H24B2 Search Results

H24B1

Abstract: H24B2 H24B3
Contextual Info: H24B1, H24B2, H24B3 4 PIN OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT Dimensions in mm 1 DESCRIPTION The H24B series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo darlington in a plastic package. 2 + D

Contextual Info: 3875081 G E SO LID 01E STATE 1 9 8 10 D Optoelectronic Specifications_ HARRIS SEMICOND SECTOR 37E D H 4302271 0G27272 A E l HAS Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Em itting Diode & NPN Silicon Photo-Darlington Amplifier The GE Solid State H24B series consists of a gallium arsenide

diode 6t6

Abstract: H24B1 H24B2
Contextual Info: G E SOLID STATE o u r «/vw « -wi — -— 01 - — DE|3fi?SDfil D D n a i D S | Optoelectronic Specifications. T - q \ ' Z $ Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The G E Solid State H24B series consists o f a gallium arsenide

ST2009

Abstract: ST2006 H24B1 H24B2 ST2012 ST4004 H24BJ st2014
Contextual Info: EXl aPTQELECiaONiCS H24B1 H24B2 DESCRIPTION PACKAGE DIMENSIONS .50 REF D + The H24B series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing compatible with a dual in-line package.

st4004

Contextual Info: m O fLEtïM IIÜ H24B1 H24B2 .50 REF + D E The H24B series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a low-cosi plastic package with lead spacing compatible with a dual in-line package.

H24B2

Abstract: OPTOCOUPLER 10v output OPTOCOUPLER 4-PIN application note H24B1
Contextual Info: PHOTODARLINGTON OPTOCOUPLER H24B1 H24B2 PACKAGE DIMENSIONS 0.375 9.52 MAX 1 2 + D E + 4 3 0.030 (0.76) 0.019 (0.50) 0.250 (6.35) MAX 0.030 (0.76) 0.019 (0.50) 0.35 (8.89) MAX 0.300 (7.62) MIN X X 0.315 (8) 0.285 (7.24) 0.020 (0.50) 0.020 (0.50) SCHEMATIC

st4004

Abstract: ASEA H24B1 H24B2 ST2006
Contextual Info: [sO OPTOELECTRONICS H24B1 H24B2 PACKAGE DIMENSIONS DESCRIPTION The H24B series consists of a gallium arsenide infrared em itting diode coupled with a silicon phototransistor. The devices are housed in a low -cost plastic package with lead spacing com patible w ith a dual in-line package.

Contextual Info: Optointerrupter Specifications H24B1, H24B2 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H 24B s e r ie s c o n s i s t s o f a g a lliu m a rs e n id e , in fra r e d e m it t in g d io d e c o u p l e d w ith a s i l i c o n D a r l i n g t o n - c o n n e c t e d

H24B2

Contextual Info: OPTOELECTRONICS H24B1 H24B2 PACKAGE DIMENSIONS 0.75 0.60 D + DESCRIPTION The H24B series consists of a gallium arsenide infrared em itting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing com patible with a dual in-line package.

Contextual Info: Photo Darlington High Sensitivity, without Base connection Part 1mA Vce«»/ - m H24B1 1Q0Q lF=5ntA 3 H24B2 400(F=5m A)3 H24B3 750 (lF=5mA) 3 ISPD60 100 ISPD61 500 ISPD62 ISPD63 ISPD64 ISPD65 MOC8020 Photo Darlington Transistor Detector Base Lead Not Connected

b13s7

Contextual Info: ISOCOfl COMPONENTS LTD 45E » • HfiflbSlQ 0Q0D23S fi « I S O T -4 1 -7 3 lf = 20mA < •r V b v ceo 2V Ij.= 1mA m O O VF o Ui Characteristics CD TRANSISTO R FAM ILY VCE|SAT| lp =100uA v CE= io v Test L -0 VCE SAT> lF = 20mA Ip= 20mA Ip= 20mA lc =40pA lc =125 iA 1c =175nA VCE=10V

moc3041 REPLACEMENT GUIDE

Abstract: MOC3041 replacement MOC303 is608
Contextual Info: ISOCOM COMPONENTS LTD ME D • ,m s l n 00Q023b 8 m i ^ Dual Channel 'T - h i -^5 G eneral Purpose Part Number Current Transfer Ratio IF = 10mA MIN <% Features Features ISD-1 ISD-5 ISD-74 MCT6 ; PIV LEO 10 pA Continuous Forward Current M AX mA) isolation

MOC8020

Abstract: 0884 qt
Contextual Info: OPTOELECTRONICS OPTOCOUPLERS P h o t o d a r lin g t o n O u tp u t; G a A s In p u t N o b a s e c o n n e c t io n CTR @ Part Num ber I b v ceo b v e c o 10m A lF(%) min V Pkg CE(SAT) (V) (V) (V) V ISO m ax min min m ax AC[RM S] I A g e n cy A pp rova ls

