RU4D Search Results

RU4DSG

Contextual Info: RU4DSG GLASS PASSIVATED FAST RECOVERY RECTIFIER VOLTAGE: 1500V CURRENT: 3.0A FEATURE DO - 201AD Molded case feature for auto insertion High Switching Capability Low leakage current High surge capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension

ru4ds

Contextual Info: SIYU R RU4DS 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 1300V Forward Current 3.0A 反向电压 1300V 正向电流 3.0 A 特征 Features DO-27 •低的反向漏电流 Low reverse leakage 1.0 25.4 MIN ·较强的正向浪涌承受能力

Contextual Info: SANKEN ELECTRIC CO., LTD. RU4DS 1. Scope The present specifications shall apply to a RU4DS. 2. Outline Type Silicon Diode Structure Resin Molded Applications Flammability:UL94-V0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings No.

RU4DS

Abstract: Forward Surge Current Ifsm Max 30A damper diodes
Contextual Info: SIYU R RU4DS 阻尼二极管 Damper Diodes 反向电压 1300V 正向电流 3.0 A Reverse voltage1300V Forward current 3.0A 特征 Features DO-27 •反向漏电流低 Low reverse leakage ·正向浪涌承受能力强 25.4 MIN 1.3±0.1 9.2±0.2 5.2±0.2 25.4

RS4FS

Abstract: R02Z RU4AM R02A RU1P RU4DS R02B R02C RM10B RM10Z
Contextual Info: - 70 - ü m RMIO RMIOA RM10B RM10 Z RM11A RM11B RM11C R02 R02A R02B R02C R02Z RS1A RS1B RS3FS RS4FS RU1P RU2 RU2AM RU2B RU2C RU2M RU2YX RU2Z RU3 RU3A RU3AM RU3B RU3C RU3M RU3YX RU4 RÜ4A RU4AM RCJ4B RÜ4C RU4D RU4DS RU4M RU4Y RU4YX RU4Z RU30 RU30A S1X20 £

damper diodes

Abstract: RU4D RU4d siyu
Contextual Info: SIYU R RU4D 阻尼二极管 Damper Diodes 反向电压 1500V 正向电流 3.0 A Reverse voltage1500V Forward current 3.0A 特征 Features DO-27 •反向漏电流低 Low reverse leakage ·正向浪涌承受能力强 25.4 MIN 1.3±0.1 High forward surge capability

ru4d-ru4ds

Abstract: ru4d
Contextual Info: RU4D-RU4DS High Efficiency Rectifiers VOLTAGE RANGE: 1300 V CURRENT: 1.5,2.5 A DO - 27 Features Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropand and s im ilar s olvents

RU4DS

Contextual Info: RU4DS DAMPER DIODES DO - 201AD PRV : 1300 Volts Io : 2.5 Amperes FEATURES : * * * * * * 1.00 25.4 MIN. 0.21 (5.33) 0.19 (4.83) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free

DO-201AD

Abstract: RU4DS
Contextual Info: RU4DS SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:1300V CURRENT: 3.0A FEATURE DO-201AD High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500

Contextual Info: SANKEN ELECTRIC CO., LTD. RU4D 1. Scope The present specifications shall apply to an RU4D. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 060223 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

Contextual Info: SIYU R RU4DS 塑封快恢复整流二极管 Plastic Fast Recover Rectifier 反向电压 1300V 正向电流 3.0 A Reverse Voltage 1300V Forward Current 3.0A 特征 Features DO-27 ・低的反向漏电流 Low reverse leakage 1.0 25.4 MIN ・较强的正向浪涌承受能力

Contextual Info: SIYU R RU4DS 阻尼二极管 Damper Diodes 反向电压 1300V 正向电流 3.0 A Reverse voltage1300V Forward current 3.0A 特征 Features DO-27 •低的反向漏电流 Low reverse leakage ·较强的正向浪涌承受能力 High forward surge capability 25.4

Contextual Info: SIYU R RU4D 阻尼二极管 Damper Diodes 反向电压 1500V 正向电流 3.0 A Reverse voltage1500V Forward current 3.0A 特征 Features DO-27 •低的反向漏电流 Low reverse leakage ·较强的正向浪涌承受能力 High forward surge capability 25.4

diode ru4d

Abstract: RU4DS RU4D
Contextual Info: BL GALAXY ELECTRICAL HIGH EFFICIENCY RECT IFIER RU4D Z - RU4DS(Z) VOLTAGE RANGE: 1300 V CURRENT: 1.5,2.5 A FEATURES DO - 27 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropand

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

tr212

Abstract: DO-15 DO15 PD212-PD220 PD0160 PD153 PD1530 TR-016 PD612-PD620 PD312-PD320
Contextual Info: 7.PDTR、PR 系列高压塑封二极管 1 PD0112-PD0160 0.1A 1200-6000V 1.2-5 DO-41 2 PD0312-PD0360 0.3A 1200-6000V 1.2-5 DO-15 3 PD0512-PD0560 0.5A 1200-6000V 1.2-5 DO-15 1A 1200-3000V 1.2-4

bv0T

Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­

D65806

Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications

RU4A

Abstract: RS4FS R02B R02Z RU1P RU4AM R02A ru4z R02C RM10B
Contextual Info: - 70 * ü m £ tt « Vr s m Vr r m V (V) m is & Vr 1 FM Tm * (V ) (A) (°C) I FS M Io .If* (A) (°C) (A) isi rc) (V) $ & Æ [S] ft î é I R in a x V Fmax I F (A) T(°C) * (tfA) V r (V) t£ m m TOC) RMI O RM IO A RM 10 B RM 10 Z RM 1 1 A •V y^r y •ï y>r y

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

J18M

Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­

RU4J

Abstract: RU4D GF600 RU4A
Contextual Info: RU4AGF THRU RU4MGF SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:50 TO 1000V CURRENT:2.0A FEATURE DO-201AD High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of