MJ6503 Search Results

mj6503 motorola

Abstract: MJ6503 mj6503 transistor MJ6502 MARK B3L MJ-6503
Contextual Info: MOTOROLA SC X S TR S /R F 1 SE D I b 3b ? 2 S4 QQÖMTÖS 2 | MOTOROLA SEMICONDUCTOR MJ6503 TECHNICAL DATA D e siS’ruM's D ata Sheet 8 AM PERE PNP SIUCON POWER TRANSISTOR SWITCHMODE SERIES PNP SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The MJ6503 transistor is designed for high-voltage, high-speed,

MJ6503

Abstract: MJ-6503
Contextual Info: DATA SHEET MJ6503 PNP SILICON POWER TRANSISTOR JEDEC TO-3 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR MJ6503 is a silicon PNP transistor designed for high voltage, high speed switching in inductive circuits. MAXIMUM RATINGS TC=25°C unless otherwise noted

transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min

Contextual Info: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

pmd10K80

Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

ST575

Abstract: transistor TIP 350 transistor TIP 662 mj power transistor TIP 22 transistor ST12005 ST8505 ST10023 ST10011 ST8500
Contextual Info: SEM ICO N DUCTO R TECHNOLOGY, INC._ S E M IC O N D U C T O R TECH N O LO G Y DSE D I _ _ 3131 S .E. Jay Street Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 _£> j FAX 407-286-8914 fll3bM5û 0DGQS5S • NPN & PNP HIGH VOLTAGE SILICO N HIGH POWER T R A N SIST O R S

mpsu57 cross

Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60

2N5875

Abstract: BDX85C LM3661TL-1.40 BU208 2N5886 BDW52B
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

MJE13005A

Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
Contextual Info: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175

20N15

Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Contextual Info: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.

BUT16

Abstract: MJ12005 MJ4247 BU800 MJ423 MJ-4247 MJ10011 BDX66 MOTOROLA mj6503 motorola MJ4237
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL TO-204AA Formerly TO-3 CA SE 11-01, 11-3 — 40 mil pins CASE 1-04, 1-05 — 40 mil pins M O D IFIE D TO -3 CASE 197-01 — 60 mil pins STYLE 1: PIN 1. 2. C A SE. BASE EM ITTER C O LLE C T O R R e s is tiv e S w itc h in g

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

MJ6503

Abstract: PMD10K100 MJ1000 MJ4502 EQUIVALENT PMD16K100 PMD1703K PMD17K100 MJ10012 MJ802 PMD10K40
Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. NPN IC PNP BUY69C (A) MAX PD BVCBO BVCEO *BVCEV (W) (V) (V) MIN MIN hFE @ IC VCE(SAT) @ IC (A) MIN MAX (V) MAX (A) fT *TYP (MHz) MIN 10 100 500 200 15 - 2.5 3.3 8.0 10* MJ802 MJ4502 30 200 100 90 25 100 7.5

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

LM3661TL-1.40

Abstract: BUW36 2N6253 2n6545
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

but16

Abstract: MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 MJ423 BDX66 MOTOROLA MJ16028 BDX65B motorola MJ10006
Contextual Info: POWER TRANSISTORS — BIPOLAR METAL continued T0-204AA (FORMERLY TO-3) (continued) Resistive Switching lcCont Amps Max 8 VcEO (sus) Volts Min Device Type NPN PNP fr MH? Amp Max Max Amp Min (al 25°C Watts MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A

2N5302 EB

Abstract: 2N1463 2n4271
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154