MOC30211

Abstract: MOC3D62 TLP521 MQC3020 moc30111 4N35 cny17 4N4U
Contextual Info: Mwêi t e i F ÈmUÊmSÆ 4 N 2 5 . 7 H11L3.13 IS3021. 18 1SP824-3.18 MCA2231.15 SFH600-1. 8 4 N 26. 7 H11L4.13 IS4N45.19

H11F1

Contextual Info: IS OC On C O M P O N E N T S LTD 4SE » • 4ûflb510 G D 0 0 2 3 3 7 « I S O High Isolation Opto-Couplers Single Channel, Transistors Output, w ithout Base Connection Part Number IS205 IS206 Current T ransfer Ratio If 10mA M iN <%i Features V D C C ontinuous

Contextual Info: ISOCOH COMPONENTS LTD WM MfiflbSlO 0000236 b • ISO 4SE P OPTOELECTRONIC SWITCHES T R A N S IST O R FA M ILY VF Ip = 60mA 'r V b v ceo lg=1m A 5V Test b v eco lc= IOOjiA V c e =25V lc 0N lc 0N lc °N Ip = 5mA Ip = 20mA Ip = 30mA V ce = 5V VCE = 5V VCE SAT|

pc111 optocoupler

Abstract: PC123 optocoupler qtc 2630 qtc 2531 optocoupler qtc 2631 qtc 2531 PC817 SOP-4 qtc 2731 PC113 optocoupler pc120 optocoupler
Contextual Info: California Eastern Laboratories Optocoupler & Solid State Relay Product Cross-Reference HOW TO USE THIS GUIDE The Cross Reference provides a listing of CEL/NEC’s closest replacement devices to the Manufacturer. The replacement may or may not be an exact replacement, so the customer should consult both data

ISTS875A

Abstract: mct isocom HIIG2 CNY17-2 H11j SFH60 HIIG3 ISTS805
Contextual Info: ISO C O M COMPONENTS LTD 4SE D H ô fib S lO I Photo Darlington 0 0 0 0 5 3 7 4 • IS O 7 = V /-7 / c o n tin u e d High Voltage, with B ase Connection i Part Number Features bvceo C urrent Transfer Ratio IF - 1 m A @ 1mA M IN (V I VCE = 2V M IN (* ) IS660

ISTS201

Abstract: ISTS2001 IS1020 MOC 4N35 IS1100 ists824 IQ4000 triac catalogue MOC 4N25 M003040
Contextual Info: IS0C0I1 COMPONENTS LTD i»5E D Bi MflflbSlQ 0000232 5 • ISO f'L{ |-tf3 Zero Crossing Triac Couplers Single Channel DIP, Zero Voltage Crossing Triac Part Number Features Input Trigger Current V T M *3 V MAX mA MOC3031 15 MOC3032 10 MOC3041 MOC3042 Continuous

LM 8105

Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
Contextual Info: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17

TIL145

Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
Contextual Info: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t

ISTS804

Abstract: h21A1 sensor icpl3700 H21A2 IS2100G ISTS401 ICPL2502 ICPL2601 h24b1 4N35 cny17
Contextual Info: ISOCOH COMPONENTS LTD 4SE D • MfiflbSlO 0000236 b «¡ISO OPTOELECTRONIC SWITCHES VF 'r bvceo Ip = 60mA > to 11 oc > Characteristics lg=1mA Test bveco lc 0N lc °N lc °N Ip = 5mA Ip = 20mA Ip = 30mA VCF = 5V Vce =5V Vce = 5V VCE SAT lE= lOOpA Vce =25V lc = 1.8mA

H11B255

Abstract: TIL113.300 4N29 4N30 4N31 4N32 4N33 CNX48U H11B1 H11B2
Contextual Info: Optoelectronics Products Photodarlington Output; DC Sensing Input CTR @1 mA IF % Part Number BVCEO(V) BVCBO(V) BVECO(V) tR/tF(µs) Min Max Min Min Min Max VISOACRMS (kV) 1 minute 600 7500 35 NA 6 300/250 5.3 BVCEO(V) BVCBO(V) BVECO(V) VCEO (SAT) (µs) Max

triac 4N35

Abstract: moc3041 H11F1 hma121 h11ag3 H11D3-20 MOC3021 application moc3041 application note MOC3051 mct4
Contextual Info: Optoelectronics Products Phototransistor Output; DC Sensing Input CTR @ ≤10 mA IF % BVCEO (V) BVCBO (V) BVECO (V) tR/tF (µs) Min Max Min Min Min Typ VISO ACRMS (kV) 1 minute H11A817 50 600 35 NA 6 2.4/2.4 5.3 H11A817A 80 160 35 NA 6 2.4/2.4 5.3 H11A817B