MJE2370
Abstract: transistor mje29 MJE30 2N5190 MOTOROLA MJE31 mje29 MJE4918 Motorola transistors 2N5192 MJE32 2N6122 transistor
Contextual Info: MOTOROLA SC -CDIODES/OPTO]- 6367255 MOTOROLA "Ï4 SC DE | b 3 t . 7 5 S S DIODES/OPTO 34C O D a ? 1^ 37933 SILICON POWER TRANSISTOR DICE (continued) 2C5192 DIE NO. — NPN LINE SOURCE — PL500.E248 NPN 2C5195 DIE NO. — PNP LINE SOURCE — PL500.E249 /
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pl5002c51922c51952n5190+152n51912n51922n58692ns8702n6121mje2370transistor mje29mje302n5190 motorolamje31mje29mje4918motorola transistors 2n5192mje322n6122 transistor
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bv0T
Abstract: bv0e NEC L213 FO09B2 f57a EB S913 l914 F204A L462 D1H01
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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pd6782xpd6783xa11957xj2v0um00bv0t+9bv0enec l213fo09b2f57aeb s913l914f204al462d1h01
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se617
Abstract: SE641 transistor f423 sd667 transistor hh 004 transistor f422 bv0T F423 n010x L442
Contextual Info: Block Library CMOS-9HD Family, EA-9HD Family CMOS Gate Array, CMOS Embedded Array Ver.6.0 Document No. Date Published A13052EJ6V0BL00 6th edition December 2000 NS CP(K) NEC Corporation 1997 Printed in Japan [MEMO] Block Library A13052EJ6V0BL Summary of Contents
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a13052ej6v0bl00a13052ej6v0blse617se641+8transistor f423sd667transistor hh 004transistor f422bv0tf423n010xl442
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qe 200
Abstract: C1002
Contextual Info: International IOR Rectifier Provisional Data Sheet PD-9.1190 IRGNIN150K06 Low conduction loss IGBT "CHOPPER" IGBT INT-A-PAK VCE = 600V lc = 100 A •Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated
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irgnin150k06c-1002qe 200c1002 |
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
Contextual Info: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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a12158ej5v0dm00semiconductor2/9044marking code n-channel mos field effect transistorupd65837+8upd65869x17512upd65839rf transistors ceramic marking f25marking code f302 535d65841upd65851x46358
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