MJE240
Abstract: MJE243 MJE250 MJE244 MJE251 MJE241 MJE242 MJE252 MJE253 MJE254
Contextual Info: Datasheet Central MJE240 THRU MJE244 NPN MJE250 THRU MJE254 PNP Semiconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO— 126 GASE Manufacturers of World Class Discrete Semiconductors
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MJE240
Abstract: MJE250 MJE251 MJE241 MJE242 mje244 2sc 834 mje253 MJE254 mje283
Contextual Info: MJE240 thru MJE244 NPN SILICON MJE250 thru MJE254 PNP C O M P L E M E N T A R Y SILICON POWER PLA S TIC T RAN SISTO RS 4 A M PE R E . . . designed fo r lc»w pow er audio am plifier and low-current, high speed switching applications. • High C o llector-Em itter Sustaining Voltage —
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of IC 4151
Abstract: MJE240 IC HE 06 R mje250 mje2501 mje244 mje251 MJE241 AN-4151 MJE242
Contextual Info: MJE240 thru MJE244, MJE250 thru MJE254 continued E L E C T R I C A L C H A R A C T E R I S T I C S ( T ^ ” 2 5°C unless otherwise noted) | | C haracteristic Sym bol j M in j M ix | UnK~ O F F C H A R A C T E R IS T IC S C o lle ctor-E m itter Sustaining V oltage
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mje240mje244mje250mje254+9mje241mje242mje251mje252mje243of ic 4151ic he 06 rmje2501an-4151
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c
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powec rm 1110
Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor
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111iimz5558z5555z5556+11mz5557powec rm 1110rm 1100 powecmpc1000transistors jx 6822 ainverter welder 4 schematicsaa 14ztransistor si 6822stg 8810pl 15z diodegermanium transistor
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492
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MHW591
Abstract: MHW592 MRF475 MHW591 equivalent motorola MHW592 MRF476 equivalent motorola application note AN-758 MRF476 fair-rite 2643006301 mrf475 transistor
Contextual Info: Order this document by AN779/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN779 LOW-DISTORTION 1.6 TO 30 MHz SSB DRIVER DESIGNS Prepared by: Helge O. Granberg RF Circuits Engineering GENERAL CONSIDERATION Two of the most important factors to be considered in
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an779/dan779mhw591mhw592+8mrf475mhw591 equivalentmotorola mhw592mrf476 equivalentmotorola application note an-758mrf476fair-rite 2643006301mrf475 transistor
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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atv5030atv5090batv6031atv6060h+15atv7050bal99lt1bas16lt1bas21lt1bav70lt1bav74lt1mled96brx49 scrmrf549mrf660mrf548mmbr2857lt1cr2428mpf3822mrf548 motorola
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B 834 Y
Abstract: 2sc 834 mje251 MJE240 MJE222 MJE241 MJE250 MJE242 MJE230 MJE224
Contextual Info: MJE220 thru MJE225 NPN SILICON MJE230 thru MJE235 PNP C O M PLEM EN TA R Y P L A S T IC SILIC O N POWER T R A N S IS TO R S 4 A M PER E POWER T R A N S IS TO R S . . . designed for low power audio am plifier and low current, high speed switching applications.
