transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-micronpd658xxtransistor f422transistor f423+8f422 transistortransistor f421bv09f423fet 13187rj4bl442bvoe
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transistor f422
Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform
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ipd658xxtransistor f422transistor f423f422 transistor+3transistor f421nec product naming rulebk-dk
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bv0T
Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per
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b4e75s5qq3t701npd658xxbv0t+1658x
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D65806
Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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65-micronxpd65800d658069215k1 |
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J18M
Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform
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j18mitt 2222marking code f302l-423+6d 65632single-port rammarking l442em 288nec upd 65658ru4d
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RJ49
Abstract: "RJ-49" P5 94v0
Contextual Info: 8 1. MECHANICAL DIMENSIONS : 116.26 [4 .5 7 7 ] MM AA 0Z0S9H0Q8ZHd B 3idinni/\ix B RECOMMENDED PANEL CUTOUT DIMENSION 115.5 Max. C4.S47 Max.] 41.15 [1.6203 NOTES' 1. MATERIALHDUSING-PBT POLYESTER U L-9 4V -0 MIXED GLASS FIBER. STANDARD COLOR-BLACK C0NTACTS-0.35m THICK PHOS-BRDNZE PLATED
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ul-94v-0sus30168jsubpartkpjh-28d-0-h65-070+58p40cxpjh-28d-0-h65-070rj49rj-49p5 94v0
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transistor f422
Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high
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xpd658xxtransistor f422transistor f423bkdf+7f422 transistorb00jf422f423fet 13187rj4bru4f
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ru4f
Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
Contextual Info: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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ieu-7922ip-8090ru4ff422+8f423rj8bsingle-port ramtt 2246ru89be09l737f425
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R1019
Abstract: R472 RJ19 C1186 C1162 c877 R947 C1239 c1165 R1007
Contextual Info: R431 Q47 R771 T P3 2 R772 D32 D40 D79 Q22 C313 C310 R372 D25 C724 F7 U38 U27 U11 C199 C407 R328 R273 C203 Q61 Q107 R657 Q83 Q68 R652 L5 C189 C108 C104 C463 C944 C910 C342 C908 C103 C100 C455 C466 U4 C87 C31 C591 C699 R82 U15 C109 RT13 Q4 C617 C22 C411 C9 Q59
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c1293c1088c1112c1113+12r1002tp900r1019r472rj19c1186c1162c877r947c1239c1165r1007
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diode ru4d
Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
Contextual Info: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r
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apd658xxdiode ru4dru4fbvde+7rj4b364-pinitt 2222 arj8bdiode ru4d compatiblerj-49fwb1
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bv0T
Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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50-micronpd658xxbv0tf423+8fv06rj4b83yl-9164bsingle-port ramb00jtransistor f423bewfdiode ru4d
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D65842
Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform ance, sub-micron gate arrays, targeted for applications
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jpd65800d65842diode ru4d136-pin+3cmos7bv09180 nm cmos standard cell library synopsys
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D65806
Contextual Info: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s
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65-micrond65806 |
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65630
Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
Contextual Info: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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ieu-7922ip-809065630rk4b+883nr-7843bru4frj49rj4bnec upd 65658transistor f423f423l442
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
Contextual Info: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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a12158ej5v0dm00semiconductor2/9044marking code n-channel mos field effect transistorupd65837+8upd65869x17512upd65839rf transistors ceramic marking f25marking code f302 535d65841upd65851x46358
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