BVOE Search Results

PIN CONFIGURATION 2N2222

Abstract: 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp
Contextual Info: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION bvc b o bvoeo bvebo <CBO VCBQ 00 (V) (VÏ <nA) MIN MIN MIN MAX *»f e 0 IC (iffA) (V) MIN VCE(SAT) <V) ® 'C (m Ai MAX c ob *T NF *0 FF COMMENTS

Contextual Info: VP0645 VP0650 0FàSupertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON BVoes (max) -450V 30£! -500V 30£i Order Number / Package Si b v dss/ TO-39 TO-92 TO-220 DICE* -0.2A VP0645N2 VP0645N3 VP0645N5 VP0645ND -0.2A VP0650N2

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

Contextual Info: E Q IPIOELECinOllES SLOTTED OPTICAL SWITCH QVB SERIES The QVB series of switches is designed to allow th e user SEE NOTE 3 m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN photo­ transistor across a .125" 3.18 m m gap. A unique

Contextual Info: te s SLOTTED OPTICAL SWITCH DPTDELECTROHICS CNY29 J 11 PACKAGE DIMENSIONS SYMBOL r-°T M ILLIM ETER S M IN. t r 3 - i* > r L b’ SECTIO N X - X T IN C H E S MIN. 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119 .125 .024 .030 a 2 b, D D, d2 e2

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

IR2419

Contextual Info: IR2419 6-Unit 400mA Darlington Transistor Array I Description The IR2419 is a 6-drcait driver. The Internal damping diodes enable the IC to drive the inductive load directly. Pin Connections in , Cl _ Features . 1. High output current* I<xn = 400mA MAX.

136q

Contextual Info: SSH5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ - 800V ^DS on = 2.2 Q BVDss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA(M ax.) @

transistor KJJ

Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
Contextual Info: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

Contextual Info: MAT-04 PMI M ATCH ED MONOLITHIC Q UAD TRANSISTOR P re c isio n M o n o lith ic s Inc PIN CONNECTIONS FEATURES • • • • • • • Low Offset Voltage . 200|xV Max High Current Gain . 400 Min

bv0T

Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­

DTA114TA

Contextual Info: h "7 > v DTA114TU/DTA114TK/DTA114TS/DTA114TF DTA114TL/DTA114TA/DTA114TV $ /Transistors D TA 114T U /D T A 1 14 T K /D T A 114TS D TA 114T F /D T A 114T L /D T A 114TA D TA 114TV I y -5VTransistor Switch Digital Transistors Includes Resistors • £tff2 \t"}iG3/D im en sio ns (U n it: mm)

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRONICS 0PB862N51/0PB862N55 Th e O P B 862N series of switches is designed to allow the SEE NOTE 3' user m axim um flexibility in applications. Each switch II consists of an infrared em itting diode facing an NPN 1 s phototransistor across a .125" 3.18 m m gap. A unique

ild206 application note

Abstract: ILD205 ILD207 D205 SOIC8 ILD206 ILD211 ILD213 RS481A d205 siemens
Contextual Info: SIEMENS ILD205/206/207/211/213 DUAL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES • Two Channel Coupler • Industry Standard SOIC-8 Surface Mountable Package * Standard Lead Spacing of .05" * Available in Tape and Reel Option Conforms to EIA Standard RS481A

Contextual Info: | FORWARD INTERNATIONAL ELECTRONICS L ID . 2N3906 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to 2N3904 * Collector-Emitter Voltage: Vceo=-40V * Collector Dissipation; Pc=625 mW Ta=25°C ABSOLUTE MAXIMUM RATINGS at Tamb=25*C

Contextual Info: 8050A SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA M O T O R D R IV E R * Complement to 8550A * Collector C urrent: Ic=1500mA * Collector D issipation: Pc=lW Ta=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C

Contextual Info: SSW/I2N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 uA M ax. @ VDS= 600V

ITT Voltage Regulator

Contextual Info: KSA1614 PNP EPITAXIAL SILICO N TRANSISTOR LOW FREQUENCY POW ER AMPLIFIER POWER REGULATOR • Collector Base Voltage : V cbo = - 80V • Collector Dissipation : Pc=20W TC- 2 5 V ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit V cbo VcBO Symbol -8 0 -5 5

ST2009

Abstract: ST2006 H24B1 H24B2 ST2012 ST4004 H24BJ st2014
Contextual Info: EXl aPTQELECiaONiCS H24B1 H24B2 DESCRIPTION PACKAGE DIMENSIONS .50 REF D + The H24B series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing compatible with a dual in-line package.

Contextual Info: POLYFET R F DEVICES 47E D • 7 a i l D m OOOOGflH ñ ■ PLYF -T-39-01 POLYFET RF DEVICES F1215 PATENTED GOLD METALIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse

9C1S

Contextual Info: SSW/Ï5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 800V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA Max. @ VM = 800V

transistor f422

Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high

2N3927

Abstract: 2N3926 SD1072 SD1062
Contextual Info: H n M T 5 M/ m I# IV IIC rO S e iI P ro g re s s P o w e re d b y T e c h no log y Commerce Drive Montgomeryville, PA 18936Tel: 215 631 -9840 N3926/2N3927 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS • ■ ■ ■ ■ . ■ FREQUENCY