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MJE13005A
Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
Contextual Info: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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darlington bd139
Abstract: MJE222 mje520
Contextual Info: Power Transistors TO-126 Case TYPE NO. ic PD BVCBO A (W) m m BVCEO • @ le U FE (mA) Bottom View V C E (S A T ) @ 1C (V) (A) *T (MHz) MIN MIN MIN MAX 2N4921 2N4918 1.0 30 40 40 30 150 500 0.6 1.0 3.0 2N4922 2N4919 1.0 30 60 60 30 150 500 0.6 1.0 3.0 2N4923
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MJE520 datasheet
Abstract: MJE240 MJE520 equivalent MJE720 MJE222 Power Transistors TO-126 Case MJE181 MJE182 MJE200 MJE220
Contextual Info: Power Transistors TO-126 Case Continued Top View TYPE NO. IC (A) PD (W) BVCBO (V) BVCEO (V) hFE MIN MIN MIN MAX Bottom View @ IC (mA) VCE(SAT) (V) @ IC (A) MAX fT (MHz) NPN PNP MAX MIN MJE180 MJE170 3.0 15 60 40 50 250 100 0.3 0.5 50 MJE181 MJE171 3.0 15
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je240
Abstract: MJE241 MJE263 mje240 JE250 MJE244 mje260 mje250 mje252 mjE26
Contextual Info: MOT OR CL A SC ÎEE D I b3b?254 QGÖS315 b | X S T RS /R F NPN MOTOROLA SEMICONDUCTOR T -3Î-07 T-33-17 TECHNICAL DATA M1E240, MJE241 MJE243, MJE244 PNP MJE250 thru MIE254 COMPLEMENTARY SILICON POWER PLASTIC TRANSISTORS 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON
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2N6410
Abstract: MJE251 MJE170 motorola 2N6412 2N6415 MJE250 MJE241 parameters S transistor NPN motorola MJE171 MJE222
Contextual Info: MOTORÔLA~SC iDIODES/OPTOJ 34 6 3 6 7 2 5 5 M O T O R O L A SC DE | t 3 b ? S S S O D B T T m {D I O D E S / O P T O 34C 4 37964 SILICON POWER TRANSISTOR DICE continued) MJEC244 DIE NO. — NPN LINE SOURCE — PL500.E22 PNP NPN ÉSkâSk Complimentary transistors
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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MJE241
Abstract: Power Transistors TO-126 Case MJe340 350 MJE222 mje520
Contextual Info: Power Transistors TO-126 Case Continued Top View TYPE NO. •c (A) PD (W) MAX bvcbo BVCEO hi *E @ lc (V) 00 mm MIN MIN MAX (*BA) Bottom View VCE(SAT) 1C (V) (A) fT (MHz) NPN PUP MJE180 MJE170 3.0 15 60 40 50 250 100 0.3 0.5 50 MJE181 MJE171 3.0 15 80
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B0591
Abstract: RCA1C12 b0253 RCA1C03 rca*1C12 2sc2665 TIP512 BU304
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 2SC4008 2S01135 2SB1304 (A) 2S01255 2S01269 2S05260 044Cll 2S0526Y :gg~~~4 25 30 2S01223 2S01370 S1236 S1236 1571-1020 1571-1025 MJE244 B0591 ~~6~~9 35 40 2S01586M MJE243 2S01137 RCA1C03 2S01586L 2S01586K
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o-220o-247variu-24fvarot-186+9o-220abb0591rca1c12b0253rca1c03rca*1c122sc2665tip512bu304
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MJE370
Contextual Info: Power Transistors TO-126 Case Continued Top View TYPE NO. NPN PNP MJE180 MJE170 ic PD (A) (W) MAX 3.0 15 hi :E BVCBO BVCEO (V) 00 MIN MIN 60 @ lc (mA) Bottom View V C E (S A T ) @ I C (V) (A) MAX fT (MHz) MIN MIN MAX 40 50 250 100 0.3 0.5 50 250 100 0.3
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4l30524l3056wiring diagram audio amplifier ic 6283germanium+8transistor shortform datasheet & cross referenceshalbleiter index transistor2n5160 motorolatransistor itt 29071n51592n 5574inverter welder 4 schematicdiagrams de ic lg 8838
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0hf400hf600hf806fp10+126f10070hf10uaa2001mc8500micromodule m68mm191n938874als6432n6058mc1450262n5160 motorolamc3340 equivalentpn3402
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Power Transistors TO-126 Case
Abstract: MJE240 MJE520 datasheet MJE520 equivalent mje521 equivalent MJE243 equivalent BD139 N BD234 BD683 MJE234
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A
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o-1262n49212n49222n4923+162n51902n51912n51922n56552n56562n5657power transistors to-126 casemje240mje520 datasheetmje520 equivalentmje521 equivalentmje243 equivalentbd139 nbd234bd683mje234
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thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y
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11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7optek a400 817sprague 513dsprague 926csprague 195prapa relay 12vdctriac tag 8948mascot 719
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