No Base Connection Phototransistor Optocoupler FEATURES • Current Transfer Ratio MOC8111, 20% minimum MOC8112, 50% minimum • No Base Terminal Connection for Improved Common Mode Interface Immunity • Field-Effect Stable by TRIOS TRansparent IOn Shield

MOC8113

Abstract: MOC8111 MOC8112
Contextual Info: MOTOROLA Order this document by MOC8111/D SEMICONDUCTOR TECHNICAL DATA MOC8111* [CTR = 20% Min] GlobalOptoisolator MOC8112* 6-Pin DIP Optoisolators Transistor Output No Base Connection [CTR = 50% Min] MOC8113 [CTR = 100% Min] *Motorola Preferred Devices

IEC60747-5-2

Abstract: optocoupler supply schematic 6 pin Optocoupler MOC8111M MOC8111SM MOC8111SR2M MOC8111TM MOC8112M MOC8113M
Contextual Info: MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications No Base Connection Features Description • High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for

moc812

Abstract: MOC8113 MOC8111 MOC8111S MOC8111SD MOC8111W MOC8112
Contextual Info: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8111 MOC8112 MOC8113 PACKAGE SCHEMATIC ANODE 1 6 6 N/C 6 CATHODE 2 1 5 COLLECTOR 1 N/C 3 4 EMITTER 6 1 DESCRIPTION The MOC811X series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not

MOC8111

Abstract: MOC8112
Contextual Info: MOC8111/MOC8112 No Base Connection Phototransistor Optocoupler FEATURES • Current Transfer Ratio MOC8111, 20% minimum MOC8112, 50% minimum • No Base Terminal Connection for Improved Common Mode Interface Immunity • Field-Effect Stable by TRIOS TRansparent IOn Shield

Contextual Info: MOC8111X,MOC8112X,MOC8113X MOC8111, MOC8112, MOC8113 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802

MOC8111-X006

Abstract: DIN EN 50014 STANDARD MOC8111 MOC8111-X007 MOC8112 MOC8112-X006
Contextual Info: MOC8111/MOC8112 Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection FEATURES A 1 6 B • No base terminal connection for improved common mode interface immunity C 2 5 C • Long term stability NC 3 4 E • Industry standard dual in line package

moc8

Contextual Info: MOC8111/ MOC8112 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features • No Base Terminal Connection for Improved Common Mode Interface Immunity • Long Term Stability • Industry Standard Dual-in-Line Package Agency Approvals

transistor 6NC

Abstract: CNX82S
Contextual Info: 6 LEADED DEVICES continued Transistor Output with No Base Connection Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emltter, 5-Collector, 6-N.C. (Style 3) Current Transfer Ratio (CTR) % a\ Min Device MOC8101S.F MOC8102S,F MOC8103S,F MOC8104S,F MOC8111S,F CNX82S.F

E244343

Abstract: MOC8111 OPTO610 SFH600-0
Contextual Info: MOC8111 SFH600-0 UL # E244343 Global Supplier of Optoelectronic Solutions UL # E244343 Schematic: Features: 1 6 2 5 3 4 1.Current transfer ratio CTR : min 20% at IF=10mA Vce=10V 2.High isolation voltage between input and output (Viso : 5300Vrms, 7500vPK).

Contextual Info: MOC8111/ MOC8112 VISHAY Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features • No Base Terminal Connection for Improved Common Mode Interface Immunity • Long Term Stability • Industry Standard Dual-in-Line Package Agency Approvals

c8111

Contextual Info: MOC8111/MOC8112 » •’— Infineon No Base Connection Phototransistor Optocoupler technologies Dimensions in inches mm Í 248 (6.30) fai r§i r?i „p;n 256 (6.50) Optocouplers FEATURES • C urrent Transfer Ratio M O C 8111,20% m inim um M O C 8112,50% m inim um

MOC8111-X006

Abstract: DIN EN 50014 STANDARD MOC8111 MOC8111-X007 MOC8112 MOC8112-X006
Contextual Info: MOC8111/MOC8112 Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection FEATURES A 1 6 B • No base terminal connection for improved common mode interface immunity C 2 5 C • Long term stability NC 3 4 E • Industry standard dual in line package

PFU1

Abstract: AS-3439
Contextual Info: [ • O PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MOC8111 MOC8112 MOC8113 DESCRIPTION PACKAGE DIMENSIONS The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î Ä I w t S JU 1 _ L_ _ ip 8.89 8.38 FEATURES 0.2 High isolation voltage

Contextual Info: SIEMENS MOC8111 PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER FEATURES • • • • • • • C urrent Transfer Ratio 20% Min. No Base Terminal Connection fo r Improved Common Mode Interface Im m unity Field-Effect Stable by TRIOS TRansparent lOn Shield

MOC8113

Abstract: E91231 MOC8111 MOC8111X MOC8112 MOC8112X MOC8113X vce 500v NPN Transistor
Contextual Info: MOC8111X,MOC8112X,MOC8113X MOC8111, MOC8112, MOC8113 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802

Contextual Info: MOTOROLA Order this document by MOC8111/D SEMICONDUCTOR TECHNICAL DATA ® TO VD E UL CSA SETI SEM K O DEMKO NEMKO BABT G lobalO ptoisolator 6-Pin DIP Optoisolators Transistor Output No Base Connection MOC8111* MOC8112* MOC8113 [C TR = 20% Min] [C TR = 50% Min]

MOC8113

Abstract: E91231 MOC8111 MOC8111X MOC8112 MOC8112X MOC8113X
Contextual Info: MOC8111X,MOC8112X,MOC8113X MOC8111, MOC8112, MOC8113 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802

IEC60747-5-2

Abstract: moc812 MOC8111M MOC8111SM MOC8111SR2M MOC8111TM MOC8112M MOC8113M
Contextual Info: MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications No Base Connection Features Description • High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for

DIN EN 50014 STANDARD

Abstract: IEC60065 MOC8111 MOC8111-X006 MOC8112 VDE0884
Contextual Info: MOC8111/ MOC8112 Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection Features • No Base Terminal Connection for Improved Common Mode Interface Immunity • Long Term Stability • Industry Standard Dual-in-Line Package • Lead-free component

DIN 50014 STANDARD

Abstract: MOC8111 MOC8112
Contextual Info: MOC8111/MOC8112 No Base Connection Phototransistor Optocoupler FEATURES • Current Transfer Ratio MOC8111, 20% minimum MOC8112, 50% minimum • No Base Terminal Connection for Improved Common Mode Interface Immunity • Field-Effect Stable by TRIOS TRansparent IOn Shield

Contextual Info: SIEMENS MOC8111 PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER ^ • Current Transfer Ratio 20% Min. • No Base Terminal Connection tor Improved Package Dimensions in inches mm Pin O n e ID. . Common Mode interface Immunity • Field-Effect Stable by TRIOS (TRansparent

Contextual Info: E U PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MOC8111 MOC8112 MOC8113 PACKAGE DIMENSIONS DESCRIPTION The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. db Æ db FEATURES J 4.06 3.81 i l High isolation voltage 5300 VAC RMS—1 minute

Contextual Info: MOC8111 SIEM ENS No Base Connection Phototransistor Optocoupler FEATURES • Current Transfer Ratio 20% Min. • No Base Terminal Connection for Improved Common Mode Interface Immunity • Field-Effect Stable by TRIOS TRansparent lOn Shield • Long Term Stability