c 5802 transistor
Abstract: 2SD1961 TO-92U D45 TRANSISTOR ic 6802 l04c 2SD1962M 2SD2098 TRANSISTOR c 5802 2SD2097
Contextual Info: h ~7> V 7s $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961 /2SD1962M 2SD2097/2SD2098 NPN V U =l > h 7 > y X $ Epitaxial Planar NPN Silicon Transistor • rliÈ U /D im en sio n s Unit: mm 1) VcE(sat) VcE(sat)=1V (Max.) Ic / I b = 4 A / 0.1 A tlT ^ - S o
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2sd1961/2sd1962m/2sd2097/2sd2098/2sd1962m2sd2097/2sd2098+11o-92u65-llt-c 5802 transistorto-92ud45 transistoric 6802l04c2sd1962m2sd2098transistor c 58022sd2097
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2SD1959
Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947
Contextual Info: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983
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2sd19402sd19412sd19432sd1944+92sd19462sd19472sd19482sd19ce2sd1964o-1262sd19592sb13012sd1951
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1271A
Abstract: nec 1251 2SB2198 2SD1227M 2sd1070 2SC4008 2SD2394 2SD1593 2sd1855 2sd1944
Contextual Info: - S « Type No. tt 2SD 1243 » 2SD 1243A T 2SD 1245 fé fé fé 2S0 1246 H W 2SD 1247 y =- 2SD 1248 . 2SD 1244 « Manuf. H n SANYO T 2SD1064 T 2SD1064 Ä $ TOSHIBA a NEC B ÌL HITACHI □ MITSUBISHI h, ROHM 2SD1962M 2SC32S6 2SD1196 i 2SD1227M 2SD965 2SD1513
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2sd12432sd1243a2sd12442sd1245+162sd12462sd12472sd12482sd1248k2sd12512sd12521271anec 12512sb21982sd1227m2sd10702sc40082sd23942sd15932sd18552sd1944
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2SD1961
Abstract: C45A
Contextual Info: h 7 > y X $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961/2SD1962M 2SD2097/2SD2098 NPN '> • ;= ! > Epitaxial Planar NPN Silicon Transistor • W f2\ti±E 3/D im ensio ns Unit: mm M,a n » oc /mv> • • iffiftlilfcJElte/Absolute Maximum Ratings (Ta=25°C)
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2sd1961/2sd1962m/2sd2097/2sd20982sd1961/2sd1962m2sd2097/2sd2098+52sd1962m2sd20972sd2098/2sd1962m/2sd209c45a
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2SD1961
Abstract: transistor 2097
Contextual Info: 2SD1961 /2S D 1962M /2S D 2097 h z 7 > y X ^ r /"Transistors 2SD1961 /2SD1962M /2SD2097 Epitaxial Planar NPN Silicon Transistor • 1 W fé ^ Ü E I/ D im e n s io n s Unit: mm & & 1) V cE (sa t)tfr '> '° V c E (s a t)= 1 V (M ax.) (I c / I b = 4 A / 0 . 1 A )
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2sd19611962m/2sd1962m/2sd2097+2/2sd1962m/2sd2097transistor 2097
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T272i
Abstract: 2SC 5802 2SD1961 R2713 c 5802 transistor L2000 mrrr 2SD1962M 2SD2097 2SD2098
Contextual Info: ROHM CO L T » h7 40E /Transistors » Bi 7 Û S Ô ci ci cî OOObDST ö «RHM 2SD1961/2SD1962M/2SD2097/2SD2098 2 S D 1 S 6 1 /2 S D 1 962M S S 2 S D 2 C 9 7 /2 S ÎD 2 C 9 3 Vt>4V:'A'vJ|*J' NPN y y a > Epitaxial Planar NPN Silicon Transistor 1W f i xt'iiEl/'Dlm ensions Unît; mm
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2sd1s812sd2c97/2sd20932sd1961/2sd1962m/2sd2097/2sd2098+13r-27-13o-92l/ty/r-i--t-27-13o-92lt272i2sc 5802r2713c 5802 transistorl2000mrrr2sd1962m2sd20972sd2098
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NEC k 3654
Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6
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2sc36432sc35362sc36442sc3535+92sc37372sc3738nec k 3654dtc124eshitachi 3640dtc114es2sc 3674 s2sc3242adtc144es
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2SB909M
Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p
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2sa937amln2sc2021mln2sa937am2sa1547a+152sc2021m2sc40102sc4776m2sc47782sa874m2sa15482sb909m2sc50832sd23152sb12422sb146025018632sd1225m2sc47762sb1130
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2SB1485
Abstract: 2SB1460 2SB1307M 2sb909m 2SB1042M 2SD1866 2SB1242 2sd1225m
Contextual Info: Ei 1 ransistoi s ★★ PC board collector s copper foil area 1cm? or over; PC board thickness, 1.7mm ATR, ATV Types * Under Development Type ATR ATV — 2SA937MLN 2SC2021MLN — 2SA937M 2SA1547 2SC2021M 2SC4010 n W 2SC 4776M E 372SC4778 2SA1548 2SA874M
