2SA1547 Search Results

2SB1485

Abstract: 2SB1460 2SB1307M 2sb909m 2SB1042M 2SD1866 2SB1242 2sd1225m
Contextual Info: Ei 1 ransistoi s ★★ PC board collector s copper foil area 1cm? or over; PC board thickness, 1.7mm ATR, ATV Types * Under Development Type ATR ATV — 2SA937MLN 2SC2021MLN — 2SA937M 2SA1547 2SC2021M 2SC4010 n W 2SC 4776M E 372SC4778 2SA1548 2SA874M

2sa154

Abstract: 251C 2SA1547 2SA937M 2SC2021M 2SC401
Contextual Info: ROHM CO L T D T a s a ^ MGE D . 4 HIRHM 2SA937M/2SA1547 ^ 7, $ / T r a n s is t o r s N7 Q0 GS M27 ' 7 ^ 2 7 - 0 9 2 S A 1 5 4 7 ~ ^ / N f ^ ii,fiffl/General Smal1 S|9na| AmpEpitaxial Planar PNP Silicon Transistors •¿l-Jfi'tf& SI/D lm e n sio n s U n it:m

2SA937M Q

Abstract: 2SA1547 7270 ic 2sa154 2SA937M 2SC2021M 2SC4010 937M
Contextual Info: ROHN CO LTD 4GE D . 7fiSûcm I//Transistors 2 2 00GS427 4 BIRHM 2SA937M/2SA1547 9 3 7 M x tr $ * > t /u y - j-m p n p v y -3 > h 7 7 - 2 7 - 0 ^ > v ;* * “ ÂB'JHl-flilÉÎfiÆ /General Small Signal Amp. Epitaxial Planar P N P Silicon Transistors • Wfivfisfelij/’Dlmensions Unit : mm

Contextual Info: 2SA937M/2SA1547 S "7 > v X $ /Transistors I t ^ ^ r y 7 ^ U - 1 - f ô P N P v 'J =] > h 7 > v * £ /G eneral Small Signal Amp. 2 S A 9 3 7 M 2 S A 1 5 4 7 Epitaxial Planar PNP Silicon Transistors • jiE g/D im ensions Unit : mm h -y S V * £ le M ax=—100mA, Pc Max = 300mW

Contextual Info: 2SA1547A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SA1547AP Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC4010

Abstract: 937m 547a A 937M
Contextual Info: 2SA937AM/2SA1547A h 7 > y ^ 5I / T ransistors 2S AQ37 S 2SA1 547A Epitaxial Planar PNP Silicon Transistors - « ' M I ^ f i f f l / G e n e r a l Small Signal Amp. it-Jß^tiiEI/D iniension s Unit : mm • «Ä 1) i m m 7 T ' $ > Z o 2SA937AM 2 SA 1 547A

Contextual Info: 2SA1547 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA1530

Abstract: 2sa1562 2SA1567 2sc3928 2SC4000 2SC4001 2SC4016 2SC4040 2SA1531 2SA1531A
Contextual Info: - 40 - < T a = 2 5 U * T O T c = 2 5 ‘i3 Sü 2SA1530 2SA1531 2SA1531A 2SA1532 2SA1533 2SA1534 2SA1534A 2SA1535 2SA1535A 2SA1536 2SAÌ537 2SA1538 2SA1539 2SA1540 2SA1541 2SA1544 2SA1545 2SA1546 2SA1547 2SA1548 2SA1549 2SA1550 2SA1552 2SA1553 2SA1554 2SA1555

Contextual Info: 2SA1547AR Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB909M

Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o

2SB1242

Abstract: 2SB1485
Contextual Info: T r a n s is to r s ATR • ATV Approximately the same size as the TO-92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package ATR Application VCEO V VcES * * V CER ATV Part No. _ 2SA937AMLN -5 0 40 50

2SB1242

Abstract: 2SB1326 2SB1485 2sc5083 2SD1660M 2SA1776 2sa192 2SB1240 2SD2315 2SA1548
Contextual Info: Transistors ATR • ATV Approximately the same size as the TO -92 w ith up to 1 W power cap ab ility. Taped type for automated placement or bulk packaging available. Package , Application VcEO V ATV ATR ^VcES %^VcER Part No. - 2SA937AMLN -5 0 40 50 -5 0

tc 144e

Abstract: ry 130-2 TZ 1148 413 a933s C2673 TA78 739 TZ 1148 mc 1302 L 930DT
Contextual Info: M H /T y p e Number List I' -y > v X £ /T ransistors 2S A785. 75 2S A 790. 78 2 S A 7 9 0 M .81

2021M

Contextual Info: h 7 > y ^ £ /Transistors 2SC 2021M 2SC 4010 2SC2021M/2SC4010 NPN y ÿ =1 > h Epitaxial Planar NPN Silicon Transistors ~ A S / G e n e r a l Small Signal Amp. * W firfjiE il/D im e n s io n s Unit : mm 1) VCE(sat)*''i6'-'o VcE(sat)=0.04V (Typ.) (lc /lB = 10mA/1mA)

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise

2SC4029

Abstract: 2sc4024 2SC4040 2sa155 2SC4007 2SC4008 2SC4010 2SC4011 2SC4012 2SC4013
Contextual Info: - 184 - m % ft Ta=25T>, *EPÍáTc=25'C M & it £ VcBO VcEQ IcC DC) Pc Pc* (V) 100 100 50 40 40 25 30 300 40 40 900 100 500 180 1400 230 1700 2000 40 210 40 50 40 40 30 120 50 50 50 120 600 BOO 600 600 600 600 (V) (A) (W) (ff) 40 30 (max) 2SC4007 2SC4008

2SC4010

Abstract: 2SC401 2SA1547 2SC2021 2SA937M 2SC2021M
Contextual Info: ROHM CO LTD * 70 50 ^= aaosb? s m r h m 2SC2021M/2SC4010 40E D > V X £ / T ransistors - ' 7^2 7 - 0 9 2SC2021 2SC4010 X t f $ d fv y ;U7° Is—r w NPN y V H > h ÿ > y X £ —$x/M f - § - i! |fïffl/G eneral Small Signal Amp. Epitaxial Planar NPN Silicon Transistors

transistor 2N3563

Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .