j139
Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127
Contextual Info: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 | f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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bd179bd180q0fi4713o-22saa+5j1390395 adc3268127 d transistorh127
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MJ10011
Abstract: S-80W
Contextual Info: M O T O R O L A SC XSTRS/R F 12 E D § b 3 b ? e S M O G Ó S O B T Û | MOTOROLA SEMICONDUCTOR TECHNICAL DATA DARLINGTON HORIZONTAL DEFLECTION TRANSISTOR 8.0 A M P E R E NPN SILICON D ARLINGTON POWER TRANSISTOR . . . specifically designed for use in deflection circuits.
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IR 92 0151
Abstract: MJ12002 MJ-12002 TC204A 4229PL00-3C8
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | fc.3t.72SM GGflSQflfi T f T-J3-/J MOTOROLA SEMICONDUCTOR MJ12002 TECHNICAL DATA D e s ig n e rs D a ta S h e e t 2.5 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR 1500 VOLTS 76 WATTS . . . specifically designed for use in large screen color deflection
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mj1200214-maximumir 92 0151mj-12002+2tc204a4229pl00-3c8
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IRF 450 MOSFET
Abstract: IRF820 IRF821 IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821
Contextual Info: MOTOROLA SC X S T R S /R F 11E D I h3b7ESM 0GÔTP05 {, | MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode S ilicon G ate TM O S These T M O S Power FETs are designed for high
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irf820irf821irf823221a-04+8tq-220abirf 450 mosfetirf820..82172smmtp3n45irf820.821transistor irf 4504570 821
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TA 7092 AP
Abstract: BF 178 TO-39 CASE connection MPQ7092 pj 939 sot 23 PW1 46
Contextual Info: MOTOROLA SC XSTRS/R F 1 Z E I b 3 b 7 2 5 4 0 G ñ b Q 4 7 1 M A X I M U M R A T IN G S Sym bol R a tin g M PQ7091 M PQ 7092 M PÛ 7093 MPQ7091 thru MPQ7093 U n it C o lie cto r-E m itte r V o lt a g e VcEO 150 200 250 Vdc C o lle cto r-B a se V o lt a g e
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pq7091y14smy145mta 7092 ap+4bf 178 to-39 case connectionmpq7092pj 939sot 23 pw1 46
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mj6503 motorola
Abstract: MJ6503 mj6503 transistor MJ6502 MARK B3L MJ-6503
Contextual Info: MOTOROLA SC X S TR S /R F 1 SE D I b 3b ? 2 S4 QQÖMTÖS 2 | MOTOROLA SEMICONDUCTOR MJ6503 TECHNICAL DATA D e siS’ruM's D ata Sheet 8 AM PERE PNP SIUCON POWER TRANSISTOR SWITCHMODE SERIES PNP SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The MJ6503 transistor is designed for high-voltage, high-speed,
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mj6503mj6503 motorolamj6503 transistormj6502+2mark b3lmj-6503
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transistor 12E
Abstract: sot 23 PW1 46 OJ31 MPQ6600 7905 to-92 2T118 sot23 PW1 il038 40mR MPQ*6600
Contextual Info: MOTOROLA SC XSTRS/R 12E F 0 I b3fc,72S4 M A X I M U M R A T IN G S Sym bol MPÛ6100 MPQ6600 MPQ6100A MPQ6600A Unit Collector-Emitter Voltage VCEO 40 45 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage Veb o 6.0 Vdc ic 50 m Adc Rating Collector Current — Continuous
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mpq6600mpq6100ampq6600ampq6100+13pv3-25o-116dimens10n-ngy145mtransistor 12esot 23 pw1 46oj317905 to-922t118sot23 pw1il03840mrmpq*6600
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MOC70
Abstract: k 1094 transistor MOC70H1 motorola transistor 307 transistor 701 2k transistor 1094
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MOC70 Series S lo tte d O p tic a l S w it c h e s T ransisto r Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili con N PN phototransistor in a m olded plastic housing. A slot in the housing between the
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354g-01moc70k 1094 transistormoc70h1+3motorola transistor 307transistor 701 2ktransistor 1094
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2N3422
Abstract: 2N3442 2n4347 2N4327 C0440
Contextual Info: MOTOROLA SC XSTRS/R F 1EE D | b3b72SM G0â44b0 MOTOROLA r - 3 3 -/ 3 T | 2N3442 2N4347 SEMICONDUCTOR TECHNICAL DATA 5.0 AND 10 AMPERE POWER TRANSISTORS NPN SILICON HIGH-POWER INDUSTRIAL TRANSISTORS 1 2 0 ,1 4 0 V O L T S 1 0 0 ,1 1 7 W A T T S NPN silicon power transistors designed for applications in
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b3b72sm2n34422n43472n3422+22n4327c0440
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