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2sb14852sb14602sb1307m2sb909m+42sb1042m2sd18662sb12422sd1225m
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2SC1740 transistor
Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN
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2sc2021ln2sb8212sb12762sc2021mln+16o-92lo-92ls2sb737v2sd7862sa11372sc17402sc1740 transistora1757b1130am2sd2061f2sd14662sc5083b1236amos-fet darlington2sc4721transistor 2sa1819
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2SB1242
Abstract: 2SB1485
Contextual Info: T r a n s is to r s ATR • ATV Approximately the same size as the TO-92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package ATR Application VCEO V VcES * * V CER ATV Part No. _ 2SA937AMLN -5 0 40 50
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2sa937amln2sc2021mln2sa937am2sc2021m+82sc4776m2sa874m2sb909m2sb910m2sb911m2sb1042m2sb12422sb1485
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2sc4496a
Abstract: 2SD3181 2Sc3246 2sc3928 2SC3209 4468 2SC2644 2SD1404 2SD773 2sc3514
Contextual Info: - SI « T y p e No. tt « Manuf. Z i# SANYO it 2? TOSHIBA ÌL 2SC4403 ÎL 2SC4854 2SC2644 2 SC 4468 ^ V- v i r v 2SD1047 2SC3182N 2SC 4469 * ± S 1 * 2SC 4470 * 2SC 4472 n —U — :í¿ 2SC 4473 _ 2SC 4474 3 # 2SC 4477 h m NEC HITACHI 2SC4478 ± Ä F U JITSU
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2sc44032sc41872sc48542sc2644+152sd10472sc3182n2sc29892sc42782sc33072sc35082sc4496a2sd31812sc32462sc39282sc320944682sd14042sd7732sc3514
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2SB1242
Abstract: 2SB1326 2SB1485 2sc5083 2SD1660M 2SA1776 2sa192 2SB1240 2SD2315 2SA1548
Contextual Info: Transistors ATR • ATV Approximately the same size as the TO -92 w ith up to 1 W power cap ab ility. Taped type for automated placement or bulk packaging available. Package , Application VcEO V ATV ATR ^VcES %^VcER Part No. - 2SA937AMLN -5 0 40 50 -5 0
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2sa937amln2sc2021mln2sa937am2sa1547a+152sc2021m2sc40102sc4776m2sc47782sa874m2sa15482sb12422sb13262sb14852sc50832sd1660m2sa17762sa1922sb12402sd2315
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2SD2159
Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise
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2sa825s2sa830s2sa854s2sa933as+152sa933asln2sa1198s2sa1199s2sa1515s2sa1585s2sc1645s2sd21592sd24212sb14852sb13332sd20612sc2021qrs2sd21722sd2388darlington rf
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RCM2008R
Abstract: 1SS299 bu24204 RCM2027 BA3422S BA843 BA6490FS da119 k2 BA6404 BA857
Contextual Info: 87 87 87 87 87 88 88 88 88 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 87 90 90 90 87 87 87 87 87 87 86 86 86 86 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 88 86 86 86 86 86 87 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 86 87 86 86 86 88 88
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2n39062n39462n39472n4059+16n40602n40612n40622n41232n41242n4125rcm2008r1ss299bu24204rcm2027ba3422sba843ba6490fsda119 k2ba6404ba857
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2SA1547
Abstract: 2SA1548 2SA874M 2SA937M 2SA937MLN 2SC2021MLN 2SC202M 2SC4010 2SC4776M 2SC4778
Contextual Info: Transisto rs <Pin Inserting Types> ROHM CO LTD SbE D • 7626^ 0007034 044 ■ RHM ■ATR • ATV -T -2-7 -Z l Almost the same size as TO-92 but 1W Pc package type. Taped type for automated placement; or bulk specification. Package Application ATR Vc e o V
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g7d342sa937mln2sc2021mln2sa937m+72sa15472sc202m2sc40102sc4776m2sc47782sa874m2sa1548
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2SD1966
Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5
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2sa7852sa7902sa790m2sa806+112sa8212sa8252sa825s2sa832sa830s2sa8542sd19662sd1255m2sb maintenanceimb62sc2808
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