MOC70 Search Results

MOC70P3

Abstract: MOC70 DS300009 MOC70P2 MOC70P1 MOC70PX
Contextual Info: MOC70P1 / MOC70P2 / MOC70P3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH PACKAGE DIMENSIONS DESCRIPTION 0.510 [12.95] The MOC70PX consists of an infrared light emitting diode coupled to an NPN silicon phototransistor packaged into an injection molded housing. The

transistor k 4110

Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Contextual Info: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­

TIC 1160

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC70W1 MOC7QW2 Slotted Optical Sw itch es Transistor Output These devices consist of two gallium arsenide infrared emitting diodes facing two NPN silicon phototransistors across a 0.100" wide slot in the housing. Switching takes

C701 T

Abstract: c701 c703 C701 transistor
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MOC70 Series S lo tte d O p tic a l S w it c h e s •M O C 70T 1 «od M O C 7 0 U 1 T ra n sisto r O u tpu t are M o to ro la Preferred D evices T h e s e d e v i c e s e a c h c o n s i s t o f a g a l l i u m a r s e n i d e in f r a r e d e m it t in g d io d e f a c i n g a s i li c o n

OC70

Abstract: C703 diode ev C703 MOC70
Contextual Info: MOTOROLA h SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­ con NPN phototransistor in a molded plastic housing. A slot in the housing between the

dual infrared transistor

Abstract: MOC70W1 MOC70W1 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MOC70W 1 MOC7QW 2 S lo tte d O p tic a l S w itc h e s T ransistor Output These devices consist o f tw o gallium arsenide infrared em itting diodes facing tw o NPN silicon phototransistors across a 0.100" w ide slot in the housing. Sw itching takes

MOC70

Abstract: k 1094 transistor MOC70H1 motorola transistor 307 transistor 701 2k transistor 1094
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MOC70 Series S lo tte d O p tic a l S w it c h e s T ransisto r Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­ con N PN phototransistor in a m olded plastic housing. A slot in the housing between the

MOC7

Abstract: MOC70P1 MOC70P3 OPTICAL INTERRUPTER MOC70P2 MOC70P
Contextual Info: MOC70P1, MOC70P2, MOC70P3 Phototransistor Optical Interrupter Switch Features Description • No contact sensing The MOC70PX consists of an infrared light emitting diode coupled to an NPN silicon phototransistor packaged into an injection molded housing. The housing is

CNY37

Abstract: MCP3040 4n33 and 4n35 mct81 MRD901 4N25 CROSS MOC70T-1 MOC70T1 moc3020 datasheet application notes CQX47
Contextual Info: CR104/D GENERAL INSTRUMENT-TO-MOTOROLA OPTOELECTRONICS CROSS REFERENCE ISOLATORS General Instrument MOTOROLA Code General Instrument MOTOROLA Code 4N25, A 4N25, A A MCP3009, 10 MOC3009, 10 A 4N26 4N26 A MCP3011, 3011A MOC3011 A 4N27 4N27 A MCP3012 MOC3012

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2 pin phototransistor P 250

Contextual Info: [*n OPTOELECTRONICS PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES - .500 12.70 -•> Gap W id th (m m ) A p e r tu r e W id th L E D /S e n s o r Test C o n d itio n s OPB804 3.81 QVE11233 •C (O N ) BVceo •f/V ce (m A ) m in (V ) m in M ax R a tin g

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

DIODE ITT 310

Abstract: OC70P2 transistor 1p3
Contextual Info: c*o OPTOELECTRONICS |* _ PH O TO TR A N SISTO R O P T IC A L IN T E R R U P T E R S W IT C H ES •Q £ h* .312 7.83 .j (- 1 2 4 (3 151 J-.1P3 ¡2.6) NOM .122(3.10) I T1 C ia p Ù o e r îiii'e Pai s W itt! ' ■/JniU' M u m b i; tm in . ._££>/S e iì a s .,

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

CNY36

Abstract: high resolution phototransistor h21A1 sensor PHOTOTRANSISTOR H22B1 equivalent opto transistor moc phototransistor datasheet H21B3 H21A1 H22LOI
Contextual Info: Optoelectronics Transmissive Opto Sensors Test Conditions Part Number IF mA VCE (V) IC (ON) (mA) min Aperture Width (mm) BVCEO (V) min Output Emitter Sensor Gap Width (mm) Slotted Switch H21 (Analog – Standard Resolution) CNY28 20 10 0.2 30 Phototransistor

4n35 optocoupler spice model

Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

Contextual Info: [*q OPTOELECTRONICS PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES G ap W id th A p e r tu r e W id th Test C o n d itio n s m A (V ) M ax R a tin g (m m ) L E D /S e n s o r I f /V c e m in m in T a b le G ap W id th (m m ) A p e r tu r e W id th L E D /S e n s o r

MOC70W2

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M O C70W 1 * M O C70W 2 Slotted Optical Sw itch es Transistor Output * M o t o ro la Preferred D evice These devices consist o f tw o g alliu m arsenide infrared e m itting diodes facing tw o NPN silicon phototransistors across a 0.100" w ide slot in the housing. S w itching takes place when

Contextual Info: CEMENTED WIRE WOUND & METAL OXIDE FILM RESISTORS Cement type resistors are fille d and sealed w ith nonflamm able and heat resistant cement in a ceramic case. This type o f resistor is developed fo r use wherever economical flame p ro o f resistors are required. It w ill not support com bustion.

MAN6760 function

Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
Contextual Info: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available

MC0628R

Abstract: mc0628 MC0628R replacement FAIRCHILD SEMICONDUCTOR Fairchild cross KA3846 FDD8896 "drop-in replacement" FQPF3N60C FQP50N06 equivalent FDS8884
Contextual Info: Discontinued Product s 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions