RK4B31
Abstract: 4B31 rectifier diode 4 amp 600 volt RK-4B31 "Power Tube" tube ef5
Contextual Info: RAYTHEON i TECHNICAL INFORMATION DIODE R E C T IFIE R TYPE .J lL RK-4B31 The RK4B31 is a h e a te r-c a th o d e , high v a c ju m power tu b e designed fo r use as a c lip p e r diod e o r re c tifie r« I t is m e c h a n ic a lly ruggard and in a d d itio n u se s a hard g la s s nonex envelope.
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rk-4b31rk4b31130vdc4b31+3rectifier diode 4 amp 600 voltpower tubetube ef5
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transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-micronpd658xxtransistor f422transistor f423+8f422 transistortransistor f421bv09f423fet 13187rj4bl442bvoe
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transistor f422
Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform
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ipd658xxtransistor f422transistor f423f422 transistor+3transistor f421nec product naming rulebk-dk
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bv0T
Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per
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b4e75s5qq3t701npd658xxbv0t+1658x
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D65806
Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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65-micronxpd65800d658069215k1 |
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J18M
Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform
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j18mitt 2222marking code f302l-423+6d 65632single-port rammarking l442em 288nec upd 65658ru4d
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transistor f422
Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high
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xpd658xxtransistor f422transistor f423bkdf+7f422 transistorb00jf422f423fet 13187rj4bru4f
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ru4f
Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
Contextual Info: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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ieu-7922ip-8090ru4ff422+8f423rj8bsingle-port ramtt 2246ru89be09l737f425
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diode ru4d
Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
Contextual Info: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r
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apd658xxdiode ru4dru4fbvde+7rj4b364-pinitt 2222 arj8bdiode ru4d compatiblerj-49fwb1
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bv0T
Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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50-micronpd658xxbv0tf423+8fv06rj4b83yl-9164bsingle-port ramb00jtransistor f423bewfdiode ru4d
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D65842
Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform ance, sub-micron gate arrays, targeted for applications
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jpd65800d65842diode ru4d136-pin+3cmos7bv09180 nm cmos standard cell library synopsys
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D65806
Contextual Info: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s
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65-micrond65806 |
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65630
Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
Contextual Info: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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ieu-7922ip-809065630rk4b+883nr-7843bru4frj49rj4bnec upd 65658transistor f423f423l442
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
Contextual Info: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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a12158ej5v0dm00semiconductor2/9044marking code n-channel mos field effect transistorupd65837+8upd65869x17512upd65839rf transistors ceramic marking f25marking code f302 535d65841upd65851x46358
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