RM10B Search Results

RS4FS

Abstract: R02Z RU4AM R02A RU1P RU4DS R02B R02C RM10B RM10Z
Contextual Info: - 70 - ü m RMIO RMIOA RM10B RM10 Z RM11A RM11B RM11C R02 R02A R02B R02C R02Z RS1A RS1B RS3FS RS4FS RU1P RU2 RU2AM RU2B RU2C RU2M RU2YX RU2Z RU3 RU3A RU3AM RU3B RU3C RU3M RU3YX RU4 RÜ4A RU4AM RCJ4B RÜ4C RU4D RU4DS RU4M RU4Y RU4YX RU4Z RU30 RU30A S1X20 £

IC802

Abstract: c834 D858 C847 AN78M12LB C835 C-834 L-803 AN78M12 AVR 0856
Contextual Info: R841 DG COIL < N.D858 IC802 AN78M12LB I Vi JL11’7 V ♦ MA1068M 12v 16v 7 100 TVSTFD312M -ELECTRONIC D ragoljub Jankovic I micro@ ptt.yu | 031 /512 402 063/83 11 606 G ' D857 RM10B ERC12-08 ;: _: “ *C845 A 0,01, y + ,C846 i: 16v 10 rn

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

diode rm10A

Abstract: RM10A RO Series RM10 RM10B RM10Z 10zrm
Contextual Info: Rectifier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter Type No. RM 10Z RM 10 RM 10A RM 10B RM 2Z RM 2 RM 2A RM 2B RM 2C RO 2Z RO 2 RO 2A RO 2B RO 2C Tj (°C) IFSM (A) VRM (V) I F (AV) (A) 200 400 600 800 200 400 600 800

RBV-406M

Abstract: RM1Z 52 RBV-606 RBV-606H AM01A EM01A FMM-26S FMM-36S RBV-1306 RBV-1506S
Contextual Info: 49 0.4 0.6 600 1.0 Center-tap 50 1.2 2.1 50 5.5 51 4.05 Bridge 51 6.45 • External Dimensions 2.9±0.1 50.0±1.0 7.2±0.2 100 22 0.13 50 100 20 0.2 1.0 45 –40 to +150 0.97 1.0 10 50 100 17 0.3 1.0 50 –40 to +150 0.95 1.0 5 50 100 15 0.4 1.2 80 –40 to +150

RM1Z 12

Abstract: rectifier rbv-606 RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50

R02Z

Abstract: SG5T RM11C SANKEN
Contextual Info: iBBWiMiHSNieipeiBiie i IODES mm • RECTIFIER DIODES V rm lo IpSM Vf V) (A) (A) Max. @ lF (V) SFPM-52 200 SFPM-54 400 SFPM-62 200 SFPM-64 0.9 30 1.0 1.0 45 0.98 ¡R (A) Vrm lo Ifsm VF ,<V> (A) (A) Max. @ lF Type No. (H A ) Max. (V) RM4Y 100 200 RM 4Z 200

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

shindengen mr5060

Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A

RM10

Abstract: RM10A RM10B RM10Z
Contextual Info: RM10 - RM10Z SILICON RECTIFIER DIODES D2 PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * * 0.161 4.10 0.154 (3.90) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free

RM1Z

Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount V RM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM

SSC9512

Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Contextual Info: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China

RM10

Abstract: RM10A RM10B RM10Z RM-10
Contextual Info: RM10 - RM10Z SILICON RECTIFIER DIODES PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes D2 FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.161 (4.10) 0.154 (3.90)

Contextual Info: Rectifier Diodes Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter Type No. RM 10Z RM 10 RM 10A RM 10B RM 2Z RM 2 RM 2A RM 2B RM 2C RO 2Z RO 2 RO 2A RO 2B RO 2C IFSM （A） VRM （V） I F（ AV） （A） 200 400 600 800 200 400

RM1Z 12

Abstract: RBV-150C RBV-40C RM10 RM10A RM10B RM10Z
Contextual Info: Rectifier Diodes Package I F AV (A) Part Number IFSM (A) 50Hz ( ) is with Half-cycle Sinewave Single Shot Heatsink Axial 1000 Tstg (°C) IR (µA) VF (V) max IF (A) IR (H) (µA) VR = VRM max VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) 0.8 40 –40 to +150

RM10

Contextual Info: RM10 - RM10Z SILICON RECTIFIER DIODES D2 PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * * 0.161 4.10 0.154 (3.90) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free

RN4Z

Contextual Info: Characteristic Curves Rectifier Diodes SFPM-5 series 0.6 0.4 0.1 Ta = 150°C 100°C 60°C 25°C 0.01 t 1.6 P.C.B. Solder Land = 3.0 35µmCu 25 50 75 100 125 Ambient Temperature Ta °C 150 0.001 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 30 25 20ms 20

RM1Z 12

Abstract: RBV-408 RBV-608 RM10 RM10A RM10B RM10Z RM1Z 05
Contextual Info: Rectifier Diodes is with Half-cycle Sinewave Heatsink Single Shot VR = VRM max Rth (j- ) Rth (j-c) (°C/W) Mass (g) Fig. No. 0.8 40 –40 to +150 1.2 1.0 5 50 100 15 0.4 49 1.0 35 –40 to +150 0.97 1.0 20 100 100 17 0.3 48 EM 2B 1.2 80 –40 to +150 0.92

RM1Z 12

Abstract: rm 4z RM1 A 45 RBV-602 AM01Z EM01Z FMM-22S FMM-32S FMM-32 RBV-4102
Contextual Info: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150

RM1Z 12

Abstract: RBV-404 bridge rectifier RM1C 25/50 A AM01 EM01 FMM-24S FMM-34S RBV-404 RBV-604 RM10
Contextual Info: Rectifier Diodes Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot Ta (°C) 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 SFPM-74 1.0 50 –40 to +150 1.0 1.0 10 50 150 20 0.072 AM01 1.0 35

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

RM10Z

Abstract: RM10 RM10A RM10B
Contextual Info: RM10 - RM10Z SILICON RECTIFIER DIODES D2 PRV : 200 - 800 Volts Io : 1.2 - 1.5 Amperes FEATURES : * * * * * 0.161 4.10 0.154 (3.90) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 (25.4)

BT136-600E equivalent

Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Contextual Info: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.