MJ3001 Search Results

Contextual Info: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)

MJ3001

Abstract: MJ3000 MJ2501 transistor mj3001 MJ2500 MJ3001 equivalent MJ3000/MJ3001
Contextual Info: MJ2500 - MJ2501 PNP MJ3000 - MJ3001 NPN SILICON EPITAXIAL-BASE DARLINGTON The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications.

Contextual Info: SEMELAB LTD 37E D Û1331Ô7 DGGGDbO 1 • SMLB m ‘ Î'rîwî. Type No. Reliability Polarity Option MJ900 MJ901 MJ2500 MJ2501 MJ2955 SCREEN SCREEN SCREEN SCREEN CECC PNP PNP PNP PNP PNP MJ3000 MJ3001 MJ3201 HJ3202 MJ3238 SCREEN SCREEN HX-REL HI-REL HI-REL

motorola MJ3000

Abstract: transistor MJ2501 MJ3000 circuit mj2501 mj3000 MJ3001 transistor mj3001
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA ‘"W M f a y f lf t w a n g o g s M aKM SA •M -H H ttM A ) Medium-Power Complementary Silicon Transistors PNP MJ2500 MJ2501* NPN MJ3000 MJ3001* . . . for use as output devices in complementary general purpose amplifier applica­

mj3001

Abstract: mj2501 MJ3000 AIN60
Contextual Info: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are

Contextual Info: rz 7 SCS-THOM SON MJ2501 i*! i[LI ¥[M0 gS MJ3001 COMPLEMENTARY SIUCOnTto W ^ TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3

Contextual Info: MJ3001 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)400uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k

mj3001

Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u

MJ3001

Abstract: transistor mj3001 mj2501 MJ3001 equivalent SGS-Thomson
Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power

transistor mj3001

Abstract: j3000 MJ3001 transistor MJ2501 MJ2500 MJ2501 AN-415 J2500 J2501 MJ3000
Contextual Info: MJ2500, MJ2501, MJ3000, MJ3001 continued E L E C T R IC A L C H A R A C T E R IS T IC S (Tc = 2S°C unless otherwise noted)_ _ _ | Characteristic | Symbol | M in | M ix I O F F C H A R A C T E R IS T IC S

Contextual Info: SGS-THOMSON MJ2501 MJ3001 RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2501 is a silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3

transistor mj3001

Abstract: MJ2501 MJ3001
Contextual Info: MJ2501 MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES • ■ APPLICATION AUDIO POWER AMPLIFIER ■ DC-AC CONVERTER ■ EASY DRIVER FOR LOW VOLTAGE DC MOTOR ■ GENERAL POWER SWITCHING

transistor mj3001

Abstract: TRANSISTOR 2SC 635 MJ3000 MJ3000 circuit MJ2501 MJ3001 J3000 j-2500 MJ2500 AN-415
Contextual Info: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose

transistor MJ2501

Abstract: transistor mj3001 MJ2501 MJ3001
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 1000 Min @ IC = -5A ·Collector-Emitter Breakdown VoltageV(BR)CEO= -80V(Min) ·Complement to type MJ3001

MJ3001

Abstract: mj3000
Contextual Info: SGS-THOMSON MJ2500/MJ2501 MJ3000/MJ3001 ÜLieTOOffäDOl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are

MJ3001

Abstract: MJ2501 MJ3001 equivalent Premier Devices transistor mj3001 npn power darlington to-3 150w
Contextual Info: MJ2501 & MJ3001 10A, 150W, 80V Features: • Medium-power complementary Silicon Transistors for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain hFE = 1000 Typical at IC = 5.0A. • Monolithic construction with built Base-Emitter Shunt Resistors.

npn darlington transistor 150 watts

Abstract: transistor mj3001 MOTOROLA POWER TRANSISTOR MOTOROLA TRANSISTOR NPN bipolar junction transistors max hfe 2000 MJ2501 MJ3001 transistor MJ2501 MJ3001 motorola transistor mj3001 to-3
Contextual Info: MOTOROLA Order this document by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN Medium-Power Complementary Silicon Transistors MJ3001 Motorola Preferred Devices . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE

Contextual Info: MJ3001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: MJ3001 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

transistor darlington package to.3

Abstract: transistor mj3001 MJ2501 transistor mj3001 to-3 MJ3001 equivalent transistor darlington package to.3 3 pin MJ3001 150w darlington transistor to3 package pnp 150w darlington transistor to3 package
Contextual Info: MJ2501 - PNP MJ3001 - NPN SEME LAB MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . COMPLEMENTARY DARLINGTON POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . APPLICATIONS 1 1 .4 3 (0 .4 5 0 )

MJ2500

Abstract: MJ2501 MJ3001 MJ3000 MJ3000/MJ3001
Contextual Info: MJ2500 MJ2501 MJ3000 MJ3001 PNP NPN SILICON COMPLEMENTARY TRANSISTORS POWER DARLINGTON 10 AMPERES, 60-80 VOLTS semicomluctc * Central Semiconductor Corp. 145 Adams Avenue Hauppauge, New York 11 788 JEDEC T0-3 CASE DESCRIPTION The CENTRAL S EM ICONDUCTOR MJ2500, MJ3000 Series are mediurn - power Complementary Silicon

j3001

Abstract: I/J3001-3002 MJ2501 MJ3000M
Contextual Info: SGS-THOMSON RflDeiRi IILiera [S!lD ei MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors

2SC 1177

Abstract: npn darlington transistor 150 watts MJ2500 MJ2501 MJ3000 MJ3001 darlington complementary power amplifier MJ3000 circuit MJ3000/MJ3001
Contextual Info: MJ2500, MJ2501 PNP SILICON MJ3000, MJ3001 NPN 10 A M PERE D A R L IN G T O N POWER T R A N SIST O R S C O M PLEM EN T A R Y SILIC O N MEDIUM-POW ER C O M PLEM EN TA R Y SILIC O N T R A N SIST O R S . 6 0 -8 0 V O L T S 150 W A T T S for use as o u tp u t devices in co m ple m e n tary general purpose

MJ2501

Abstract: MJ3001 MJ3000 MJ2500 P003N
Contextual Info: MJ2500/MJ2501 MJ3000/MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n MJ2501 AND MJ3001 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The MJ2500, and MJ2501 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are